High-frequency module and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-2016006131-A1
Application number	US-201514740507-A
Country	US
Kind code	A1
Filing date	Jun 16, 2015
Priority date	Jul 4, 2014
Publication date	Jan 7, 2016
Grant date	—

Abstract

A high-frequency module includes an integrated body including a semiconductor chip and a reflector, the semiconductor and the reflector being integrated by a resin; an antenna provided with a space from the reflector; and a rewiring layer provided on the surface of the integrated body, the rewiring layer including a rewiring line electrically coupling the semiconductor chip to the antenna. Further, a method for manufacturing a high-frequency module, the method includes forming an integrated body by integrating a semiconductor chip with a reflector by a resin; and forming a rewiring layer on the surface of the integrated body, the rewiring layer including a rewiring line electrically coupling the semiconductor chip to an antenna provided with a space from the reflector.

First claim

What is claimed is:

1 . A high-frequency module comprising:
an integrated body including a semiconductor chip and a reflector, the semiconductor and the reflector being integrated by a resin; an antenna provided with a space from the reflector; and a rewiring layer provided on the surface of the integrated body, the rewiring layer including a rewiring line electrically coupling the semiconductor chip to the antenna.

2 . The high-frequency module according to claim 1 , wherein
the integrated body includes a distance adjuster configured to adjust a distance between the reflector and the antenna.

3 . The high-frequency module according to claim 2 , wherein
the distance adjuster is a dielectric layer provided on the antenna side of the reflector.

4 . The high-frequency module according to claim 1 , wherein
the integrated body includes a dielectric layer that comes into contact with the antenna side of the reflector, the dielectric layer including a surface exposed on the surface of the integrated body.

5 . The high-frequency module according to claim 3 , wherein
the antenna is provided on the surface of the dielectric layer.

6 . The high-frequency module according to claim 2 , wherein
the distance adjuster is a protrusion part configured to protrude from the reflector toward the antenna.

7 . The high-frequency module according to claim 1 , wherein
the integrated body includes a protrusion part configured to protrude from the antenna side of the reflector, the protrusion part including an end face exposed on the surface of the integrated body.

8 . The high-frequency module according to claim 6 , wherein
the reflector and the protrusion part are formed of conductors.

9 . The high-frequency module according to claim 6 , wherein
the reflector is formed of a conductor, and the protrusion part is formed of a dielectric material.

10 . The high-frequency module according to claim 6 , wherein
a region defined by the reflector and the protrusion part in the integrated body is filled with the resin.

11 . The high-frequency module according to claim 10 , wherein
the antenna is provided on the surface of the resin.

12 . The high-frequency module according to claim 6 , wherein
a region defined by the reflector and the protrusion part in the integrated body is filled with a dielectric material.

13 . The high-frequency module according to claim 12 , wherein
the antenna is provided on the surface of the dielectric material.

14 . The high-frequency module according to claim 6 , wherein
a region defined by the reflector and the protrusion part in the integrated body is an empty space.

15 . A method for manufacturing a high-frequency module, the method comprising:
forming an integrated body by integrating a semiconductor chip with a reflector by a resin; and forming a rewiring layer on the surface of the integrated body, the rewiring layer including a rewiring line electrically coupling the semiconductor chip to an antenna provided with a space from the reflector.

16 . The method for manufacturing a high-frequency module according to claim 15 ,
wherein, in the forming the integrated body, the semiconductor chip, the reflector and a distance adjuster configured to adjust a distance between the reflector and the antenna are integrated by the resin to form the integrated body, and in the forming the rewiring layer, the rewiring layer is formed on the surface of the integrated body on the side where the distance adjuster is exposed.

17 . The method for manufacturing a high-frequency module according to claim 15 , the method further comprising:
providing a dielectric layer in the reflector before the forming the integrated body, wherein, in the forming the integrated body, the semiconductor chip and the reflector having the dielectric layer provided therein are integrated by the resin to form the integrated body, and in the forming the rewiring layer, the rewiring layer is formed on the surface of the integrated body on the side where the dielectric layer is exposed.

18 . The method for manufacturing a high-frequency module according to claim 17 ,
wherein, in the forming the rewiring layer, the antenna is formed on the surface of the dielectric layer.

19 . The method for manufacturing a high-frequency module according to claim 15 , the method further comprising:
providing a dielectric layer in the reflector and providing the antenna on the surface of the dielectric layer before the forming the integrated body, wherein, in the forming the integrated body, the semiconductor chip and the reflector having the dielectric layer and the antenna provided therein are integrated by the resin to form the integrated body, and in the forming the rewiring layer, the rewiring layer is formed on the surface of the integrated body on the side where the antenna is exposed.

20 . The method for manufacturing a high-frequency module according to claim 15 , the method further comprising:
providing a protrusion part in the reflector before the forming the integrated body, wherein, in the forming the integrated body, the semiconductor chip and the reflector having the protrusion part provided therein are integrated by the resin to form the integrated body, wherein, in the forming the rewiring layer, the rewiring layer is formed on the surface of the integrated body on the side where the protrusion part is exposed.

Assignees

• Fujitsu Ltd

Inventors

• Matsumura Hiroshi
• Ishibashi Daijiro
• Suzuki Toshihide
• Kawano Yoichi

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W74/142

  the encapsulations exposing the passive side of the semiconductor body · CPC title

• H10W74/111

  the semiconductor body being completely enclosed · CPC title

• H10W74/019

  using temporary auxiliary substrates (H10W74/017 takes precedence) · CPC title

• H10W74/014

  using batch processing · CPC title