Electronic module

US12580144B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12580144-B2
Application numberUS-202118003534-A
CountryUS
Kind codeB2
Filing dateMay 19, 2021
Priority dateJun 29, 2020
Publication dateMar 17, 2026
Grant dateMar 17, 2026

How to read this patent

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Various embodiments of the teachings herein include an electronic module comprising a microelectromechanical system (MEMS) switch with a substrate and a semiconductor component. The semiconductor component is formed with the substrate and connected to MEMS switch. The semiconductor component includes a diode. The substrate is formed from or with a silicon-on-insulator-wafer and/or silicon-on-insulator substrate.

First claim

Opening claim text (preview).

The invention claimed is: 1 . An electronic module comprising: a microelectromechanical system (MEMS) switch configured to open when voltages of matching polarity are applied to a first control contact and a second control contact; a substrate; and a semiconductor component including a diode configured to provide overvoltage protection; wherein the semiconductor component is formed with the substrate and connected to the MEMS switch; and wherein the substrate comprises a silicon-on-insulator-wafer and/or silicon-on-insulator substrate. 2 . The electronic module as claimed in claim 1 , wherein the semiconductor component is formed by doping the substrate. 3 . The electronic module as claimed in claim 1 , wherein the diode comprises a pn-diode, a Schottky diode, and/or a PIN diode. 4 . The electronic module as claimed in claim 1 , wherein the semiconductor component includes an arrangement of diodes in series. 5 . The electronic module as claimed in claim 1 , wherein the semiconductor component includes an arrangement of diodes in parallel. 6 . The electronic module as claimed in claim 1 , wherein the semiconductor component connects a source terminal and a drain terminal of the MEMS switch. 7 . The electronic module as claimed in claim 1 , wherein the semiconductor component connects gate terminals of the MEMS switch to each other. 8 . The electronic module as claimed in claim 1 , wherein the semiconductor component is part of a supply line to a source terminal and/or a drain terminal and/or a gate terminal of the MEMS switch. 9 . The electronic module as claimed in claim 1 , wherein the MEMS switch includes a flexure. 10 . The electronic module as claimed in claim 9 , in which the flexure comprises a flexure beam.

Assignees

Inventors

Classifications

  • Protective switches or relays using micromechanics · CPC title

  • Details of the protective switches or relays covered by groups H01H73/00 - H01H83/00 · CPC title

  • Switches making use of microelectromechanical systems [MEMS] (for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009) · CPC title

  • having a cantilever fixed on one side connected to one or more dimples · CPC title

  • with perpendicular movement of the movable contact relative to the substrate · CPC title

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Frequently asked questions

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What does patent US12580144B2 cover?
Various embodiments of the teachings herein include an electronic module comprising a microelectromechanical system (MEMS) switch with a substrate and a semiconductor component. The semiconductor component is formed with the substrate and connected to MEMS switch. The semiconductor component includes a diode. The substrate is formed from or with a silicon-on-insulator-wafer and/or silicon-on-in…
Who is the assignee on this patent?
Siemens Ag, Bosch Gmbh Robert
What technology area does this patent fall under?
Primary CPC classification H01H59/0009. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 17 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).