Dual-port static random access memory (sram)

Patent metadata

Field	Value
Publication number	US-2016078926-A1
Application number	US-201514948196-A
Country	US
Kind code	A1
Filing date	Nov 20, 2015
Priority date	Mar 15, 2013
Publication date	Mar 17, 2016
Grant date	—

Abstract

In one embodiment, a memory cell circuit for storing data includes a pair of cross-coupled inverters for storing states of the memory cell circuit. Access devices provide access to the pair of cross-coupled inverters. The memory cell circuit also includes a set of electrically inactive p-type metal oxide semiconductor (PMOS) devices that are coupled to the pair of cross-coupled inverters. The set of electrically inactive PMOS devices in combination with a portion (e.g., PMOS devices) of the pair of cross-coupled inverters enables a continuous p-type diffusion layer for the memory cell circuit.

First claim

What is claimed is:

1 . A memory cell circuit for storing data, comprising:
a plurality of p-type metal oxide semiconductor (PMOS) devices and a plurality of n-type metal oxide semiconductor (NMOS) devices for storing states of the memory cell circuit; a plurality of access devices with each access device being coupled to at least one of the plurality of PMOS devices and at least one of the plurality of NMOS devices, the plurality of access devices to provide access for storing states of the memory cell circuit; and a set of electrically inactive p-type metal oxide semiconductor (PMOS) devices coupled to the plurality of PMOS devices, the set of electrically inactive PMOS devices in combination with the plurality of PMOS devices to enable a continuous p-type diffusion layer for the memory cell circuit.

2 . The memory cell circuit of claim 1 , wherein the electrically inactive PMOS devices to increase a density of the p-type diffusion layer, wherein at least one electrically inactive PMOS device is coupled to an access device of the plurality of access devices.

3 . The memory cell circuit of claim 1 , wherein a size of at least one access device is increased up to a limit without increasing a height of the memory cell circuit.

4 . The memory cell circuit of claim 1 , wherein the set of electrically inactive PMOS devices comprises four PMOS devices.

5 . The memory cell circuit of claim 1 , further comprising:
a bit line of a first port and a bit line of a second port coupled to the plurality of access devices, the bit lines to transfer data during read and write operations to the pair of cross-coupled inverters; and a Vcc line coupled to the pair of cross-coupled inverters, wherein the Vcc line to isolate the bit line of the first port from the bit line of the second port.

6 . The memory cell circuit of claim 1 , wherein a size of at least one access device is increased up to a limit without increasing a height of the memory cell circuit in conjunction with using a read assist for read access.

7 . The memory cell circuit of claim 1 , further comprising:
a word line of a first port coupled to at least one of the access devices; and a word line of a second port coupled to at least one of the access devices, the word lines to control the access devices, wherein the memory cell circuit comprises four polysilicon tracks to provide for isolation of the word line of the first port from the word line of the second port.

8 . The memory cell circuit of claim 1 , wherein the memory cell circuit comprises a dual-port SRAM cell.

9 . An apparatus for storing data, comprising:
means for storing states of the apparatus with electrically active p-type metal oxide semiconductor (PMOS) devices and n-type metal oxide semiconductor (NMOS) devices; means for providing access for storing states of the apparatus; and a set of electrically inactive PMOS devices coupled to the electrically active PMOS devices, the set of electrical inactive PMOS devices in combination with the electrically active PMOS devices to enable a continuous p-type diffusion layer for the PMOS devices of the apparatus.

10 . The apparatus of claim 9 , wherein the electrically inactive PMOS devices to increase a density of the p-type diffusion layer.

11 . The apparatus of claim 9 , wherein the set of electrically inactive PMOS devices comprises at least two PMOS devices, wherein the mean for providing access for storing states of the apparatus comprises a plurality of access devices with each access device being coupled to at least one of the electrically active PMOS devices and at least one of the NMOS devices.

12 . The apparatus of claim 9 , further comprising:
a bit line of a first port coupled to at least one of the NMOS and PMOS devices; and a bit line of a second port coupled to at least one of the NMOS and PMOS devices, the bit lines to transfer data during read and write operations to the PMOS and NMOS devices.

13 . The apparatus of claim 12 , further comprising:
a Vcc line to provide power to the apparatus and to isolate the bit line of the first port from the bit line of the second port.

14 . The apparatus of claim 9 , further comprising:
a word line of a first port coupled to at least one of the NMOS and PMOS devices; and a word line of a second port coupled to at least one of the NMOS and PMOS devices, the word lines to control the means for providing access to the apparatus, wherein the means for providing access to the apparatus comprises four polysilicon tracks to provide for isolation of the word line of the first port from the word line of the second port.

15 . A computing device, comprising:
a processor; a communication chip coupled to the processor; and one or more arrays each including a plurality of memory cell circuits, each memory cell circuit comprising, a plurality of p-type metal oxide semiconductor (PMOS) devices and a plurality of n-type metal oxide semiconductor (NMOS) devices for storing states of the memory cell circuit; a plurality of access devices with each access device being coupled to at least one of the plurality of PMOS devices and at least one of the plurality of NMOS devices, the plurality of access devices to provide access for storing states of the memory cell circuit; and a set of electrically inactive p-type metal oxide semiconductor (PMOS) devices coupled to the plurality of PMOS devices, the set of electrically inactive PMOS devices in combination with the plurality of PMOS devices to enable a continuous p-type diffusion layer for the memory cell circuit.

16 . The computing device of claim 15 , wherein the electrically inactive PMOS devices to increase a density of the p-type diffusion layer, wherein at least one electrically inactive PMOS device is coupled to an access device of the plurality of access devices.

17 . The computing device of claim 15 , wherein a size of at least one access device is increased up to a limit without increasing a height of the corresponding memory cell circuit.

18 . The computing device of claim 15 , wherein the set of electrically inactive PMOS devices comprises four PMOS devices.

19 . The computing device of claim 15 , further comprising:
a bit line of a first port and a bit line of a second port coupled to the plurality of access devices, the bit lines to transfer data during read and write operations to the pair of cross-coupled inverters; and a Vcc line coupled to the pair of cross-coupled inverters, wherein the Vcc line to isolate the bit line of the first port from the bit line of the second port.

20 . The computing device of claim 19 , wherein a size of at least one access device is increased up to a limit without increasing a height of the memory cell circuit in conjunction with using a read assist for read access.

21 . The computing device of claim 15 , further comprising:
a word line of a first port coupled to at least one of the access devices; and a word line of a second port coupled to at least one of the access devices, the word lines to control the access devices, wherein at least one memory cell circuit comprises four polysilicon tracks to provide for isolation of the word line of the first port from the word line of the second port.

22 . The computing device of claim 15 , wherein at least one memory cell circuit comprises a dual-port SRAM cell.

Assignees

• Intel Corp

Inventors

• Kolar Pramod
• Pandya Gunjan H
• Bhattacharya Uddalak
• Guo Zheng

Classifications

• G11C11/412

  using field-effect transistors only · CPC title

• G11C8/16 Primary

  Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups · CPC title

• G11C11/413

  Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction · CPC title

• G11C11/419 Primary

  Read-write [R-W] circuits · CPC title