Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber

Patent metadata

Field	Value
Publication number	US-2016013022-A1
Application number	US-201414771169-A
Country	US
Kind code	A1
Filing date	Feb 12, 2014
Priority date	Mar 15, 2013
Publication date	Jan 14, 2016
Grant date	—

Abstract

Embodiments of the present invention relate to apparatus for enhancing deposition rate and improving a plasma profile during plasma processing of a substrate. According to embodiments, the apparatus includes a tuning electrode disposed in a substrate support pedestal and electrically coupled to a variable capacitor. The capacitance is controlled to control the RF and resulting plasma coupling to the tuning electrode. The plasma profile and the resulting deposition rate and deposited film thickness across the substrate are correspondingly controlled by adjusting the capacitance and impedance at the tuning electrode.

First claim

1 . A plasma processing apparatus, comprising:
a chamber body and a powered gas distribution manifold enclosing a process volume; a pedestal disposed in the process volume for supporting a substrate; and a tuning electrode disposed within the pedestal and electrically coupled to a variable capacitor.

2 . The plasma processing apparatus of claim 1 , wherein the variable capacitor is coupled to a sensor and a controller configured to control the capacitance of the variable capacitor.

3 . The plasma processing apparatus of claim 1 , wherein the variable capacitor is coupled to a sensor and a controller configured to control the current flowing through the variable capacitor.

4 . The plasma processing apparatus of claim 1 , wherein the tuning electrode comprises a conductive mesh.

5 . The plasma processing apparatus of claim 1 , wherein the variable capacitor is a variable vacuum capacitor.

6 . A method for processing a substrate, comprising:
powering a gas distribution manifold using an RF source while flowing one or more process gases into a plasma chamber to form a plasma within a process volume of the chamber; and controlling the plasma by varying a capacitance of a tuning electrode disposed within a substrate support pedestal within a chamber body of the chamber.

7 . The method of claim 6 , further comprising controlling an impedance to the tuning electrode by varying the capacitance of the tuning electrode.

8 . The method of claim 7 , further comprising tuning the impedance to the tuning electrode to a minimum value by varying the capacitance of the tuning electrode.

9 . The method of claim 6 , further comprising controlling a current to the tuning electrode by varying the capacitance of the tuning electrode.

10 . The method of claim 9 , further comprising tuning the current to the tuning electrode to a maximum value by varying the capacitance of the tuning electrode.

11 . The method of claim 6 , further comprising decreasing the plasma density at the edge of the substrate by increasing the capacitance of the tuning electrode.

12 . A substrate support assembly for use in a plasma processing apparatus, comprising:
a substrate support pedestal; a tuning electrode disposed within the substrate support pedestal; and a variable capacitor electrically coupled to the tuning electrode.

13 . The substrate support assembly of claim 12 , further comprising a sensor coupled to the tuning electrode.

14 . The substrate support assembly of claim 12 , wherein the tuning electrode comprises a conductive mesh.

Assignees

• Applied Materials Inc

Inventors

• Ayoub Mohamad A
• Chen Jian J
• Bansal Amit K

Classifications

• H01J2237/3321

  CVD [Chemical Vapor Deposition] · CPC title

• C23C16/505

  using radio frequency discharges · CPC title

• H01J37/3244

  Gas supply means · CPC title

• H01J37/32174 Primary

  Circuits specially adapted for controlling the RF discharge · CPC title

• H01J37/32935

  Monitoring and controlling tubes by information coming from the object and/or discharge · CPC title