Imaging device for electromagnetic radiation

Patent metadata

Field	Value
Publication number	US-2016015339-A1
Application number	US-201514792715-A
Country	US
Kind code	A1
Filing date	Jul 7, 2015
Priority date	Jul 15, 2014
Publication date	Jan 21, 2016
Grant date	—

Abstract

An imaging device for electromagnetic radiation, especially for x-ray and/or gamma radiation, is disclosed. In an embodiment, the imaging device includes a layering including a number of detection elements, a number of read-out boards and a base board. Each of the detection elements is electrically contacted with a respective read-out board via a plurality of first solder contacts. Each read-out board includes a plurality of through-contacts and is electrically contacted with the base board via a plurality of second solder contacts.

First claim

What is claimed is:

1 . An imaging device for electromagnetic radiation, comprising:
a layered structure including
a number of detection elements,
a number of read-out boards, and
a base board, each of the detection elements being electrically contacted with a respective one of the read-out boards via a plurality of first solder contacts, and each of the read-out boards including a plurality of through-contacts and being electrically contacted with the base board via a plurality of second solder contacts.

2 . The imaging device of claim 1 , wherein a plurality of through-contacts each include a hole through a respective one of the read-out boards, of which an inner wall is clad with a conductive material.

3 . The imaging device of claim 1 , wherein each of the detection elements includes a conversion layer, on which on one side a plurality of contact pins is attached, and wherein each of the contact pins is contacted via a first solder contact with a respective one of the read-out boards.

4 . The imaging device of claim 3 , wherein each of the conversion layers is essentially made of at least one semiconductor material, and wherein each of the at least one semiconductor material is from one of the following compounds:
Cadmium telluride, zinc telluride, cadmium selenide, zinc selenide, manganese telluride, indium phosphide, mercury(II)-iodide and thallium(I,III)-bromide.

5 . The imaging device of claim 1 wherein, as a solder for the first solder contacts, at least one material is used from a group including:
Tin-bismuth, tin-bismuth-silver, tin-bismuth-lead, tin-indium, indium-silver and indium.

6 . The imaging device claim 1 wherein, as a solder for the second solder contacts, at least one material is used from a group including:
Tin-bismuth, tin-bismuth-silver, tin-bismuth-lead, tin-indium, indium-silver and indium.

7 . The imaging device of claim 1 , wherein each of the detection elements is formed by a plate including a polygonal shape, and wherein a corresponding one of the read-out boards contacted with a respective one of the detection elements essentially covers the same area.

8 . The imaging device of claim 7 , wherein at least one part area of the base board is covered essentially completely by a plurality of detection elements or corresponding read-out boards.

9 . The imaging device of claim 8 , wherein the detection elements, which at least essentially completely cover a part area of the base board, each have a rectangular shape.

10 . An x-ray detector, including at least one of the imaging device of claim 1 .

11 . The imaging device of claim 1 , wherein the electromagnetic radiation is at least one of x-ray and gamma radiation.

12 . The imaging device of claim 2 , wherein each of the detection elements includes a conversion layer, on which on one side a plurality of contact pins is attached, and wherein each of the contact pins is contacted via a first solder contact with a respective one of the read-out boards.

13 . The imaging device of claim 12 , wherein each of the conversion layers is essentially made of at least one semiconductor material, and wherein each of the at least one semiconductor material is from one of the following compounds:
Cadmium telluride, zinc telluride, cadmium selenide, zinc selenide, manganese telluride, indium phosphide, mercury(II)-iodide and thallium(I,III)-bromide.

14 . The imaging device of claim 2 wherein, as a solder for the first solder contacts, at least one material is used from a group including:
Tin-bismuth, tin-bismuth-silver, tin-bismuth-lead, tin-indium, indium-silver and indium.

15 . The imaging device claim 2 wherein, as a solder for the second solder contacts, at least one material is used from a group including:
Tin-bismuth, tin-bismuth-silver, tin-bismuth-lead, tin-indium, indium-silver and indium.

16 . The imaging device claim 5 wherein, as a solder for the second solder contacts, at least one material is used from a group including:
Tin-bismuth, tin-bismuth-silver, tin-bismuth-lead, tin-indium, indium-silver and indium.

17 . The imaging device of claim 2 , wherein each of the detection elements is formed by a plate including a polygonal shape, and wherein a corresponding one of the read-out boards contacted with a respective one of the detection elements essentially covers the same area.

18 . The imaging device of claim 17 , wherein at least one part area of the base board is covered essentially completely by a plurality of detection elements or corresponding read-out boards.

19 . The imaging device of claim 18 , wherein the detection elements, which at least essentially completely cover a part area of the base board, each have a rectangular shape.

20 . The x-ray detector of claim 10 , wherein the x-ray detector is a photon-counting x-ray detector.

Assignees

• Siemens Ag

Inventors

• Danzer Ludwig
• Labayen De Inza Miguel
• Wrege Jan

Classifications

• H10F39/1895 Primary

  of the hybrid type · CPC title

• G01T1/247

  Detector read-out circuitry (for processing gain or off-set correction H04N) · CPC title

• A61B6/4241

  using energy resolving detectors, e.g. photon counting · CPC title

• A61B6/4233 Primary

  using matrix detectors · CPC title