Direct-bonded optoelectronic interconnect for high-density integrated photonics

US12581994B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12581994-B2
Application numberUS-202117318344-A
CountryUS
Kind codeB2
Filing dateMay 12, 2021
Priority dateDec 15, 2017
Publication dateMar 17, 2026
Grant dateMar 17, 2026

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Direct-bonded optoelectronic interconnects for high-density integrated photonics are provided. A combined electrical and optical interconnect enables direct-bonding of fully-processed optoelectronic dies or wafers to wafers with optoelectronic driver circuitry. The photonic devices may be III-V semiconductor devices. Direct-bonding to silicon or silicon-on-insulator (SOI) wafers enables the integration of photonics with high-density CMOS and other microelectronics packages. Each bonding surface has an optical window to be coupled by direct-bonding. Coplanar electrical contacts lie to the outside, or may circumscribe the respective optical windows and are also direct-bonded across the interface using metal-to-metal direct-bonding, without interfering with the optical windows. Direct hybrid bonding can accomplish both optical and electrical bonding in one overall operation, to mass-produce mLED video displays. The adhesive-free dielectric-to-dielectric direct bonding and solder-free metal-to-metal direct bonding creates high-density electrical interconnects on the same bonding interface as the bonded optical interconnect. Known-good-dies may be used, which is not possible conventionally, and photolithography over their top surfaces can scale to high density.

First claim

Opening claim text (preview).

The invention claimed is: 1 . An apparatus comprising: a first coupling plane formed on a side of a first die having a first optoelectronic device, wherein the first coupling plane comprises: a first transparent optical window formed in the first coupling plane of the first die; a first electrical contact outside a perimeter of the first transparent optical window and disposed in the first coupling plane of the first die; a second electrical contact outside a perimeter of the first electrical contact and disposed in the first coupling plane of the first die; and a second coupling plane formed on a second die having a waveguide, wherein the second coupling plane comprises an optical window, and wherein the first transparent optical window is directly bonded to the optical window to optically connect the first optoelectronic device and the waveguide. 2 . The apparatus of claim 1 , further comprising: a first opposing electrical contact outside a perimeter of the optical window and disposed in the second coupling plane of the second die; a second opposing electrical contact outside a perimeter of the first opposing electrical contact and disposed in the second coupling plane of the second die; and electrical leads to the first opposing electrical contact and the second opposing electrical contact disposed in the second coupling plane of the second die. 3 . The apparatus of claim 2 , further comprising: a dielectric-to-dielectric optical interconnect between the first transparent optical window of the first die and the optical window of the second die; and a solderless metal-to-metal bonded electrical interconnect between (i) the first and second electrical contacts of the first die and (ii) the first and second opposing electrical contacts of the second die forming high-density electrical interconnects on joined coupling planes of the first die and the second die. 4 . The apparatus of claim 2 , further comprising: a dielectric-to-dielectric optical interconnect between the first transparent optical window of the first die and the optical window of the second die; and a direct hybrid bonded interconnect between (i) the first and second electrical contacts of the first die and (ii) the first and second opposing electrical contacts of the second die forming high-density electrical interconnects on joined coupling planes of the first die and the second die. 5 . The apparatus of claim 2 , wherein: the first electrical contact and the second electrical contact of the first die comprises one of a square, rectangular, circular, or ovaline conductive line surrounding the first transparent optical window; and the first opposing electrical contact and the second opposing electrical contact of the second die comprises a corresponding one of a square, rectangular, circular, or ovaline conductive line surrounding the optical window, the corresponding one of the square, rectangular, circular, or ovaline conductive line surrounding the optical window corresponding to the one of the square, rectangular, circular, or ovaline conductive line surrounding the first transparent optical window. 6 . The apparatus of claim 2 , wherein (i) the first electrical contact of the first transparent optical window of the first die or (ii) the first opposing electrical contact of the second die at least partially circumscribe the second optical window of the second die. 7 . The apparatus of claim 2 , wherein the first coupling plane further comprises a first bonding plane associated with the first die and comprising the first transparent optical window, the first electrical contact at least partially circumscribing the first transparent optical window and coplanar with the first transparent optical window, and the second electrical contact at least partially circumscribing the first electrical contact and coplanar with both the first electrical contact and the first transparent optical window; and wherein the second coupling plane further comprises a second bonding plane associated with the second die comprising the optical window, the first opposing electrical contact of the second die at least partially circumscribing the optical window and coplanar with the optical window, and the second opposing electrical contact of the second die at least partially circumscribing the first opposing electrical contact of the second die and coplanar with both the first opposing electrical contact of the second die and the optical window. 8 . An apparatus comprising a first die comprising an optoelectronic device and a second die, the apparatus further comprising: a coupling plane formed on a side of the first die, the coupling plane configured to optically and electrically couple with an opposing coupling plane of the second die, wherein at least a portion of the coupling plane directly bonds to at least a portion of the opposing coupling plane; a first transparent optical window formed in the coupling plane of the first die, the first transparent optical window in communication with the optoelectronic device; a first electrical contact outside a perimeter of the first transparent optical window and disposed in the coupling plane of the first die; a second electrical contact outside a perimeter of the first electrical contact and disposed in the coupling plane of the first die; a first opposing electrical contact disposed in the opposing coupling plane of the second die; a second opposing electrical contact outside a perimeter of the first opposing electrical contact and disposed in the opposing coupling plane of the second die; and electrical leads to the first opposing electrical contact and the second opposing electrical contact disposed in the opposing coupling plane of the second die. 9 . The apparatus of claim 8 , further comprising: the second die comprising a waveguide, the second die further comprising: the opposing coupling plane formed on the second die, the opposing coupling plane configured to optically and electrically couple with the coupling plane of the first die; an optical window in the opposing coupling plane of the second die, the optical window in communication with the waveguide; an optical interconnect between the first transparent optical window of the first die and the optical window of the second die; and an electrical interconnect between (i) the first and second electrical contacts of the first die and (ii) the first and second opposing electrical contacts of the second die forming high-density electrical interconnects on joined coupling planes of the first die and the second die. 10 . The apparatus of claim 9 , wherein: the optical interconnect comprises a dielectric-to-dielectric optical interconnect between the first transparent optical window of the first die and the optical window of the second die; and the electrical interconnect comprises a solderless metal-to-metal bonded electrical interconnect between (i) the first and second electrical contacts of the first die and (ii) the first and second opposing electrical contacts of the second die forming high-density electrical interconnects on joined coupling planes of the first die and the second die. 11 . The apparatus of claim 9 , wherein: the optical interconnect comprises a dielectric-to-dielectric optical interconnect between the first transparent optical window of the first die and the optical window of the second die; and the electrical interconnect comprises a direct hybrid bonded interconnect between (i) the first and second electrical contacts of the first die and (ii) the first and second opposing electrical contacts of the second die forming high-density electrical interconnects on joined cou

Assignees

Inventors

Classifications

  • Subject matter not provided for in other groups of this subclass · CPC title

  • of die-attach connectors · CPC title

  • between multiple chips · CPC title

  • characterised by the direct bonding of electrically conductive pads · CPC title

  • Connecting techniques · CPC title

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What does patent US12581994B2 cover?
Direct-bonded optoelectronic interconnects for high-density integrated photonics are provided. A combined electrical and optical interconnect enables direct-bonding of fully-processed optoelectronic dies or wafers to wafers with optoelectronic driver circuitry. The photonic devices may be III-V semiconductor devices. Direct-bonding to silicon or silicon-on-insulator (SOI) wafers enables the int…
Who is the assignee on this patent?
Adeia Semiconductor Bonding Technologies Inc
What technology area does this patent fall under?
Primary CPC classification H10H20/8506. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 17 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).