Method of improving getter efficiency by increasing superficial area

Patent metadata

Field	Value
Publication number	US-2016101976-A1
Application number	US-201514967663-A
Country	US
Kind code	A1
Filing date	Dec 14, 2015
Priority date	Oct 15, 2013
Publication date	Apr 14, 2016
Grant date	—

Abstract

In some embodiments, the present disclosure relates to a MEMs (micro-electromechanical system) package device having a getter layer. The MEMs package includes a first substrate having a cavity located within an upper surface of the first substrate. The cavity has roughened interior surfaces. A getter layer is arranged onto the roughened interior surfaces of the cavity. A bonding layer is arranged on the upper surface of the first substrate on opposing sides of the cavity, and a second substrate bonded to the first substrate by the bonding layer. The second substrate is arranged over the cavity. The roughened interior surfaces of the cavity enables more effective absorption of residual gases, thereby increasing the efficiency of a gettering process.

First claim

What is claimed is:

1 . A MEMs (microelectromechanical system) package, comprising:
a first substrate having a cavity located within an upper surface of the first substrate, wherein the cavity has roughened interior surfaces; a getter layer arranged onto the roughened interior surfaces of the cavity; a bonding layer arranged on the upper surface of the first substrate on opposing sides of the cavity; and a second substrate bonded to the first substrate by the bonding layer, wherein the second substrate is arranged over the cavity.

2 . The MEMs package of claim 1 , further comprising:
a layer of corrugated material arranged onto substantially smooth interior surfaces of the substrate lining the cavity, wherein the layer of corrugated material has an uneven thickness that forms the roughened interior surfaces of the cavity.

3 . The MEMs package of claim 1 , wherein the getter layer covers roughened interior surfaces of the first substrate.

4 . The MEMs package of claim 3 , wherein the getter layer comprises a metal arranged over the roughened interior surfaces of the first substrate.

5 . The MEMs package of claim 1 , wherein the second substrate comprises one or more MEMs (microelectromechanical system) devices that are in contact with the cavity.

6 . The MEMs package of claim 1 , wherein the getter layer comprises a metal.

7 . The MEMs package of claim 1 , wherein the bonding layer has a sidewall that is exposed to the cavity.

8 . The MEMs package of claim 1 , wherein the bonding layer has a sidewall that is laterally set back from a sidewall of the getter layer.

9 . The MEMs package of claim 1 , wherein the second substrate is separated from the getter layer by a space.

10 . The MEMs package of claim 1 , wherein the getter layer has a first side facing the roughened interior surfaces and a second side facing away from the roughened interior surfaces and having a roughness that is smaller than a roughness of the roughened interior surfaces.

11 . A MEMs (microelectromechanical system) package, comprising:
a substrate comprising a cavity located within an upper surface of the substrate, wherein the substrate has substantially smooth interior surfaces lining the cavity; a layer of corrugated material arranged onto the substantially smooth interior surfaces of the cavity, wherein the layer of corrugated material forms roughened interior surfaces within the cavity; and a getter layer arranged onto the roughened interior surfaces within the cavity.

12 . The MEMs package of claim 11 , further comprising:
a bonding layer arranged on the upper surface of the substrate on opposing sides of the cavity; and a second substrate bonded to the substrate by the bonding layer, wherein the second substrate is arranged over the cavity.

13 . The MEMs package of claim 12 , wherein the bonding layer comprises a metal.

14 . The MEMs package of claim 12 , further comprising:
a device substrate bonded to the substrate by way of the bonding layer and comprising one or more MEMs (microelectromechanical system) devices contacting the cavity.

15 . The MEMs package of claim 11 , wherein the layer of corrugated material comprises a layer of HSG (hemispherical grained silicon) deposited by way of a chemical vapor deposition process.

16 . The MEMs package of claim 11 , wherein the layer of corrugated material comprises a spin-on-glass.

17 . A semiconductor device, comprising:
a semiconductor substrate comprising a cavity located within an upper surface of the semiconductor substrate, wherein the semiconductor substrate has roughened interior surfaces lining the cavity; a getter layer covering the roughened interior surfaces of the semiconductor substrate; and wherein the getter layer comprises a material that is different than the semiconductor substrate and that contacts the roughened interior surfaces of the semiconductor substrate along a non-planar interface.

18 . The semiconductor device of claim 17 , wherein the getter layer comprises a metal arranged over the roughened interior surfaces of the semiconductor substrate.

19 . The semiconductor device of claim 17 , further comprising:
a bonding layer arranged on the upper surface of the semiconductor substrate on opposing sides of the cavity; and a second semiconductor substrate bonded to the semiconductor substrate by the bonding layer, wherein the second semiconductor substrate is arranged over the cavity.

20 . The semiconductor device of claim 19 , further comprising:
a device substrate bonded to the semiconductor substrate by way of the bonding layer and comprising one or more MEMs (microelectromechanical system) devices contacting the cavity.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Hsieh Yuan-Chih
• Chu Li-Cheng
• Lin Hung-Hua
• Chan Chih-Jen
• Chao Lan-Lin

Classifications

• H10P95/405

  using cavities formed by hydrogen or noble gas ion implantation · CPC title

• H10W76/48

  Fillings including materials for absorbing or reacting with moisture or other undesired substances · CPC title

• B81C2203/0118

  Bonding a wafer on the substrate, i.e. where the cap consists of another wafer · CPC title

• B81B2201/0242

  Gyroscopes · CPC title

• B81C1/00285 Primary

  using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters · CPC title