Gas barrier film and method for producing the same

Patent metadata

Field	Value
Publication number	US-2016108282-A1
Application number	US-201414893824-A
Country	US
Kind code	A1
Filing date	May 26, 2014
Priority date	May 28, 2013
Publication date	Apr 21, 2016
Grant date	—

Abstract

[Object] To provide a means capable of further improving gas barrier capabilities and durability of gas barrier capabilities for a gas barrier film.
[Solving Means] A gas barrier film having: a substrate; a first barrier layer that is arranged on at least one surface of the substrate, has a film density of 1.5 to 2.1 g/cm 3 , and includes an inorganic compound; and a second barrier layer that is formed on the surface of the substrate on the same side where the first barrier layer is formed and includes silicon atoms, oxygen atoms, and at least one added element selected from the group consisting of elements of Groups 2-14 of the long form of the periodic table (excluding silicon and carbon), the abundance ratio of oxygen atoms to silicon atoms (O/Si) being 1.4 to 2.2, and the abundance ratio of nitrogen atoms to silicon atoms (N/Si) being 0 to 0.4.

First claim

1 . A gas barrier film comprising:
a substrate; a first barrier layer that is arranged on at least one surface of the substrate, has a film density of 1.5 to 2.1 g/cm 3 , and includes an inorganic compound; and a second barrier layer that is formed on the surface of the substrate on the same side where the first barrier layer is formed and includes silicon atoms, oxygen atoms, and at least one added element selected from the group consisting of elements of Groups 2-14 of the long form of the periodic table (excluding silicon and carbon), the abundance ratio of oxygen atoms to silicon atoms (O/Si) being 1.4 to 2.2, and the abundance ratio of nitrogen atoms to silicon atoms (N/Si) being 0 to 0.4.

2 . The gas barrier film according to claim 1 ,
wherein the added element is at least one type selected from the group consisting of boron (B), magnesium (Mg), aluminum (Al), calcium (Ca), titanium (Ti), zinc (Zn), gallium (Ga), germanium (Ge), zirconium (Zr), and indium (In).

3 . The gas barrier film according to claim 2 ,
wherein the added element is at least one type selected from the group consisting of boron (B), aluminum (Al), gallium (Ga), and indium (In).

4 . The gas barrier film according to claim 3 ,
wherein the added element is aluminum (Al).

5 . The gas barrier film according to claim 1 , the gas barrier film having a constitution of including the substrate, the first barrier layer, and the second barrier layer in order.

6 . The gas barrier film according to claim 1 , the gas barrier film having three or more layers of the first barrier layers and the second barrier layers in total, wherein the barrier layer that is the closest layer to the substrate is the first barrier layer and the barrier layer that is the furthermost layer from the substrate is the second barrier layer.

7 . A method for producing the gas barrier film according to claim 1 , the method comprising forming the first barrier layer by applying a first coating solution including an inorganic compound or a precursor thereof on at least one surface of the substrate to form a first coating film, and performing the conversion treatment of the first coating film.

8 . The method for producing the gas barrier film according to claim 7 ,
wherein the forming of the first barrier layer includes forming the first barrier layer by a sol-gel method using a silicon compound, or by the conversion of polysilazane or polysiloxane.

9 . The method for producing the gas barrier film according to claim 8 ,
wherein the forming of the first barrier layer includes forming the first barrier layer by the conversion of polysilazane.

10 . The method for producing the gas barrier film according to claim 7 , the method further comprising forming the second barrier layer by applying a coating solution including polysilazane and an added compound including at least one added element selected from the group consisting of elements of Groups 2-14 of the long form of the periodic table (excluding silicon and carbon) on the surface of the substrate on the same side where the first barrier layer is formed to form a second coating film, and performing the conversion treatment of the second coating film.

11 . The method for producing the gas barrier film according to claim 10 ,
wherein the conversion treatment to the second coating film is a vacuum UV ray irradiation treatment.

12 . An electronic device having the gas barrier film according to claim 1 .

Assignees

• Konica Minolta Inc

Inventors

• Ito Hirohide

Classifications

• C09D183/14 Primary

  in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms (C09D183/10 takes precedence) · CPC title

• C09D183/06

  containing silicon bound to oxygen-containing groups (C09D183/12 takes precedence) · CPC title

• C23C16/48

  by irradiation, e.g. photolysis, radiolysis, particle radiation · CPC title

• C23C16/22

  characterised by the deposition of inorganic material, other than metallic material · CPC title

• C08J7/048 Primary

  Forming gas barrier coatings · CPC title