Surface treatment composition and method for producing wafer

Patent metadata

Field	Value
Publication number	US-12588446-B2
Application number	US-202218254346-A
Country	US
Kind code	B2
Filing date	Feb 21, 2022
Priority date	Feb 26, 2021
Publication date	Mar 24, 2026
Grant date	Mar 24, 2026

Abstract

A surface treatment composition of the present invention is a surface treatment composition that are supplied as a vapor to a surface of a wafer having an uneven pattern on the surface and used to form a water-repellent protective film on the surface, the surface treatment composition containing a silylating agent and a solvent, in which the silylating agent contains a trialkylsilylamine, the solvent contains at least one or more selected from the group consisting of glycol ether acetate and glycol acetate, and a total content of the glycol ether acetate and the glycol acetate is 50% by mass or more in 100% by mass of a total amount of the solvent.

First claim

The invention claimed is:

1 . A surface treatment composition that are supplied as a vapor to a surface of a wafer having an uneven pattern on the surface and used to form a water-repellent protective film on the surface, the surface treatment composition comprising:
a silylating agent; and a solvent, wherein the silylating agent contains a trialkylsilylamine, the solvent contains at least one or more selected from the group consisting of glycol ether acetate and glycol acetate, and a total content of the glycol ether acetate and the glycol acetate is 50% by mass or more in 100% by mass of a total amount of the solvent.

2 . The surface treatment composition according to claim 1 ,
wherein a content of the silylating agent is 0.3% by mass or more and 30% by mass or less in 100% by mass of the surface treatment composition.

3 . The surface treatment composition according to claim 1 ,
wherein a total content of the glycol ether acetate and the glycol acetate is 50% by mass or more in 100% by mass of the surface treatment composition.

4 . The surface treatment composition according to claim 1 ,
wherein a boiling point difference between a boiling point of the solvent and a boiling point of the silylating agent at 1 atm (the boiling point of the solvent−the boiling point of the silylating agent) is 20° C. or more.

5 . The surface treatment composition according to any one of claims claim 1 ,
wherein the trialkylsilylamine includes one or more selected from the group consisting of trimethylsilyldimethylamine, trimethylsilyldiethylamine, and N-(trimethylsilyl)-tertiary-butylamine.

6 . The surface treatment composition according to any one of claims claim 1 ,
wherein a water contact angle on a silicon wafer surface after a surface treatment, which is measured by the following procedure, is 70° or more, (the procedure) a silicon wafer having a thermal oxide film layer over a surface is immersed in 1% by mass of hydrofluoric acid at 25° C. for 10 minutes and cleaned by being immersed in pure water at 25° C. for 1 minute and in 2-propanol (iPA) at 25° C. for 1 minute, the cleaned silicon wafer is disposed horizontally in a state in which a puddle of iPA is formed on the silicon wafer, and a vapor of the surface treatment composition is supplied to the silicon wafer, subsequently, a state of the vapor is changed, on the surface of the silicon wafer, to a liquid to replace iPA held on the surface with the liquid, subsequently, the silicon wafer is immersed in iPA at 25° C. for 1 minute, then, an air is blown to the silicon wafer to remove iPA on the surface, and the water contact angle on the surface of the silicon wafer obtained by the above-described steps is measured in accordance with JIS R 3257:1999 “Testing method of wettability of substrate glass surface” using approximately 2 μl of pure water.

7 . The surface treatment composition according to claim 1 ,
wherein the surface treatment composition does not contain a fluorine-based solvent, an acyclic carbonate ester and/or a catalyst.

8 . The surface treatment composition according to claim 1 ,
wherein the number of particles larger than 0.2 μm, which is measured using a light scattering liquid borne particle detector, is 1.0×10 4 or less per 1 mL of the surface treatment composition.

9 . The surface treatment composition according to claim 1 ,
wherein a total content of Na, Mg, Ca, Mn, Fe, Cu, Li, Al, Cr, Ni, Zn, and Ag, which is measured using inductively coupled plasma mass spectrometry, is 100 mass ppb or less in the surface treatment composition.

10 . A method for producing a wafer, comprising:
a step of preparing a wafer having an uneven pattern on a surface; a step of cleaning the surface of the wafer by supplying a cleaning liquid; and a step of supplying a vapor of a surface treatment composition to the surface on which the cleaning liquid is held, changing, on the surface, a state of the vapor to a liquid to replace the cleaning liquid with the liquid, and forming a water-repellent protective film on at least a part of the surface, wherein the surface treatment composition
contains a silylating agent and a solvent,
the silylating agent contains a trialkylsilylamine,
the solvent contains at least one or more selected from the group consisting of glycol ether acetate and glycol acetate, and
a total content of the glycol ether acetate and the glycol acetate is 50% by mass or more in 100% by mass of a total amount of the solvent.

11 . The method for producing a wafer according to claim 10 ,
wherein, in the surface treatment composition, a content of the silylating agent is 0.3% by mass or more and 30% by mass or less in 100% by mass of the surface treatment composition.

12 . The method for producing a wafer according to claim 10 ,
wherein, in the surface treatment composition, a total content of the glycol ether acetate and the glycol acetate is 50% by mass or more in 100% by mass of the surface treatment composition.

13 . The method for producing a wafer according to claim 10 ,
wherein, in the surface treatment composition, a boiling point difference between a boiling point of the solvent and a boiling point of the silylating agent at 1 atm (the boiling point of the solvent−the boiling point of the silylating agent) is 20° C. or more.

14 . The method for producing a wafer according to claim 10 ,
wherein, in the surface treatment composition, the trialkylsilylamine includes one or more selected from the group consisting of trimethylsilyldimethylamine, trimethylsilyldiethylamine, and N-(trimethylsilyl)-tertiary-butylamine.

15 . The method for producing a wafer according to claim 10 ,
wherein the surface treatment composition does not contain a fluorine-based solvent, an acyclic carbonate ester and/or a catalyst.

16 . The method for producing a wafer according to claim 10 ,
wherein, in the surface treatment composition, the number of particles larger than 0.2 μm, which is measured using a light scattering liquid borne particle detector, is 1.0×10 4 or less per 1 mL of the surface treatment composition.

17 . The method for producing a wafer according to claim 10 ,
wherein, in the surface treatment composition, a total content of Na, Mg, Ca, Mn, Fe, Cu, Li, Al, Cr, Ni, Zn, and Ag, which is measured using inductively coupled plasma mass spectrometry, is 100 mass ppb or less in the treatment composition.

18 . The method for producing a wafer according to claim 10 ,
wherein the vapor of the surface treatment composition is supplied in a state in which IPA is held on the surface of the wafer.

19 . The method for producing a wafer according to claim 10 , further comprising:
a step of preparing the surface treatment composition using a raw material having 2,000 mass ppm or less of a total amount of moisture in the raw material with respect to a total amount of the raw material.

Assignees

• Central Glass Co Ltd

Inventors

• Terui Yoshiharu
• Okumura Yuzo
• Kumon Soichi

Classifications

• C23C16/56

  After-treatment · CPC title

• C23C16/44

  characterised by the method of coating (C23C16/04 takes precedence) · CPC title

• C23C16/0227

  by cleaning or etching · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title