Radiation Source-Collector and Method for Manufacture

Patent metadata

Field	Value
Publication number	US-2016012929-A1
Application number	US-201414765367-A
Country	US
Kind code	A1
Filing date	Jan 14, 2014
Priority date	Feb 15, 2013
Publication date	Jan 14, 2016
Grant date	—

Abstract

A method of manufacturing a multi-layer mirror comprising a multi-layer stack of pairs of alternating layers of a first material and silicon, the method comprising depositing a stack of pairs of alternating layers of the first material and layers of silicon, the stack being supported by a substrate and doping at least a first layer of the first material with a dopant material.

First claim

1 . A method of manufacturing a multi-layer mirror, comprising a multi-layer stack of pairs of alternating layers of a first material and silicon, the method comprising:
disposing, on a substrate, a stack of pairs of alternating layers of the first material and layers of silicon; and doping at least a first layer of the first material with a dopant material.

2 . (canceled)

3 . The method according to claim 1 , wherein the dopant material is hydrogen.

4 . The method according to claim 3 , wherein doping the first layer of the first material comprises incorporating at least 20 atomic percent hydrogen into the first layer of the first material.

5 . The method according to claim 1 , wherein the dopant material is a noble gas.

6 . (canceled)

7 . The method according to claim 5 , wherein doping the first layer of the first material comprises incorporating up to 10 atomic percent of the dopant material into the first layer of the first material.

8 . The method according to claim 1 , wherein doping comprises incorporating the dopant material into the first layer of the first material during the deposition of the first layer of the first material.

9 . The method according to claim 8 , wherein doping comprises depositing the first layer of the first material in the presence of a gas phase dopant material.

10 . The method according to claim 1 , wherein the first layer of the first material is the layer of the first material that is disposed furthest from the substrate.

11 . The method according to claim 1 , further comprising doping at least a first silicon layer with hydrogen.

12 . The method according to claim 11 , wherein doping the first silicon layer comprises incorporating at least 10 atomic percent hydrogen into the first silicon layer.

13 . (canceled)

14 . The method according to claim 11 , wherein doping comprises incorporating the hydrogen into the first silicon layer during the deposition of the first silicon layer.

15 . A multi-layer mirror, comprising:
a multi-layer stack of pairs of alternating layers of a first material and silicon; and substrate configured to support the multi-layer stack, wherein at least a first layer of the first material is doped with a dopant material.

16 . (canceled)

17 . The multi-layer mirror according to claim 15 , wherein the dopant material is hydrogen.

18 . The multi-layer mirror according to claim 17 , wherein the first layer of the first material comprises at least 20 atomic percent hydrogen.

19 . The multi-layer mirror according to claim 15 , wherein the dopant material is a noble gas.

20 . (canceled)

21 . The multi-layer mirror according claim 19 , wherein the first layer of the first material comprises up to 10 atomic percent of the dopant material.

22 . The multi-layer mirror according to claim 15 , wherein the first layer of the first material is the layer of the first material that is disposed furthest from the substrate.

23 . The multi-layer mirror according to claim 15 , wherein at least a first silicon layer is doped with hydrogen.

24 . The multi-layer mirror according to claim 23 , wherein the first silicon layer comprises at least 10 atomic percent hydrogen.

25 . (canceled)

26 . A lithographic apparatus comprising a multi-layer mirror according to claim 15 .

27 .- 42 . (canceled)

Assignees

• Asml Netherlands Bv

Inventors

• Kuznetsov Alexey Sergeevich
• Boogaard Arjen
• Huijbregtse Jeroen Marcel
• Nikipelov Andrey
• Van Kampen Maarten

Classifications

• H05G2/008

  involving an energy-carrying beam in the process of plasma generation · CPC title

• G03F7/70916

  Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps · CPC title

• G03F7/70316

  Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements · CPC title

• G03F7/70033

  by plasma extreme ultraviolet [EUV] sources · CPC title

• C23C28/34

  including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates · CPC title