Surface treatment apparatus and method for semiconductor substrate
US-2015371845-A1 · Dec 24, 2015 · US
US2016017263A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016017263-A1 |
| Application number | US-201414650565-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 21, 2014 |
| Priority date | Mar 14, 2013 |
| Publication date | Jan 21, 2016 |
| Grant date | — |
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Embodiments of the invention generally provide methods for cleaning a UV processing chamber component. In one embodiment, a method for cleaning a UV processing chamber component includes soaking the chamber component having a SiCO residue formed thereon in a cleaning solution for about 1 to 10 minutes. The cleaning solution comprises about 5% by weight to about 60% weight of NH 4 F and about 0.5% by weight to about 10% by weight of HF. The method also includes polishing the chamber component. In another embodiment, a method of cleaning a processing chamber component fabricated from quartz includes soaking the chamber component having a SiCO residue formed thereon in a cleaning solution comprising about 36% by weight of NH 4 F and about by weight of HF for about 3 minutes. The method also includes applying an ultrasonic power to the cleaning solution, and mechanically polishing the chamber component.
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1 . A method for cleaning an ultraviolet (UV) processing chamber component, comprising: soaking the chamber component having a SiCO residue formed thereon in a cleaning solution comprising about 5% by weight to about 60% by weight of NH 4 F and about 0.5% by weight to about 10% by weight of HF for about 1 to about 10 minutes; and polishing the chamber component. 2 . The method of claim 1 , wherein the cleaning solution further comprises water. 3 . The method of claim 1 , wherein the cleaning solution comprises about 30% by weight to about 40% by weight of NH 4 F. 4 . The method of claim 3 , wherein the cleaning solution comprises about 3% by weight to about 10% by weight of HF. 5 . The method of claim 1 , wherein the chamber component is soaked for about 3 to about 10 minutes. 6 . The method of claim 1 , wherein the method further comprises: applying an ultrasonic power to the cleaning solution. 7 . The method of claim 6 , wherein the ultrasonic power is applied at a power of about 45 W/gallon of the cleaning solution to about 55 W/gallon of the cleaning solution, at a frequency of about 35 kHz to about 45 kHz. 8 . The method of claim 7 , wherein the wherein the ultrasonic power is applied at a power of about 50 W/gallon of the cleaning solution, at a frequency of about 40 kHz. 9 . The method of claim 1 , wherein the chamber component is fabricated from quartz. 10 . The method of claim 9 , wherein the chamber component is a gas distribution showerhead. 11 . A method of cleaning a processing chamber component fabricated from quartz comprising: soaking the chamber component having a SiCO residue formed thereon in a cleaning solution comprising about 36% by weight of NH 4 F and about 5% by weight of HF for about 3 minutes; applying an ultrasonic power to the cleaning solution; and mechanically polishing the chamber component. 12 . The method of claim 11 , wherein the cleaning solution further comprises water. 13 . The method of claim 11 , wherein the ultrasonic power is applied at a power of about 45 W/gallon of the cleaning solution to about 55 W/gallon of the cleaning solution, at a frequency of about 35 kHz to about 45 kHz. 14 . The method of claim 13 , wherein the wherein the ultrasonic power is applied at a power of about 50 W/gallon of the cleaning solution, at a frequency of about 40 kHz. 15 . The method of claim 14 , wherein the chamber component is a gas distribution showerhead.
for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title
by sonic or ultrasonic vibrations · CPC title
Chemistry & Metallurgy · mapped topic
with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration · CPC title
Chemistry & Metallurgy · mapped topic
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