Carousel batch epitaxy system

Patent metadata

Field	Value
Publication number	US-2016002821-A1
Application number	US-201514735189-A
Country	US
Kind code	A1
Filing date	Jun 10, 2015
Priority date	Jul 3, 2014
Publication date	Jan 7, 2016
Grant date	—

Abstract

Embodiments relate to methods and apparatus for batch processing of substrates during epitaxial film formation. In one example, a process chamber includes a chamber lid and substrate support. The chamber lid includes a centrally disposed gas inlet and a first gas deflector coupled to the chamber lid and adapted to direct the first process gas laterally across surfaces of a plurality of substrates. The lid also includes one or more gas outlets disposed radially outward of the centrally disposed gas inlet, and a plurality of lamps disposed between the centrally disposed gas inlet and the one or more gas outlets. The substrate support is rotatable and includes both a gas passage formed therein for introducing a second process gas to the internal volume of the process chamber and a second gas deflector adapted to direct the second process gas laterally across the surfaces of the plurality of substrates.

First claim

What is claimed is:

1 . A process chamber, comprising:
a chamber lid having:
a centrally disposed gas inlet adapted to introduce a first process gas to an internal volume of the process chamber;
one or more gas outlets disposed radially outward of the centrally disposed gas inlet; and
a first gas deflector positioned to direct the first process gas laterally across surfaces of a plurality of substrates;
a plurality of lamps disposed within the chamber lid, the plurality of lamps positioned between the centrally disposed gas inlet and the one or more gas outlets; and a rotatable substrate support disposed within the process chamber, the rotatable substrate support adapted to support the plurality of substrates thereon, the rotatable substrate support including:
a gas passage formed therein for introducing a second process gas to the internal volume of the process chamber; and
a second gas deflector positioned to direct the second process gas laterally across the surface of the plurality of substrate.

2 . The process chamber of claim 1 , wherein the rotatable substrate support comprises one or more exhaust plenums formed therein.

3 . The process chamber of claim 2 , further comprising one or more gas deflectors positioned adjacent each of the one or more exhaust plenums.

4 . The process chamber of claim 3 , wherein each gas deflector is positioned at angle of about 45 degrees to about 135 degrees with respect to an upper surface of the rotatable substrate support.

5 . The process chamber of claim 1 , further comprising a rotatable gas seal disposed between the gas passage formed in the rotatable substrate support and a support shaft of the rotatable substrate support.

6 . The process chamber of claim 1 , further comprising an actuator coupled to the rotatable substrate support to vertically actuate the rotatable substrate support.

7 . The process chamber of claim 1 , wherein the rotatable substrate support includes a recess formed centrally in an upper surface thereof, and wherein a plate having a plurality of openings formed therethrough is disposed within the recess.

8 . The process chamber of claim 7 , wherein the first gas deflector comprises a support post centrally coupled to a gas deflection member.

9 . The process chamber of claim 8 , wherein the support post is coupled to the plate.

10 . The process chamber of claim 1 , wherein the one or more gas outlets of the chamber lid is ring-shaped exhaust outlet.

11 . A process chamber, comprising:
a chamber body; a chamber lid disposed on the chamber body, the chamber lid including:
a centrally disposed gas inlet for introducing a first process gas to an internal volume of the process chamber;
a first gas deflector coupled to the chamber lid for directing the first process gas laterally across surfaces of a plurality of substrates;
one or more gas outlets disposed radially outward of the centrally disposed gas inlet; and
a plurality of lamps disposed within the chamber lid; and
a rotatable substrate support disposed within the process chamber, the rotatable substrate support adapted to support the plurality of substrates thereon, the rotatable substrate support including:
a second gas deflector positioned to direct the second process gas laterally across the surface of the plurality of substrate.

12 . The process chamber of claim 11 , wherein the plurality of lamps is coupled to the chamber lid between the centrally disposed gas inlet and the one or more gas outlets.

13 . The process chamber of claim 11 , wherein the rotatable substrate support comprises a gas passage formed therein for introducing a second process gas to the internal volume of the process chamber.

14 . The process chamber of claim 11 , wherein the rotatable substrate support comprises one or more exhaust plenums formed in an upper surface thereof.

15 . The process chamber of claim 14 , wherein the one or more exhaust plenums are disposed radially outward of the plurality of substrates.

16 . The process chamber of claim 15 , further comprising a heater disposed in a lower portion of the chamber body.

17 . A method of processing a plurality of substrates, comprising:
introducing process gas through a gas inlet formed in a chamber lid, the chamber lid positioned on a chamber body; deflecting the process gas laterally across the surfaces of one or more substrates; introducing additional process gas through a gas inlet formed in a substrate support; deflecting the additional process gas laterally across the surfaces of the one or more substrates; and exhausting the process gas and the additional process gas from the chamber body.

18 . The method of claim 17 , wherein the process gas and the additional process gas are exhausted from the chamber through one or more exhaust plenums formed in the chamber lid.

19 . The method of claim 17 , wherein the process gas and the additional process gas are exhausted from the chamber through one or more exhaust plenums formed in the chamber lid and through one or more exhaust plenums formed in the substrate support.

20 . The method of claim 17 , wherein the substrate support is rotatable.

Assignees

• Applied Materials Inc

Inventors

• Newman Jacob

Classifications

• C30B25/12

  Substrate holders or susceptors · CPC title

• C30B25/14 Primary

  Feed and outlet means for the gases; Modifying the flow of the reactive gases · CPC title

• C30B25/105

  by irradiation or electric discharge · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P14/20 Primary

  of semiconductor materials · CPC title