Resist patterning method, latent resist image forming device, resist patterning device, and resist material

Patent metadata

Field	Value
Publication number	US-2016004160-A1
Application number	US-201414769410-A
Country	US
Kind code	A1
Filing date	Feb 20, 2014
Priority date	Feb 20, 2013
Publication date	Jan 7, 2016
Grant date	—

Abstract

A resist patterning method according to the present invention includes: a resist layer forming step S 101 of forming a resist layer 12 on a substrate 11 ; an activating step S 103 of activating the resist layer by irradiation with an activating energy beam; a decay inhibiting step S 105 of inhibiting decay of the activity of the resist layer; a latent pattern image forming step S 107 of forming a latent pattern image in the activated resist layer by irradiation with a latent image forming energy beam; and a developing step S 110 of developing the resist layer.

First claim

1 - 15 . (canceled)

16 . A resist patterning method comprising:
forming a resist layer on a substrate, the resist layer including a resist composition containing a sensitizer precursor; irradiating the resist layer with an activating energy beam to produce a sensitizer from the sensitizer precursor; forming a latent pattern image in the resist layer by irradiating the resist layer containing the produced sensitizer with a latent image forming energy beam; and developing the resist layer having the latent pattern image formed therein.

17 . The resist patterning method of claim 16 , wherein
the irradiation with the latent image forming energy beam does not produce the sensitizer unless preceded by the irradiation with the activating energy beam.

18 . The resist patterning method of claim 16 , wherein
in the forming a resist layer, the sensitizer precursor includes at least one selected from the group consisting of bis(4-methoxyphenyl)methanol (DOMeBzH), a dimethoxy benzhydrol derivative (DOBzMM), and trimethoxy benzhydrol (TriOMeBzH).

19 . The resist patterning method of claim 16 , wherein
in the forming a latent pattern image, the latent image forming energy beam has a longer wavelength than the activating energy beam.

20 . The resist patterning method of claim 16 , wherein
in the irradiating the resist layer with an activating energy beam, the activating energy beam is electromagnetic waves including ultraviolet, deep ultraviolet, extreme ultraviolet, or X-rays, or an electron beam, or an ion beam, and in the forming a latent pattern image, the latent image forming energy beam is visible light or ultraviolet light.

21 . The resist patterning method of claim 16 , wherein
in the irradiating the resist layer with an activating energy beam, the irradiation with the activating energy beam produces an acid and the sensitizer.

22 . The resist patterning method of claim 16 , wherein
in the irradiating the resist layer with an activating energy beam, the irradiation with the activating energy beam produces the sensitizer without producing an acid.

23 . The resist patterning method of claim 16 , wherein
in the forming a latent pattern image, the irradiation with the latent image forming energy beam produces an acid.

24 . The resist patterning method of claim 16 , wherein
in the forming a latent pattern image, the irradiation with the latent image forming energy beam produces an acid and the sensitizer.

25 . The resist patterning method of claim 16 , wherein
in the forming a latent pattern image, the irradiation with the latent image forming energy beam produces an acid without producing the sensitizer.

26 . The resist patterning method of claim 16 , wherein
the irradiating the resist layer with an activating energy beam includes producing an active species in the resist layer, and the resist patterning method further includes inhibiting decay of the active species produced in the resist layer.

27 . The resist patterning method of claim 16 , wherein
in the forming a latent pattern image, a latent pattern image is formed in the resist layer by irradiation with the latent image forming energy beam in presence of an active species produced in the resist layer.

28 . The resist patterning method of claim 16 , wherein
in the irradiating the resist layer with an activating energy beam, the sensitizer precursor functions as an acid generator.

29 . The resist patterning method of claim 16 , wherein
the sensitizer precursor functions as an acid generator, the irradiation of the resist composition with the activating energy beam produces an electron, and the sensitizer precursor reacts with the electron produced to produce the sensitizer and an acid.

30 . The resist patterning method of claim 16 , wherein
the resist composition further contains an acid generator, the irradiation of the resist composition with the activating energy beam produces an electron, the acid generator reacts with the electron produced to produce a radical, and the radical produced reacts with the sensitizer precursor to produce the sensitizer.

31 . The resist patterning method of claim 16 , wherein
the resist composition further contains an acid generator, the irradiation of the resist composition with the activating energy beam produces an acid from the acid generator, and the acid produced reacts with the sensitizer precursor to produce the sensitizer.

Assignees

• Univ Osaka

Inventors

• Tagawa Seiichi
• Oshima Akihiro

Classifications

• G03F7/38 Primary

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title

• G03F7/203

  comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation · CPC title

• G03F7/2032

  Simultaneous exposure of the front side and the backside · CPC title

• G03F7/2059

  using a scanning corpuscular radiation beam, e.g. an electron beam · CPC title