Stacked ic control through the use of homogenous region

Patent metadata

Field	Value
Publication number	US-2015380385-A1
Application number	US-201414316125-A
Country	US
Kind code	A1
Filing date	Jun 26, 2014
Priority date	Jun 26, 2014
Publication date	Dec 31, 2015
Grant date	—

Abstract

A package includes a semiconductor chip. The semiconductor chip includes a substrate, a plurality of dielectric layers underlying the substrate, a dielectric region penetrating through the plurality of dielectric layers, and a metal pad overlapped by the dielectric region. A conductive plug penetrates through the substrate, the dielectric region, and the metal pad.

First claim

1 . A package comprising:
a first semiconductor chip including:
a first substrate;
a first plurality of dielectric layers underlying the first substrate;
a dielectric region penetrating through the first plurality of dielectric layers; and
a first metal pad overlapped by the dielectric region; and
a conductive plug penetrating through the first substrate, the dielectric region, and the first metal pad.

2 . (canceled)

3 . The package of c…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Hsu Wen-I
• Ho Cheng-Ying
• Lin Jeng-Shyan
• Hung Feng-Chi
• Yaung Dun-Nian

Classifications

• H10P50/642

  Electricity · mapped topic

• H10W99/00

  Electricity · mapped topic

• H10W90/792

  Electricity · mapped topic

• H10W90/297

  Electricity · mapped topic

• H10W90/22

  Electricity · mapped topic