Quantum dot and light emitting device including the same

Patent metadata

Field	Value
Publication number	US-12593536-B2
Application number	US-202318244661-A
Country	US
Kind code	B2
Filing date	Sep 11, 2023
Priority date	Sep 20, 2022
Publication date	Mar 31, 2026
Grant date	Mar 31, 2026

Abstract

A quantum dot of a light emitting device, includes: a core; and a shell around the core and including halogen elements of at least one type, wherein a first number per unit volume of halogen elements in a first area of the shell, that includes an outer surface of the shell, is larger than a second number per unit volume of halogen elements in a second area of the shell other than the outer surface of the shell.

First claim

What is claimed is:

1 . A quantum dot of a light emitting device, the quantum dot comprising:
a core; and a shell around the core and comprising halogen elements of at least one type, wherein a first number per unit volume of halogen elements in a first area of the shell, that includes an outer surface of the shell, is larger than a second number per unit volume of halogen elements in a second area of the shell other than the outer surface of the shell.

2 . The quantum dot as claimed in claim 1 , wherein the halogen elements in the first area of the shell comprise halogen elements of two or more types, and the halogen elements in the second area of the shell comprise halogen elements of one type.

3 . The quantum dot as claimed in claim 1 , wherein the halogen elements comprise at least one of fluorine, chlorine, bromine, or iodine, and
wherein the halogen elements are in a doped state or a metal halide state inside the shell or on the outer surface of the shell.

4 . The quantum dot as claimed in claim 1 , wherein the shell comprises a plurality of monolayers stacked on each other, and
wherein the outer surface of the shell is an outermost monolayer of the plurality of monolayers.

5 . The quantum dot as claimed in claim 1 , wherein the shell comprises a plurality of monolayers stacked on each other, and
wherein a number of the plurality of monolayers is in a range from 8 to 20.

6 . The quantum dot as claimed in claim 1 , wherein the core comprises a Group III-V compound, and
wherein the Group III-V compound is at least one of:
a binary element compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof;
a ternary element compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, ANAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, and mixtures thereof; or
a quaternary element compound selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.

7 . The quantum dot as claimed in claim 1 , wherein the core comprises a Group II-VI compound, and
wherein the Group II-VI compound is at least one of:
a binary element compound selected from the group consisting of ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof;
a ternary element compound selected from the group consisting of ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; or
a quaternary element compound selected from the group consisting of HgZnTeS, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof.

8 . The quantum dot as claimed in claim 1 , wherein the quantum dot has a quantum yield of at least 70%.

9 . A display panel comprising:
a substrate; and a light emitting device provided on the substrate and comprising at least one quantum dot, wherein the at least one quantum dot comprises:
a core; and
a shell around the core and comprising halogen elements of at least one type, and
wherein a first number per unit volume of the halogen elements in a first area of the shell, that includes an outer surface of the shell, is larger than a second number per unit volume of the halogen elements in a second area of the shell other than the outer surface of the shell.

10 . The display panel as claimed in claim 9 , wherein the halogen elements in the first area of the shell comprise halogen elements of two or more types, and
wherein the halogen elements in the second area of the shell comprise halogen elements of one type.

11 . The display panel as claimed in claim 9 , wherein the halogen elements comprise at least one of fluorine, chlorine, bromine, or iodine, and
wherein the halogen elements are in a doped state or a metal halide state inside the shell or on the outer surface of the shell.

12 . The display panel as claimed in claim 9 , wherein the shell comprises a plurality of monolayers stacked on each other, and
wherein the outer surface of the shell is an outermost monolayer of the plurality of monolayers.

13 . The display panel as claimed in claim 9 , wherein the shell comprises a plurality of monolayers stacked on each other, and
wherein a number of the plurality of monolayers is in a range from 8 to 20.

14 . The display panel as claimed in claim 9 , wherein the core comprises a Group III-V compound, and
wherein the Group III-V compound is at least one of:
a binary element compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof;
a ternary element compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, ANAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, and mixtures thereof; or
a quaternary element compound selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.

15 . The display panel as claimed in claim 9 , wherein the core comprises a Group II-VI compound, and
wherein the Group II-VI compound is at least one of:
a binary element compound selected from the group consisting of ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof;
a ternary element compound selected from the group consisting of ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; or
a quaternary element compound selected from the group consisting of HgZnTeS, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof.

16 . The display panel as claimed in claim 9 , wherein the quantum dot has a quantum yield of at least 70%.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Daehee
• Won Yuho
• Yoon Wonsik
• Kim Taehyung

Classifications

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/823

  comprising only Group II-VI materials, e.g. ZnO · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• H10K50/115 Primary

  comprising active inorganic nanostructures, e.g. luminescent quantum dots · CPC title

• C09K11/883

  with zinc or cadmium · CPC title