High frequency module and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-2015262842-A1
Application number	US-201514620646-A
Country	US
Kind code	A1
Filing date	Feb 12, 2015
Priority date	Mar 17, 2014
Publication date	Sep 17, 2015
Grant date	—

Abstract

A high frequency module includes: a semiconductor chip provided over a first surface side of a resin layer; a first waveguide provided over the first surface side of the resin layer and sealed together with the semiconductor chip by a resin; a wire provided over a second surface side of the resin layer and electrically coupled to the semiconductor chip and extending to a position of the first waveguide; a second waveguide bonded to the first waveguide; and a metal plate provided over the first surface side of the resin layer at a position opposite to the first waveguide and electrically coupled to the wire, wherein a part of the wire extending to the position of the first waveguide serves as an antenna coupler.

First claim

What is claimed is:

1 . A high frequency module comprising:
a semiconductor chip provided over a first surface side of a resin layer; a first waveguide provided over the first surface side of the resin layer and sealed together with the semiconductor chip by a resin; a wire provided over a second surface side of the resin layer and electrically coupled to the semiconductor chip and extending to a position of the first waveguide; a second waveguide bonded to the first waveguide; and a metal plate provided over the first surface side of the resin layer at a position opposite to the first waveguide and electrically coupled to the wire, wherein a part of the wire extending to the position of the first waveguide serves as an antenna coupler.

2 . The high frequency module according to claim 1 , further comprising:
a dielectric plate provided within the first waveguide.

3 . The high frequency module according to claim 2 , wherein the dielectric plate is formed of any one material selected from a group consisting of benzocyclobutene, a liquid crystal polymer, a cycloolefin polymer, polyolefin, polyphenylene ether, polystyrene, and polytetrafluoroethylene.

4 . The high frequency module according to claim 1 , wherein the wire is electrically coupled to the semiconductor chip through a via provided in the resin layer.

5 . The high frequency module according to claim 1 , wherein the resin layer is formed of a dielectric film, and the dielectric film is formed of any one material selected from a group consisting of benzocyclobutene, a liquid crystal polymer, cycloolefin polymer, polyolefin, polyphenylene ether, polystyrene, and polytetrafluoroethylene.

6 . A manufacturing method of a high frequency module, the method comprising:
disposing a first waveguide and a semiconductor chip over a sheet; sealing the semiconductor chip and the first waveguide with a resin; grinding the resin until a part of the first waveguide is exposed; removing the sheet from the first waveguide and the semiconductor chip; forming a resin layer over a side where the sheet is removed; forming a wire over the resin layer; bonding a second waveguide to the first waveguide; and forming a metal plate electrically coupled to the wire over an upper side of the wire at a position opposite to the first waveguide.

7 . The manufacturing method according to claim 6 , wherein before the sealing of the semiconductor chip and the first waveguide with the resin, a dielectric plate is provided within the first waveguide.

8 . The manufacturing method according to claim 7 , wherein the dielectric plate is provided such that a circuit surface of the semiconductor chip and a front surface of the dielectric plate are disposed over the same plane.

9 . The manufacturing method according to claim 6 , wherein before the sealing of the semiconductor chip and the first waveguide by resin, a cover is provided to close an opening of the first waveguide.

10 . The manufacturing method according to claim 9 , wherein when grinding the resin, the cover is also grinded and removed to expose a part of the waveguide.

11 . The manufacturing method according to claim 6 , further comprising:
forming a via in the resin layer after forming the resin layer, forming a wiring layer which is conductive to the via on the resin layer.

12 . The manufacturing method according to claim 6 , wherein after removing the sheet from the first waveguide and the semiconductor chip, the forming of the resin layer includes:
attaching a dielectric film including a conductor layer onto the resin, the semiconductor chip, and the first waveguide; forming a via in the dielectric film; and patterning the conductive layer to form a line conductor.

13 . The manufacturing method according to claim 6 , wherein after removing the sheet from the first waveguide and the semiconductor chip, a dielectric film in which a via and a line conductor coupled to the via are formed is provided over the resin.

Assignees

• Fujitsu Ltd

Inventors

• Iijima Shinya

Classifications

• H10W74/473

  containing a filler · CPC title

• H10W74/019

  using temporary auxiliary substrates (H10W74/017 takes precedence) · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title

• H10W72/9413

  on encapsulations · CPC title

• H10W72/0198

  batch processes · CPC title