Light-emitting film, production method thereof, and a light emitting device including the same

Patent metadata

Field	Value
Publication number	US-11050033-B2
Application number	US-201916391692-A
Country	US
Kind code	B2
Filing date	Apr 23, 2019
Priority date	Apr 24, 2018
Publication date	Jun 29, 2021
Grant date	Jun 29, 2021

Abstract

A light emitting film including a plurality of quantum dots and an electronic device including the same. The plurality of quantum dots constitute at least a portion of a surface of the light emitting film, the plurality of quantum dots do not include cadmium, and the at least a portion of a surface of the light emitting film includes a metal halide bound to at least one quantum dot of the plurality of quantum dots.

First claim

What is claimed is:

1. A light emitting film comprising a plurality of quantum dots,
wherein the plurality of quantum dots constitute at least a portion of a surface of the light emitting film,
wherein the plurality of quantum dots do not comprise cadmium and lead, and
wherein the plurality of quantum dots comprise a metal halide bound to a surface thereof.

2. The light emitting film of claim 1 , wherein at least one quantum dot of the plurality of quantum dots comprises
a core comprising a first semiconductor nanocrystal and
a shell disposed on the core, the shell comprising a second semiconductor nanocrystal, wherein the second semiconductor nanocrystal has a composition different from the first semiconductor nanocrystal.

3. The light emitting film of claim 2 , wherein
the first semiconductor nanocrystal and the second semiconductor nanocrystal are independently a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element or compound, a Group compound, a Group I-II-IV-VI compound, or a combination thereof.

4. The light emitting film of claim 1 , wherein at least one quantum dot of the plurality of quantum dots comprises indium, zinc, or a combination thereof.

5. The light emitting film of claim 1 , wherein at least one quantum dot of the plurality of quantum dots comprises InP, InZnP, ZnSe, ZnSeTe, or a combination thereof.

6. The light emitting film of claim 1 , wherein an outermost layer of at least one quantum dot of the plurality of quantum dots comprises zinc and sulfur.

7. The light emitting film of claim 1 , wherein the at least a portion of the surface of the light emitting film does not comprise an organic thiol compound.

8. The light emitting film of claim 1 , wherein the plurality of the quantum dots comprises a carboxylic acid compound at a surface thereof.

9. The light emitting film of claim 8 , wherein the carboxylic acid compound comprises a C6 to C30 carboxylic acid compound.

10. The light emitting film of claim 1 , wherein the metal halide comprises zinc, indium, magnesium, lithium, or a combination thereof.

11. The light emitting film of claim 1 , wherein the metal halide comprises a zinc chloride, a zinc bromide, a zinc iodide, an indium chloride, an indium bromide, an indium iodide, a gallium chloride, a gallium bromide, a gallium iodide, a magnesium chloride, a magnesium bromide, a magnesium iodide, a lithium chloride, a lithium bromide, a lithium iodide, or a combination thereof.

12. The light emitting film of claim 1 , wherein a thickness of the light emitting film is greater than or equal to about 15 nanometers.

13. A method of producing the light emitting film of claim 1 , which comprises:
disposing on a substrate a film comprising the plurality of quantum dots; and
treating the film with a solution comprising the metal halide in a first polar solvent to bind the metal halide to at least one quantum dot of the plurality of quantum dots.

14. The method of claim 13 , further comprising
washing the treated film with a second polar solvent that does not comprise a metal halide, and
heating the washed film to a temperature of greater than or equal to about 60° C.

15. The method of claim 13 , wherein the first polar solvent comprises a C1 to C10 alcohol.

16. A light emitting device, which comprises:
a first electrode and a second electrode facing each other, and
the light emitting film of claim 1 disposed between the first electrode and the second electrode.

17. The light emitting device of claim 16 , further comprising between the first electrode and the light emitting layer, a hole auxiliary layer comprising a hole injection layer, a hole transport layer, or a combination thereof.

18. The light emitting device of claim 16 , further comprising an electron auxiliary layer comprising an electron injection layer, an electron transport layer, or a combination thereof between the second electrode and the light emitting layer.

19. A display device comprising the light emitting device of claim 16 .

20. The light emitting film of claim 1 , wherein:
the plurality of quantum dots comprise ZnTeSe, ZnSeS, or a combination thereof; and
the metal halide comprises a zinc chloride.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Kwanghee
• Cho Oul
• Kim Chan Su
• Kim Tae Hyung
• Jang Eun Joo
• Han Moon Gyu

Classifications

• H10K50/115

  comprising active inorganic nanostructures, e.g. luminescent quantum dots · CPC title

• C09K11/883 Primary

  with zinc or cadmium · CPC title

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/823

  comprising only Group II-VI materials, e.g. ZnO · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title