Voltage boost circuit

Patent metadata

Field	Value
Publication number	US-2016013718-A1
Application number	US-201414327915-A
Country	US
Kind code	A1
Filing date	Jul 10, 2014
Priority date	Jul 10, 2014
Publication date	Jan 14, 2016
Grant date	—

Abstract

A voltage boost circuit for eDram using thin oxide field effect transistors (FETs) is disclosed. The voltage boost circuit includes a boost capacitor which is precharged with a precharge voltage in a precharge stage and which provides a boosted supply voltage to a thin oxide FET during a pump phase. The voltage boost circuit further include a drive capacitor which provides a turn on voltage to the thin oxide FET so that the boosted supply voltage can pass to an output node in the pump phase.

First claim

What is claimed:

1 . A voltage boost circuit, comprising:
a boost capacitor which is precharged with a precharge voltage in a precharge stage and which provides a boosted supply voltage to a thin oxide FET during a pump phase; and a drive capacitor which provides a turn on voltage to the thin oxide FET so that the boosted supply voltage can pass to an output node in the pump phase.

2 . The voltage boost circuit of claim 1 , wherein the boosted supply voltage is approximately 2× of a supply voltage.

3 . The voltage boost circuit of claim 1 , further comprising a first transistor which supplies a first terminal of the boost capacitor with the precharge voltage and a second transistor which is turned on to provide GND to a second terminal of the boost capacitor.

4 . The voltage boost circuit of claim 3 , further comprising a third transistor which, in the pump phase, is turned on to add a supply voltage to the boost capacitor to obtain the boosted supply voltage.

5 . The voltage boost circuit of claim 4 , wherein, in the pump phase, the first transistor and the second transistor are turned off and the thin oxide FET is turned on by the voltage from the drive capacitor which is less than the boosted supply voltage.

6 . The voltage boost circuit of claim 5 , wherein the voltage from the drive capacitor is equal to the precharge voltage, and the precharge voltage subtracted from the boosted supply voltage is below a reliability limit of the thin oxide FET.

7 . The voltage boost circuit of claim 1 , further comprising a drive-cap precharge circuit which comprises the drive capacitor and a transistor which is controlled by a transfer control circuit, wherein:
the drive-cap precharge circuit precharges the drive capacitor with the precharge voltage during the precharge phase; and the transistor is turned on by a low signal received from the transfer control circuit in order to charge the drive capacitor with the precharge voltage.

8 . The voltage boost circuit of claim 7 , wherein the precharge voltage is provided to a node of the thin oxide FET during the pump phase by opening a plurality of transistors coupled to the thin oxide FET.

9 . The voltage boost circuit of claim 8 , further comprising a bias generator which tailors a current during the precharge phase and pump phase to provide a functional transfer of signal XL 1 to the drive-cap precharge circuit.

10 . The voltage boost circuit of claim 9 , wherein the bias generator provides a signal to the transistor of the drive-cap precharge circuit to turn it on.

11 . The voltage boost circuit of claim 9 , wherein a restore transistor provides a high voltage to the thin oxide FET during the precharge stage to maintain an off state of the thin oxide FET, wherein the high voltage is higher than the precharge voltage.

12 . A voltage boost circuit comprising a boost capacitor, a drive capacitor and a thin oxide FET, wherein the boost capacitor and the drive capacitor have a precharge voltage provided in a precharge phase, and, in a pump phase, a power supply voltage is added to the precharge voltage of the boost capacitor to obtain a boosted output voltage passed across the thin oxide FET to an output node when the thin oxide FET is turned on by the precharge voltage of the drive capacitor applied at a gate node of the thin oxide FET.

13 . The voltage boost circuit of claim 12 , wherein the boosted output voltage is above a reliability limit of the thin oxide FET.

14 . The voltage boost circuit of claim 13 , wherein a difference between the precharge voltage provided by the drive capacitor and the boosted output voltage provided by the boost capacitor is below a reliability limit of the thin oxide FET.

15 . The voltage boost circuit of claim 12 , further comprising respective transistors that are turned on to precharge the boost capacitor and the drive capacitor with a supply voltage.

16 . The voltage boost circuit of claim 15 , further comprising a supply voltage transistor that is turned on during the pump phase to provide the supply voltage to the boost capacitor when the respective transistors are turned off.

17 . The voltage boost circuit of claim 12 , further comprising a restore transistor which provides a high voltage to the thin oxide FET during the precharge stage to maintain an off state of the thin oxide FET, wherein the high voltage is higher than the precharge voltage.

18 . The voltage boost circuit of claim 12 , further comprising a drive-cap precharge circuit which comprises the drive capacitor and a transistor which is controlled by a transfer control circuit, wherein:
the drive-cap precharge circuit precharges the drive capacitor with the precharge voltage during the precharge phase by turning on the transistor; and the transistor is turned on by a low signal received from the transfer control circuit in order to charge the drive capacitor with the precharge voltage.

19 . The voltage boost circuit of claim 18 , further comprising a bias generator which tailors a current during the precharge phase and pump phase to provide a functional transfer of signal XL 1 to the drive-cap precharge circuit, wherein the signal XL 1 is an inverted input signal to turn on the transistor of the drive-cap precharge circuit.

20 . A method comprising:
precharging a first capacitor and a second capacitor with a precharge voltage during a precharge phase; boosting the precharge voltage of the first capacitor to a boosted output voltage during a pump phase; turning on a thin oxide FET by providing the precharge voltage of the second capacitor to a gate node of the thin oxide FET; and passing the boosted output voltage through the thin oxide FET to an output node when the thin oxide FET is turned on.

Assignees

• IBM

Inventors

• Fifield John A
• Pontius Dale E

Classifications

• H02M3/158 Primary

  including plural semiconductor devices as final control devices for a single load · CPC title

• G11C11/4074

  Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits · CPC title

• H02M3/07 Primary

  using capacitors charged and discharged alternately by semiconductor devices with control electrode {, e.g. charge pumps} · CPC title

• G11C11/4085 Primary

  Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge · CPC title