Showerhead having a detachable high resistivity gas distribution plate

Patent metadata

Field	Value
Publication number	US-2016005571-A1
Application number	US-201514729736-A
Country	US
Kind code	A1
Filing date	Jun 3, 2015
Priority date	Jul 3, 2014
Publication date	Jan 7, 2016
Grant date	—

Abstract

Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate.

First claim

1 . A showerhead for use in a semiconductor processing chamber, comprising:
a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate.

2 . The showerhead of claim 1 , wherein the thermal gasket comprises a plurality of concentric rings disposed between the base and the gas distribution plate.

3 . The showerhead of claim 1 , further comprising:
an yttrium fluoride coating on the second side of the base.

4 . The showerhead of claim 1 , further comprising:
one or more pins pressed into the second side of the base and disposed in the gap to maintain a thickness of the gap when the gas distribution plate deflects toward the base.

5 . The showerhead of claim 4 , wherein each of the one or more pins includes a through-hole to allow a volume behind each pin to be evacuated.

6 . The showerhead of claim 1 , wherein the base comprises a plurality of through holes extending from the first side to the second side of the base.

7 . The showerhead of claim 6 , wherein the base comprises a plenum formed in the first side of the base, the plenum fluidly coupled to the plurality of through holes.

8 . The showerhead of claim 1 , wherein the gas distribution plate is fabricated from single crystalline silicon (Si).

9 . The showerhead of claim 8 , wherein the gas distribution plate is fabricated from single crystalline silicon (Si) that is doped or coated with a high resistivity material.

10 . The showerhead of claim 8 , wherein the gas distribution plate is fabricated from single crystalline silicon (Si) that is doped or coated with boron.

11 . A process chamber, comprising:
a chamber body having a substrate support disposed within an inner volume of the chamber body; and a showerhead disposed within the inner volume of the chamber body opposite the substrate support, the showerhead comprising:
a base having a first side and a second side opposing the first side, wherein the first side of the base is coupled to a component of the process chamber;
a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm;
a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and
a thermal gasket disposed in a gap between the base and gas distribution plate.

12 . The process chamber of claim 11 , wherein the component of the process chamber is a chiller plate, and wherein the chiller plate is coupled to a ceiling of the chamber body.

13 . The process chamber of claim 11 , wherein the thermal gasket comprises a plurality of concentric rings disposed between the base and the gas distribution plate.

14 . The process chamber of claim 11 , further comprising a radio frequency (RF) power source that operates at a power greater than or equal to 2000 Watts and a frequency of 162 MHz.

15 . The process chamber of claim 11 , further comprising:
a plurality of pins pressed into the second side of the base and disposed in the gap to maintain a thickness of the gap when the gas distribution plate deflects toward the base.

16 . The process chamber of claim 15 , wherein each of the plurality of pins includes a through-hole to allow a volume behind each pin to be evacuated.

17 . The process chamber of claim 11 , wherein the gas distribution plate is fabricated from single crystalline silicon (Si).

18 . The process chamber of claim 11 , wherein the gas distribution plate is fabricated from single crystalline silicon (Si) that is doped or coated with a high resistivity material.

19 . The process chamber of claim 11 , wherein the gas distribution plate is fabricated from single crystalline silicon (Si) that is doped or coated with boron.

20 . A showerhead for use in a semiconductor processing chamber, comprising:
a base having a first side and a second side opposing the first side, the second side including an yttrium fluoride coating; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; an anodized clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; a plurality of silicone thermal gaskets disposed in a gap between the base and gas distribution plate; and a plurality of pins pressed into the second side of the base and disposed in the gap to maintain a thickness of the gap when the gas distribution plate deflects toward the base.

Assignees

• Applied Materials Inc

Inventors

• Della Rosa Jason
• Noorbakhsh Hamid
• Knyazik Vladimir
• Kim Jisoo
• Lee Wonseok
• Dadu Usama

Classifications

• H10P72/70

  for supporting or gripping · CPC title

• H10P72/76

  using mechanical means, e.g. clamps or pinches · CPC title

• H10P72/0448 Primary

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H01J37/3288

  Maintenance · CPC title

• H01J37/3244 Primary

  Gas supply means · CPC title