Electrostatic charge removal for solar cell grippers
US-9202734-B2 · Dec 1, 2015 · US
US2016002779A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016002779-A1 |
| Application number | US-201514738610-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 12, 2015 |
| Priority date | Jul 2, 2014 |
| Publication date | Jan 7, 2016 |
| Grant date | — |
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A method and apparatus for a heated pedestal is provided. In one embodiment, the heated pedestal includes a body comprising a ceramic material, a plurality of heating elements encapsulated within the body, and one or more grooves formed in a surface of the body adjacent each of the plurality of heating elements, at least one side of the grooves being bounded by a ceramic plate.
Opening claim text (preview).
What is claimed is: 1 . A pedestal for a semiconductor processing chamber, comprising: a body comprising a ceramic material, wherein one or more grooves are formed in one or more surfaces of the body; a ceramic plate bounding at least one side of the grooves; and a plurality of heater elements encapsulated within the body. 2 . The pedestal of claim 1 , further comprising: a hollow shaft comprising a ceramic material coupled to the body; and a dielectric insert having a plurality of channels formed therein disposed in the hollow shaft. 3 . The pedestal of claim 2 , wherein at least a portion of the channels in the dielectric insert comprise a curved portion having an end terminating at an end of at least one of the grooves formed in a surface of the body. 4 . The pedestal of claim 2 , further comprising multiple terminals disposed inside the dielectric insert. 5 . The pedestal of claim of claim 4 , wherein the terminals are symmetrically distributed with a center terminal connected to a metallic RF mesh. 6 . The pedestal of claim of 5 , wherein the center terminal is connected to ground, an RF generator, a tunable capacitor, or combinations thereof. 7 . The pedestal of claim 1 , wherein the plurality of heater elements comprises three to four heating elements. 8 . The pedestal of claim 7 , wherein the heater elements are concentric. 9 . The pedestal of claim 7 , wherein the heater elements are in a pie shape. 10 . The pedestal of claim 7 , wherein the heater elements are in different layers inside the ceramic body. 11 . The pedestal of claim 7 , wherein the heater elements are separated by thermal void formed in the body. 12 . A pedestal for a semiconductor processing chamber, comprising: a body comprising a ceramic material, wherein one or more grooves are formed a major surface of the body; a ceramic plate coupled to the major surface and bounding at least one side of the grooves; a plurality of heater elements encapsulated within the body; a hollow shaft comprising a ceramic material coupled to the body; and a dielectric insert having a plurality of channels formed therein disposed in the hollow shaft. 13 . The pedestal of claim 12 , wherein at least a portion of the channels in the dielectric insert comprise a curved portion having an end terminating at an end of at least one of the grooves formed in the body. 14 . The pedestal of claim 12 , wherein the plurality of heater elements comprises three to four heating elements. 15 . The pedestal of claim 14 , wherein the heater elements are concentric. 16 . The pedestal of claim 14 , wherein the heater elements are in a pie shape. 17 . The pedestal of claim 14 , wherein the heater elements are in different layers inside the ceramic body. 18 . The pedestal of claim 14 , wherein the heater elements are separated by thermal void formed in the body. 19 . A pedestal for a semiconductor processing chamber, comprising: a body comprising a ceramic material, wherein one or more grooves are formed a major surface of the body; a ceramic plate coupled to the major surface and bounding at least one side of the grooves; a plurality of heater elements encapsulated within the body; a hollow shaft comprising a ceramic material coupled to the body; and a dielectric insert having a plurality of channels formed therein disposed in the hollow shaft, wherein at least a portion of the channels in the dielectric insert comprise a curved portion having an end terminating at an end of at least one of the grooves formed in the body. 20 . The pedestal of claim 19 , further comprising multiple terminals disposed inside the dielectric insert.
characterised by the construction of the shaft · CPC title
mainly by convection · CPC title
mainly by conduction · CPC title
using mechanical means, e.g. clamps or pinches · CPC title
Temperature · CPC title
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