Method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-2016013044-A1
Application number	US-201514864167-A
Country	US
Kind code	A1
Filing date	Sep 24, 2015
Priority date	Jan 14, 2011
Publication date	Jan 14, 2016
Grant date	—

Abstract

An insulating film including characteristics such as low permittivity, a low etching rate and a high insulation property is formed. Supplying a gas containing an element, a carbon-containing gas and a nitrogen-containing gas to a heated substrate in a processing vessel to form a carbonitride layer including the element, and supplying the gas containing the element and an oxygen-containing gas to the heated substrate in the processing vessel to form an oxide layer including the element are alternately repeated to form on the substrate an oxycarbonitride film having the carbonitride layer and the oxide layer alternately stacked therein.

First claim

What is claimed is:

1 . A method of manufacturing a semiconductor device, comprising:
(a) supplying a gas containing an element, a carbon-containing gas and a nitrogen-containing gas to a substrate to form a carbonitride layer including the element; (b) supplying a boron-containing gas and a nitrogen-containing gas to the substrate to form a boron nitride layer; and (c) alternately repeating (a) and (b) to form on the substrate a boron carbonitride film having the carbonitride layer and the boron nitride layer alternately stacked therein.

2 . The method according to claim 1 , wherein (a) comprises performing a first set of processes including supplying the gas containing the element to the substrate, supplying the carbon-containing gas to the substrate and supplying the nitrogen-containing gas to the substrate a predetermined number of times, and (b) comprises performing a second set of processes including supplying the boron-containing gas to the substrate and supplying the nitrogen-containing gas to the substrate a predetermined number of times.

3 . The method according to claim 1 , wherein (a) comprises performing a first set of processes including supplying the gas containing the element to the substrate to form a element-containing layer including the element, supplying the carbon-containing gas to the substrate to form a carbon-containing layer on the first element-containing layer to form a layer including the element and carbon, and supplying the nitrogen-containing gas to the substrate to nitride the layer including the element and carbon a predetermined number of times to form the carbonitride layer including the element, and (b) comprises performing a second set of processes including supplying the boron-containing gas to the substrate to form a boron-containing layer, and supplying the nitrogen-containing gas to the substrate to nitride the boron-containing layer a predetermined number of times to form the boron nitride layer.

4 . The method according to claim 3 , wherein the element-containing layer comprises at least one layer selected from a group consisting of a continuous deposition layer of the element, a discontinuous deposition layer of the element, a continuous chemisorption layer of the gas containing the element, and a discontinuous chemisorption layer of the gas containing the element.

5 . The method according to claim 3 , wherein the carbon-containing layer comprises a discontinuous chemisorption layer of the carbon-containing gas.

6 . The method according to claim 3 , wherein the carbon-containing layer comprises a chemisorption layer of the carbon-containing gas, an adsorption state of the chemisorption layer being unsaturated state.

7 . The method according to claim 3 , wherein the boron-containing layer comprises a discontinuous chemisorption layer of the boron-containing gas.

8 . The method according to claim 3 , wherein the boron-containing layer comprises a chemisorption layer of the boron-containing gas, an adsorption state of the chemisorption layer being unsaturated state.

9 . The method according to claim 3 , wherein (a) comprises thermally nitriding the layer including the element and carbon under a condition where a nitridation reaction by the nitrogen-containing gas in the layer including the element and carbon is unsaturated.

10 . The method according to claim 3 , wherein (b) comprises thermally nitriding he boron-containing layer under a condition where a nitridation reaction by the nitrogen-containing gas in the boron-containing layer is unsaturated.

11 . The method according to claim 3 , wherein the element-containing layer comprises supplying the gas containing the element to the substrate under a condition where a CVD reaction occurs.

12 . The method according to claim 1 , wherein the element comprises a semiconductor element or a metal element.

13 . The method according to claim 1 , wherein the element comprises silicon.

14 . The method according to claim 1 , wherein the boron carbonitride film comprises SiBCN film, the carbonitride layer comprises SiCN layer, and the boron nitride layer comprises BN layer.

15 . A method of manufacturing a semiconductor device, comprising:
(a) performing a first set of processes including supplying a gas containing an element to a substrate to form an element-containing layer including the element, supplying a carbon-containing gas to the substrate to form a carbon-containing layer on the element-containing layer to form a layer including the element and carbon, and supplying a nitrogen-containing gas to the substrate to nitride the layer including the element and carbon a predetermined number of times to form a carbonitride layer including the element; (b) performing a second set of processes including supplying a boron-containing gas to the substrate to form a boron-containing layer and supplying the nitrogen-containing gas to the substrate to nitride the boron-containing layer a predetermined number of times to form a boron nitride layer; and (c) alternately repeating (a) and (b) to form on the substrate a boron carbonitride film having the carbonitride layer and the boron nitride layer alternately stacked therein.

16 . A method of manufacturing a semiconductor device, comprising:
(a) performing a process of supplying a gas containing an element to a substrate to form an element-containing layer including the element, a process of supplying a carbon-containing gas to the substrate to form a carbon-containing layer on the element-containing layer to form a layer including the element and carbon, and a process of supplying a nitrogen-containing gas to the substrate to nitride the layer including the element and carbon to form a carbonitride layer including the element, (b) performing a process of supplying a boron-containing gas to the substrate to form a boron-containing layer and a process of supplying the nitrogen-containing gas to the substrate to nitride the boron-containing layer to form a boron nitride layer; and (c) alternately repeating (a) and (b) to form on the substrate a boron carbonitride film having the carbonitride layer and the boron nitride layer alternately stacked therein.

Assignees

• Hirose Yoshiro
• Takasawa Yushin
• Kamakura Tsukasa
• Nakamura Yoshinobu
• Sasajima Ryota
• Hitachi Int Electric Inc

Inventors

• Hirose Yoshiro
• Takasawa Yushin
• Kamakura Tsukasa
• Nakamura Yoshinobu
• Sasajima Ryota

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/68

  Organic materials, e.g. photoresists · CPC title