Multi-zone pedestal for plasma processing

US2016002779A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016002779-A1
Application numberUS-201514738610-A
CountryUS
Kind codeA1
Filing dateJun 12, 2015
Priority dateJul 2, 2014
Publication dateJan 7, 2016
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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A method and apparatus for a heated pedestal is provided. In one embodiment, the heated pedestal includes a body comprising a ceramic material, a plurality of heating elements encapsulated within the body, and one or more grooves formed in a surface of the body adjacent each of the plurality of heating elements, at least one side of the grooves being bounded by a ceramic plate.

First claim

Opening claim text (preview).

What is claimed is: 1 . A pedestal for a semiconductor processing chamber, comprising: a body comprising a ceramic material, wherein one or more grooves are formed in one or more surfaces of the body; a ceramic plate bounding at least one side of the grooves; and a plurality of heater elements encapsulated within the body. 2 . The pedestal of claim 1 , further comprising: a hollow shaft comprising a ceramic material coupled to the body; and a dielectric insert having a plurality of channels formed therein disposed in the hollow shaft. 3 . The pedestal of claim 2 , wherein at least a portion of the channels in the dielectric insert comprise a curved portion having an end terminating at an end of at least one of the grooves formed in a surface of the body. 4 . The pedestal of claim 2 , further comprising multiple terminals disposed inside the dielectric insert. 5 . The pedestal of claim of claim 4 , wherein the terminals are symmetrically distributed with a center terminal connected to a metallic RF mesh. 6 . The pedestal of claim of 5 , wherein the center terminal is connected to ground, an RF generator, a tunable capacitor, or combinations thereof. 7 . The pedestal of claim 1 , wherein the plurality of heater elements comprises three to four heating elements. 8 . The pedestal of claim 7 , wherein the heater elements are concentric. 9 . The pedestal of claim 7 , wherein the heater elements are in a pie shape. 10 . The pedestal of claim 7 , wherein the heater elements are in different layers inside the ceramic body. 11 . The pedestal of claim 7 , wherein the heater elements are separated by thermal void formed in the body. 12 . A pedestal for a semiconductor processing chamber, comprising: a body comprising a ceramic material, wherein one or more grooves are formed a major surface of the body; a ceramic plate coupled to the major surface and bounding at least one side of the grooves; a plurality of heater elements encapsulated within the body; a hollow shaft comprising a ceramic material coupled to the body; and a dielectric insert having a plurality of channels formed therein disposed in the hollow shaft. 13 . The pedestal of claim 12 , wherein at least a portion of the channels in the dielectric insert comprise a curved portion having an end terminating at an end of at least one of the grooves formed in the body. 14 . The pedestal of claim 12 , wherein the plurality of heater elements comprises three to four heating elements. 15 . The pedestal of claim 14 , wherein the heater elements are concentric. 16 . The pedestal of claim 14 , wherein the heater elements are in a pie shape. 17 . The pedestal of claim 14 , wherein the heater elements are in different layers inside the ceramic body. 18 . The pedestal of claim 14 , wherein the heater elements are separated by thermal void formed in the body. 19 . A pedestal for a semiconductor processing chamber, comprising: a body comprising a ceramic material, wherein one or more grooves are formed a major surface of the body; a ceramic plate coupled to the major surface and bounding at least one side of the grooves; a plurality of heater elements encapsulated within the body; a hollow shaft comprising a ceramic material coupled to the body; and a dielectric insert having a plurality of channels formed therein disposed in the hollow shaft, wherein at least a portion of the channels in the dielectric insert comprise a curved portion having an end terminating at an end of at least one of the grooves formed in the body. 20 . The pedestal of claim 19 , further comprising multiple terminals disposed inside the dielectric insert.

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What does patent US2016002779A1 cover?
A method and apparatus for a heated pedestal is provided. In one embodiment, the heated pedestal includes a body comprising a ceramic material, a plurality of heating elements encapsulated within the body, and one or more grooves formed in a surface of the body adjacent each of the plurality of heating elements, at least one side of the grooves being bounded by a ceramic plate.
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification H10P72/76. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Jan 07 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).