Array substrate and method for making same
US-10319752-B2 · Jun 11, 2019 · US
Circuit substrate
US12588287B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12588287-B2 |
| Application number | US-202217985957-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 14, 2022 |
| Priority date | Apr 1, 2016 |
| Publication date | Mar 24, 2026 |
| Grant date | Mar 24, 2026 |
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- Title
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Abstract
Official abstract text for this publication.
Provided is a display device including: a capacitor having a first electrode, a first insulating film over the first electrode, and a second electrode over the first insulating film; and a first transistor over the capacitor. The first transistor includes the second electrode, a second insulating film over the second electrode, an oxide semiconductor film over the second insulating film, and a first source electrode and a first drain electrode over the oxide semiconductor film. The first source electrode and the first drain electrode are electrically connected to the oxide semiconductor film.
First claim
Opening claim text (preview).
What is claimed is: 1 . A circuit substrate comprising: a first transistor comprising: a first gate electrode; a first insulating film over the first gate electrode; an oxide semiconductor film over the first insulating film; and a first metal and a second metal over the oxide semiconductor film, the first metal and the second metal being electrically connected to the oxide semiconductor film; a second transistor comprising: a semiconductor film including silicon; a second insulating film over the semiconductor film and under the first gate electrode; a second gate electrode over the second insulating film; and a third metal and a fourth metal electrically connected to the semiconductor film; and an interlayer film located over the first metal and the second metal, wherein the interlayer film is sandwiched between the third metal and the second insulating film and between the fourth metal and the second insulating film, and wherein a conductive layer is disposed under the second insulating film and overlaps the first gate electrode in a plane view. 2 . The circuit substrate according to claim 1 , wherein a capacitor is formed by the conductive layer, the first gate electrode, and the second insulating film. 3 . The circuit substrate according to claim 1 , wherein the conductive layer includes silicon. 4 . The circuit substrate according to claim 1 , wherein an area of the oxide semiconductor film is smaller than an area of the first gate electrode.
Assignees
Inventors
Classifications
Polycrystalline or microcrystalline silicon · CPC title
Top-gate only TFTs · CPC title
Interconnections, e.g. scanning lines · CPC title
comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title
characterised by multiple passive components, e.g. resistors, capacitors or inductors · CPC title
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Frequently asked questions
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- What does patent US12588287B2 cover?
- Provided is a display device including: a capacitor having a first electrode, a first insulating film over the first electrode, and a second electrode over the first insulating film; and a first transistor over the capacitor. The first transistor includes the second electrode, a second insulating film over the second electrode, an oxide semiconductor film over the second insulating film, and a …
- Who is the assignee on this patent?
- Magnolia White Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D86/481. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 24 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).