Semiconductor Constructions

Patent metadata

Field	Value
Publication number	US-2016005693-A1
Application number	US-201414321466-A
Country	US
Kind code	A1
Filing date	Jul 1, 2014
Priority date	Jul 1, 2014
Publication date	Jan 7, 2016
Grant date	—

Abstract

Some embodiments include a construction having conductive structures spaced from one another by intervening regions. Insulative structures are within the intervening regions. The insulative structures include dielectric spacers and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps. The dielectric capping material is between the dielectric spacers and not over upper surfaces of the dielectric spacers. Some embodiments include a construction having a first conductive structure with an upper surface, and having a plurality of second conductive structures electrically coupled with the upper surface of the first conductive structure and spaced from one another by intervening regions. Air gap/spacer insulative structures are within the intervening regions. The air gap/spacer insulative structures have dielectric spacers along sidewalls of the second conductive structures and air gaps between the dielectric spacers. Dielectric capping material is over the air gaps.

First claim

1 . A construction, comprising:
conductive structures spaced from one another by intervening regions; insulative structures within the intervening regions, the insulative structures comprising dielectric spacers along sidewalls of the conductive structures, and comprising air gaps between the dielectric spacers; and the insulative structures comprising dielectric capping material over the air gaps; the dielectric capping material being between the dielectric spacers and not over upper surfaces of the dielectric spacers; the dielectric capping material comprising a different composition than the dielectric spacers.

2 . The construction of claim 1 wherein the dielectric spacers are configured as pillars having substantially constant thickness along entireties of their heights.

3 . The construction of claim 1 wherein the dielectric capping material comprises silicon oxynitride.

4 . The construction of claim 1 wherein the dielectric capping material comprises silicon oxynitride; and wherein the dielectric spacers comprise one or more of aluminum oxide, hafnium oxide, silicon oxide, zirconium oxide and silicon nitride.

5 . The construction of claim 1 having substantially right angle corners at locations where the dielectric capping material joins the dielectric spacers.

6 . The construction of claim 1 wherein the conductive structures comprise copper.

7 . The construction of claim 1 wherein the dielectric spacers comprise one or more of aluminum oxide, hafnium oxide, silicon oxide, zirconium oxide and silicon nitride.

8 . The construction of claim 1 wherein the dielectric spacers comprise only a single homogeneous composition.

9 . The construction of claim 1 wherein the dielectric spacers comprise a laminate of two or more different compositions.

10 . The construction of claim 1 wherein the dielectric spacers comprise a laminate of silicon nitride and an oxide.

11 . The construction of claim 10 wherein the oxide is selected from the group consisting of aluminum oxide, hafnium oxide, silicon oxide and zirconium oxide.

12 . The construction of claim 1 wherein the conductive structures are conductive lines.

13 . The construction of claim 12 wherein the conductive lines are on a uniform pitch.

14 . The construction of claim 12 wherein the conductive lines are on a non-uniform pitch.

15 . A construction, comprising:
a first conductive structure having an upper surface; a plurality of second conductive structures electrically coupled with the upper surface of the first conductive structure and spaced from one another by intervening regions; air gap/spacer insulative structures within the intervening regions between the second conductive structures, the air gap/spacer insulative structures comprising dielectric spacers along sidewalls of the second conductive structures, and comprising air gaps between the dielectric spacers; and dielectric capping material over the air gaps; the dielectric capping material being between the dielectric spacers and not over upper surfaces of the dielectric spacers.

16 . The construction of claim 15 wherein the second conductive structures are conductive interconnects having wide upper regions over narrow lower regions; wherein an insulative material is between the narrow lower regions of the conductive interconnects; and wherein the air gap/spacer insulative structures are over the insulative material and between the wide upper regions of the interconnects.

17 . The construction of claim 16 wherein the insulative material comprises one or both of silicon dioxide and silicon nitride.

18 . The construction of claim 15 wherein the second conductive structures are conductive interconnects having wide upper regions over narrow lower regions; wherein the air gap/spacer insulative structures are second insulative structures, and the dielectric spacers are second dielectric spacers; wherein first insulative structures are between the narrow lower regions of the conductive interconnects; the first insulative structures comprising first dielectric spacers along sidewalls of the second conductive structures; and wherein the second insulative structures are over the first insulative structures and between the wide upper regions of the interconnects.

19 . The construction of claim 18 wherein the second dielectric spacers are different compositions than the first dielectric spacers.

20 . The construction of claim 19 wherein the first dielectric spacers comprise one or both of silicon nitride and silicon dioxide; and wherein the second dielectric spacers comprise one or more of aluminum oxide, hafnium oxide, silicon oxide, zirconium oxide and silicon nitride.

21 . The construction of claim 19 wherein the first dielectric spacers comprise only a single homogenous material; and wherein the second dielectric spacers are laminates of two or more different materials.

22 . A construction, comprising:
a conductive line having an upper surface; a plurality of conductive interconnects electrically coupled with the upper surface of the conductive line and spaced from one another by intervening regions; the conductive interconnects having wide upper regions over narrow lower regions; first air gap/spacer insulative structures within the intervening regions between the narrow lower regions of the conductive interconnects, the first air gap/spacer insulative structures comprising first dielectric spacers along sidewalls of the conductive interconnects, and comprising air gaps between the first dielectric spacers; and second air gap/spacer insulative structures within the intervening regions between the wide upper regions of the conductive interconnects, the second air gap/spacer insulative structures comprising second dielectric spacers along sidewalls of the conductive interconnects, and comprising the air gaps between the second dielectric spacers.

23 . The construction of claim 22 wherein the conductive line comprises a different composition than the conductive interconnects.

24 . The construction of claim 23 wherein the conductive line comprises copper and the conductive interconnects comprise tungsten.

25 . The construction of claim 22 wherein the first dielectric spacers comprise a different composition than the second dielectric spacers.

26 . The construction of claim 25 wherein the first dielectric spacers comprise one or both of silicon nitride and silicon dioxide; and wherein the second dielectric spacers comprise one or more of aluminum oxide, hafnium oxide, silicon oxide, zirconium oxide and silicon nitride.

27 . The construction of claim 25 wherein the first dielectric spacers are a single homogenous material; and wherein the second dielectric spacers are a laminate of two or more different materials.

28 . The construction of claim 25 wherein the first dielectric spacers are wider than the second dielectric spacers.

29 . The construction of claim 28 wherein the first air gaps are narrower than the second air gaps.

Assignees

• Micron Technology Inc

Inventors

• Dutta Ashim
• Akhtar Mohd Kamran
• Trapp Shane J

Classifications

• H10W20/0886

  involving forming a via in a via-level dielectric prior to deposition of a trench-level dielectric · CPC title

• H10W20/077

  on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence) · CPC title

• H10W20/074

  of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers · CPC title

• H10W20/495

  Capacitive arrangements or effects of, or between wiring layers · CPC title

• H10W20/483

  Interconnections over air gaps, e.g. air bridges · CPC title