Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium

Patent metadata

Field	Value
Publication number	US-2016013053-A1
Application number	US-201514862980-A
Country	US
Kind code	A1
Filing date	Sep 23, 2015
Priority date	Mar 26, 2013
Publication date	Jan 14, 2016
Grant date	—

Abstract

By obtaining a high-quality film by improving the quality of an oxide film formed at a low temperature, manufacturing costs of a large-scale integrated circuit (LSI) may be decreased. A method of manufacturing a semiconductor device includes (a) accommodating a substrate having thereon a film containing a silazane bond in a process chamber; (b) generating a process gas by supplying a process liquid containing hydrogen peroxide to an evaporator and supplying the process gas to the substrate; and (c) supplying a microwave to the substrate after processing the substrate with the process gas.

First claim

What is claimed is:

1 . A method of manufacturing a semiconductor device comprising:
(a) accommodating a substrate having thereon a film containing a silazane bond in a process chamber; (b) generating a process gas by supplying a process liquid containing hydrogen peroxide to an evaporator and supplying the process gas to the substrate; and (c) supplying a microwave to the substrate after processing the substrate with the process gas.

2 . The method of claim 1 , wherein the evaporator is installed in the process chamber and the process gas is generated within the process chamber.

3 . The method of claim 1 , wherein the process liquid is dripped onto the evaporator to generate the process gas.

4 . The method of claim 2 , wherein the process liquid is dripped onto the evaporator to generate the process gas.

5 . The method of claim 1 , further comprising prebaking the film containing the silazane bond to cure the film before performing the step (b).

6 . The method of claim 1 , further comprising supplying the microwave to the substrate when the step (b) is performed.

7 . The method of claim 1 , wherein the step (c) is performed while varying a frequency of the microwave.

8 . A substrate processing apparatus comprising:
a process chamber configured to accommodate a substrate having thereon a film containing a silazane bond; an evaporation device comprising an evaporator configured to receive a process liquid containing hydrogen peroxide; a microwave supply unit configured to supply a microwave to the substrate; and a control unit configured to control the evaporation device and the microwave supply unit to generate a process gas from the process liquid supplied to the evaporator and supply the microwave to the substrate after the process gas is supplied to the substrate.

9 . The substrate processing apparatus of claim 8 , wherein the evaporator is installed in the process chamber.

10 . The substrate processing apparatus of claim 8 , wherein the process liquid is dripped onto the evaporator to generate the process gas.

11 . The substrate processing apparatus of claim 8 , wherein the control unit is further configured to control the microwave supply unit to supply the microwave to the substrate while varying a frequency of the microwave.

12 . The substrate processing apparatus of claim 8 , wherein the microwave supply unit is configured to supply the microwave in direction parallel to the substrate.

13 . A non-transitory computer-readable recording medium storing a program for causing a computer to control a substrate processing apparatus to perform:
(a) accommodating a substrate having thereon a film containing a silazane bond in a process chamber; (b) generating a process gas by supplying a process liquid containing hydrogen peroxide to an evaporator and supplying the process gas to the substrate; and (c) supplying a microwave to the substrate after processing the substrate with the process gas.

14 . The non-transitory computer-readable recording medium of claim 13 , wherein the evaporator is installed in the process chamber, and the process gas is generated within the process chamber.

15 . The non-transitory computer-readable recording medium of claim 13 , further comprising prebaking the film containing the silazane bond to cure the film before performing the sequence (b).

16 . The non-transitory computer-readable recording medium of claim 13 , further comprising supplying the microwave to the substrate when the sequence (b) is performed.

17 . The non-transitory computer-readable recording medium of claim 13 , wherein the sequence (c) is performed while varying a frequency of the microwave.

Assignees

• Hitachi Int Electric Inc

Inventors

• Ashihara Hiroshi
• Hiyama Shin
• Okuno Masahisa
• Wada Yuichi
• Sakuma Harunobu

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6689

  the compound being a silazane · CPC title

• H10P14/6529

  by exposure to a gas or vapour · CPC title

• H10P14/6522

  introduced into a nitride material, e.g. changing SiN to SiON · CPC title

• H10P14/6536 Primary

  by exposure to radiation, e.g. visible light · CPC title