Semiconductor substrate cleaning system and method for cleaning semiconductor substrate

Patent metadata

Field	Value
Publication number	US-2016013047-A1
Application number	US-201414771890-A
Country	US
Kind code	A1
Filing date	Feb 28, 2014
Priority date	Mar 1, 2013
Publication date	Jan 14, 2016
Grant date	—

Abstract

There is provided a method for cleaning a semiconductor substrate to remove platinum and/or a platinum alloy from the semiconductor substrate having a layer having Si as its constituting component, and the method enables Al, a silicide film, a Si-based insulating film, a Si-based substrate and the like to be effectively cleaned without being damaged.
The method for cleaning a semiconductor substrate to remove platinum and/or a platinum alloy from the semiconductor substrate having a layer having Si as its constituting component comprises a first cleaning step of bringing the semiconductor substrate into contact with a first solution containing nitric acid and/or hydrogen peroxide as main solutes to thereby clean the semiconductor substrate, and a second cleaning step of bringing the semiconductor substrate having undergone the first cleaning step into contact with a second solution containing an oxidizing agent-containing sulfuric acid solution and a halide and having a temperature of 25 to 100° C., to thereby clean the semiconductor substrate.

First claim

1 . A method for cleaning a semiconductor substrate to remove platinum and/or a platinum alloy from the semiconductor substrate having a layer having Si as a constituting element thereof, the method comprising:
a first cleaning step of bringing the semiconductor substrate into contact with a first solution containing nitric acid and/or hydrogen peroxide as main solutes to thereby clean the semiconductor substrate; and a second cleaning step of bringing the semiconductor substrate having undergone the first cleaning step into contact with a second solution containing an oxidizing agent-containing sulfuric acid solution and a halide and having a temperature of 25 to 100° C., to thereby clean the semiconductor substrate.

2 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the semiconductor substrate is any one of a semiconductor substrate having an insulating film constituted of a Si compound, a semiconductor substrate constituted of Si or a Si compound semiconductor, and a semiconductor substrate having a silicide film.

3 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the semiconductor substrate has a silicide film containing platinum formed thereon.

4 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the semiconductor substrate has Al present thereon.

5 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the semiconductor substrate has SiO 2 platinum and/or a platinum alloy and SiO 2 exposed thereon.

6 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the semiconductor substrate is a SiC substrate having platinum and/or a platinum alloy exposed thereon.

7 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the semiconductor substrate is a SiGe substrate having platinum and/or a platinum alloy exposed thereon.

8 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the halide comprises one or more selected from the group consisting of chlorides, bromides and iodides.

9 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the first solution contains 80% or more in mass ratio of nitric acid and/or hydrogen peroxide with respect to the whole solutes.

10 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the first solution contains nitric acid, and has a nitric acid concentration of 1 to 60% by mass.

11 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the first solution contains hydrogen peroxide, and has a hydrogen peroxide concentration of 1 to 35% by mass.

12 . The method for cleaning a semiconductor substrate according to claim 11 , wherein the hydrogen peroxide concentration is 2 to 35% by mass.

13 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the first solution in the first cleaning step has a temperature of 25 to 100° C.

14 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the second solution has a sulfuric acid concentration of 40 to 80% by mass.

15 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the second solution has an oxidizing agent concentration of 0.001 to 2 mol/L.

16 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the oxidizing agent is persulfuric acid.

17 . The method for cleaning a semiconductor substrate according to claim 1 , wherein the oxidizing agent-containing sulfuric acid solution of the second solution is one or more selected from the group consisting of sulfuric acid electrolytic solutions, mixed solutions of sulfuric acid and hydrogen peroxide, and mixed solutions of sulfuric acid and ozone.

18 . The method for cleaning a semiconductor substrate according to claim 1 , further comprising, before the second cleaning step, a first solution discharge step of discharging the first solution from the semiconductor substrate having undergone the first cleaning step.

19 . A system for cleaning a semiconductor substrate, comprising:
a cleaning section carrying out cleaning to remove platinum and/or a platinum alloy from a semiconductor substrate having a layer having Si as a constituting element thereof; a first solution-accommodating section accommodating a first solution containing nitric acid and/or hydrogen peroxide as main solutes; a second solution-accommodating section accommodating a second solution containing an oxidizing agent-containing sulfuric acid solution and a halide; a first solution supply line having one end thereof connected to the first solution accommodating section and the other end thereof connected to the cleaning section, and supplying the first solution from the first solution-accommodating section to the cleaning section; a second solution supply line having one end thereof connected to the second solution-accommodating section and the other end thereof connected to the cleaning section, and supplying the second solution from the second solution-accommodating section to the cleaning section; a first solution temperature-regulating section provided on the first solution supply line and regulating the solution temperature of the first solution supplied to the cleaning section through the first solution supply line at a predetermined temperature; a first solution delivery section connected to the end on the cleaning section side of the first solution supply line and delivering the first solution in the cleaning section to thereby bring the first solution into contact with the semiconductor substrate; and a second solution delivery section connected to the end on the cleaning section side of the second solution supply line and delivering the second solution in the cleaning section to thereby bring the second solution into contact with the semiconductor substrate.

20 . The system for cleaning a semiconductor substrate according to claim 19 , further comprises a cleaning control section controlling the supplies of the first solution and the second solution to carry out the first cleaning step of carrying out cleaning of the semiconductor substrate by using the first solution in the cleaning section and to carry out, after the first cleaning step, the second cleaning step of carrying out cleaning of the semiconductor substrate by using the second solution in the cleaning section.

Assignees

• Ogawa Yuichi
• Kurita Water Ind Ltd

Inventors

• Ogawa Yuichi

Classifications

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P50/667

  by liquid etching only · CPC title

• H10P70/27 Primary

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H01L21/02068 Primary

  Electricity · mapped topic