Modification processing device, modification monitoring device and modification processing method

Patent metadata

Field	Value
Publication number	US-2016093539-A1
Application number	US-201514866835-A
Country	US
Kind code	A1
Filing date	Sep 25, 2015
Priority date	Sep 26, 2014
Publication date	Mar 31, 2016
Grant date	—

Abstract

There is provided a technique for easily inspecting the modification state of a film in a semiconductor substrate. A modification processing device modifies a film by irradiating a semiconductor substrate with pulsed light emitted from a light irradiation part. The modification processing device includes an electromagnetic wave detection part for detecting an electromagnetic wave pulse including a millimeter wave or a terahertz wave radiated from the semiconductor substrate in response to the irradiation with the pulsed light. The modification processing device further includes a modification determination part for determining the modification state, based on the intensity of the electromagnetic wave pulse.

First claim

What is claimed is:

1 . A modification processing device for modifying a film by irradiating a semiconductor substrate with light, comprising:
a light irradiation part for irradiating a semiconductor substrate with light; and an electromagnetic wave detection part for detecting the intensity of an electromagnetic wave including a millimeter wave or a terahertz wave radiated from said semiconductor substrate in response to the irradiation with light.

2 . The modification processing device according to claim 1 , further comprising
a modification determination part for determining the modification state of a film of said semiconductor substrate, based on the intensity of said electromagnetic wave detected by said electromagnetic wave detection part.

3 . The modification processing device according to claim 2 , further comprising
a PL light detection part for detecting photoluminescent light radiated from a surface of said semiconductor substrate by the irradiation with light from said light irradiation part, wherein said modification determination part determines the modification of said semiconductor substrate, based on the intensity of the electromagnetic wave detected by said electromagnetic wave detection part and said photoluminescent light detected by said PL light detection part.

4 . The modification processing device according to claim 1 , further comprising
an irradiation control part for controlling the irradiation with light for modifying the film of said semiconductor substrate, based on a result of determination of said modification determination part.

5 . The modification processing device according to claim 1 , wherein
the light emitted from said light irradiation part is pulsed light which modifies the film of said semiconductor substrate and which generates an electromagnetic wave in said semiconductor substrate.

6 . A modification monitoring device for monitoring the modification state of a film in a semiconductor substrate, comprising
an electromagnetic wave detection part for detecting an electromagnetic wave including a millimeter wave or a terahertz wave radiated from said semiconductor substrate in response to a irradiation with light.

7 . A modification processing method of modifying a film by irradiating a semiconductor substrate with light, comprising the steps of:
(a) irradiating a semiconductor substrate with light for modifying a film; and (b) detecting the intensity of an electromagnetic wave including a millimeter wave or a terahertz wave radiated from said semiconductor substrate in response to the irradiation with light in said step (a).

Assignees

• Screen Holdings Co Ltd
• Univ Osaka

Inventors

• Nakanishi Hidetoshi
• Ito Akira
• Kawayama Iwao
• Tonouchi Masayoshi
• Sakai Yuji

Classifications

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P34/00

  Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices · CPC title

• G01J1/42

  using electric radiation detectors (optical or mechanical part G01J1/04; by comparison with a reference light or electric value G01J1/10) · CPC title