Solid-state image pickup device

Patent metadata

Field	Value
Publication number	US-2016005776-A1
Application number	US-201514856354-A
Country	US
Kind code	A1
Filing date	Sep 16, 2015
Priority date	Jul 9, 2010
Publication date	Jan 7, 2016
Grant date	—

Abstract

A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order.
Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.

First claim

1 . A solid-state image pickup device comprising:
a first substrate provided with a photoelectric converter disposed on its primary face; a first wiring structure which is disposed on the primary face of the first substrate and which has a first bonding portion containing a conductive material; a second substrate provided with, on its primary face, a part of a peripheral circuit including a control circuit and a readout circuit reading out a signal based on a charge of the photoelectric converter; and a second wiring structure which is disposed on the primary face of the second substrate and which has a second bonding portion containing a conductive material, wherein the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order, and the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.

2 . The solid-state image pickup device according to claim 1 , wherein
the first bonding portion contains the conductive material and a barrier metal, the second bonding portion contains the conductive material and a barrier metal, and the diffusion preventing films comprise the respective barrier metals.

3 . The solid-state image pickup device according to claim 2 , wherein
the first wiring structure has an interlayer insulating film in which the first bonding portion is disposed, and the barrier metal of the first bonding portion is disposed between the conductive material of the first bonding portion and the interlayer insulating film.

4 . The solid-state image pickup device according claim 2 , wherein
the second wiring structure has an interlayer insulating film in which the second bonding portion is disposed, and the barrier metal of the second bonding portion is disposed between the conductive material of the second bonding portion and the interlayer insulating film.

5 . The solid-state image pickup device according to claim 1 ,
wherein the conductive materials each comprise a metal having a higher diffusion coefficient than that of aluminum or an alloy containing the metal.

6 . The solid-state image pickup device according to claim 5 , wherein the conductive materials each comprise copper or an alloy primarily composed of copper.

7 . The solid-state image pickup device according to claim 1 , wherein
the diffusion preventing films include a second diffusion preventing film, and the upper face of the second wiring structure is comprised of the second bonding portion and the second diffusion preventing film.

8 . The solid-state image pickup device according to claim 7 , wherein the second diffusion preventing film is patterned to surround the periphery of the second bonding portion.

9 . The solid-state image pickup device according to claim 7 , wherein the second diffusion preventing film is a silicon nitride film or a silicon carbide film.

10 . The solid-state image pickup device according to claim 1 , wherein the second substrate is further provided with an amplification transistor outputting a signal based on a charge of the photoelectric converter and a reset transistor resetting the charge of the photoelectric converter.

11 . An imaging system comprising: the solid-state image pickup device according to claim 1 ; and
a signal processing circuit processing a signal from the solid-state image pickup device.

Assignees

• Canon Kk

Inventors

• Shimotsusa Mineo

Classifications

• H10W72/932

  Plan-view shape, i.e. in top view · CPC title

• H10W72/934

  Cross-sectional shape, i.e. in side view · CPC title

• H10W72/921

  Structures or relative sizes of bond pads · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title