Film forming method and film forming apparatus

Patent metadata

Field	Value
Publication number	US-12589410-B2
Application number	US-202017762363-A
Country	US
Kind code	B2
Filing date	Sep 15, 2020
Priority date	Sep 24, 2019
Publication date	Mar 31, 2026
Grant date	Mar 31, 2026

Abstract

A film forming method includes preparing a substrate having a first region in which a metal film or an oxide film of the metal film is exposed, and a second region in which an insulating film is exposed, supplying, to the substrate, an organic compound containing, in a head group, a triple bond between carbon atoms represented by Chemical Formula (1) described in the specification, causing the organic compound to be selectively adsorbed in the first region among the first region and the second region, and cleaving the triple bond in the first region and forming a hydrophobic film having a honeycomb structure of carbon atoms through polymerization.

First claim

What is claimed is:

1 . A film forming method comprising:
preparing a substrate having a first region in which a metal film or an oxide film of the metal film is exposed, and a second region in which an insulating film is exposed; supplying, to the substrate, an organic compound containing, in a head group, a triple bond between carbon atoms represented by Chemical Formula (1) below, while irradiating the substrate with light; causing the organic compound to be selectively adsorbed in the first region among the first region and the second region; and cyclotrimerizing the organic compounds with the light to form a hydrophobic film having a honeycomb structure of carbon atoms in the first region,
H—C≡C—R  (1)

wherein, in Chemical Formula (1), R is a hydrophobic functional group containing 1 or more and 16 or less carbon atoms.

2 . The film forming method of claim 1 , further comprising:
removing the oxide film exposed in the first region before the supplying the organic compound to the substrate.

3 . The film forming method of claim 2 , further comprising:
supplying hydrogen (H 2 ) gas to the substrate before or during the supplying the organic compound to the substrate.

4 . The film forming method of claim 3 , further comprising:
supplying an acetylene (C 2 H 2 ) gas to the substrate before or during the supplying the organic compound to the substrate.

5 . The film forming method of claim 4 , wherein the metal film is a copper film.

6 . The film forming method of claim 5 , wherein the insulating film is an aluminum oxide film.

7 . The film forming method of claim 6 , further comprising:
selectively forming a second insulating film in the second region among the first region and the second region using the hydrophobic film to inhibit formation of the second insulating film in the first region.

8 . The film forming method of claim 1 , further comprising:
supplying hydrogen (H 2 ) gas to the substrate before or during the supplying the organic compound to the substrate.

9 . The film forming method of claim 1 , further comprising:
supplying an acetylene (C 2 H 2 ) gas to the substrate before or during the supplying the organic compound to the substrate.

10 . The film forming method of claim 1 , wherein the metal film is a copper film.

11 . The film forming method of claim 1 , wherein the insulating film is an aluminum oxide film.

12 . The film forming method of claim 1 , further comprising:
selectively forming a second insulating film in the second region among the first region and the second region using the hydrophobic film to inhibit formation of the second insulating film in the first region.

Assignees

• Tokyo Electron Ltd

Inventors

• Ni Zeyuan
• Kato Taiki

Classifications

• B05D2401/40

  where the carrier is not clearly specified · CPC title

• B05D2202/45

  based on Cu · CPC title

• B05D3/102

  Pretreatment of metallic substrates (C23C takes precedence) · CPC title

• B05D3/067

  Curing or cross-linking the coating · CPC title

• B05D3/044

  Pretreatment · CPC title