Thermal image sensor and electronic device including the same

US12581210B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12581210-B2
Application numberUS-202318210456-A
CountryUS
Kind codeB2
Filing dateJun 15, 2023
Priority dateOct 11, 2022
Publication dateMar 17, 2026
Grant dateMar 17, 2026

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A thermal image sensor includes a substrate; a composite layer including an absorption layer and a sensor array layer provided below the absorption layer, the sensor array layer including a plurality of temperature sensing cells, the composite layer having a pattern formed therein, and the pattern including at least one hole penetrating through the absorption layer; and a support separating the substrate from the composite layer.

First claim

Opening claim text (preview).

What is claimed is: 1 . A thermal image sensor comprising: a substrate; a composite layer comprising an absorption layer and a sensor array layer provided below the absorption layer, the sensor array layer comprising a plurality of temperature sensing cells spaced apart from each other, the composite layer having a pattern formed therein, and the pattern comprising at least one hole penetrating through the absorption layer; and a support separating the substrate from the composite layer, wherein the sensor array layer further comprises an insulating layer around the plurality of temperature sensing cells and filling a region between the plurality of temperature sensing cells, and wherein the at least one hole passes through the insulating layer. 2 . The thermal image sensor of claim 1 , wherein the pattern is configured to increase a thermal resistance of the absorption layer. 3 . The thermal image sensor of claim 1 , wherein the at least one hole comprises a plurality of holes provided at edge regions of the composite layer, and each hole of the plurality of holes has a rectangular cross-section. 4 . The thermal image sensor of claim 1 , wherein the at least one hole comprises a plurality of holes provided at a center of the composite layer, and each hole of the plurality of holes has a square cross-section. 5 . The thermal image sensor of claim 1 , wherein the at least one hole has a cross-sectional shape of a circle, a triangle, a quadrangle, or an ellipse. 6 . The thermal image sensor of claim 1 , wherein the at least one hole comprises a plurality of holes, and wherein, among the plurality of holes forming the pattern, first intervals between first holes of the plurality of holes in a center portion of the composite layer are greater than second intervals between second holes of the plurality of holes at edge regions of the composite layer. 7 . The thermal image sensor of claim 1 , wherein the absorption layer has a multi-layer structure. 8 . The thermal image sensor of claim 1 , wherein each temperature sensing cell of the plurality of temperature sensing cells comprises a magnetoresistive element. 9 . The thermal image sensor of claim 8 , wherein the magnetoresistive element comprises: a first magnetic layer; a second magnetic layer on the first magnetic layer; and a tunneling barrier layer between the first magnetic layer and the second magnetic layer. 10 . The thermal image sensor of claim 9 , wherein the first magnetic layer has a fixed magnetization direction, and wherein the second magnetic layer has a changeable magnetization direction. 11 . The thermal image sensor of claim 8 , wherein the magnetoresistive elements are arranged in series or in parallel. 12 . The thermal image sensor of claim 8 , wherein a width of the magnetoresistive element is from about 10 nanometers to about 100 nanometers. 13 . The thermal image sensor of claim 1 , further comprising a reflective layer provided on the substrate. 14 . The thermal image sensor of claim 1 , further comprising a transmission cap provided on the substrate and covering at least a portion of the composite layer. 15 . The thermal image sensor of claim 14 , wherein the transmission cap is configured to selectively transmit through long-wave infrared rays. 16 . A thermal image sensor comprising: a plurality of pixels in a plurality of rows and a plurality of columns, wherein each pixel of the plurality of pixels comprises: a substrate; a composite layer comprising an absorption layer and a sensor array layer provided below the absorption layer, the sensor array layer comprising a plurality of temperature sensing cells spaced apart from each other, the composite layer having a pattern formed therein, and the pattern comprising at least one hole penetrating through the absorption layer; and a support separating the substrate from the composite layer, wherein the sensor array layer further comprises an insulating layer around the plurality of temperature sensing cells and filling a region between the plurality of temperature sensing cells, and wherein the at least one hole passes through the insulating layer. 17 . The thermal image sensor of claim 16 , wherein the at least one hole comprises a plurality of holes provided at edge regions of the composite layer, and each hole of the plurality of holes has a rectangular cross-section. 18 . An electronic device comprising: a thermal image sensor; and a processor configured to receive a sensing signal from the thermal image sensor and process the sensing signal, wherein the thermal image sensor comprises: a substrate; a composite layer comprising an absorption layer and a sensor array layer provided below the absorption layer, the sensor array layer comprising a plurality of temperature sensing cells spaced apart from each other, the composite layer having a pattern formed therein, and the pattern comprising at least one hole penetrating through the absorption layer; and a support separating the substrate from the composite layer, wherein the sensor array layer further comprises an insulating layer around the plurality of temperature sensing cells and filling a region between the plurality of temperature sensing cells, and wherein the at least one hole passes through the insulating layer.

Assignees

Inventors

Classifications

  • G01K7/36Primary

    using magnetic elements, e.g. magnets, coils (magnetic elements per se H01F) · CPC title

  • Arrays · CPC title

  • Thermography; Techniques using wholly visual means · CPC title

  • Special manufacturing steps or sacrificial layers or layer structures · CPC title

  • using resistive elements · CPC title

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Frequently asked questions

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What does patent US12581210B2 cover?
A thermal image sensor includes a substrate; a composite layer including an absorption layer and a sensor array layer provided below the absorption layer, the sensor array layer including a plurality of temperature sensing cells, the composite layer having a pattern formed therein, and the pattern including at least one hole penetrating through the absorption layer; and a support separating the…
Who is the assignee on this patent?
Samsung Electronics Co Ltd
What technology area does this patent fall under?
Primary CPC classification G01K7/36. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Mar 17 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).