Photon detector, detector device and imaging apparatus

Patent metadata

Field	Value
Publication number	US-12578487-B2
Application number	US-202218691906-A
Country	US
Kind code	B2
Filing date	Sep 15, 2022
Priority date	Sep 24, 2021
Publication date	Mar 17, 2026
Grant date	Mar 17, 2026

Abstract

The present invention relates to a photon detector, a detector device and an imaging apparatus for detection of radiation, in particular gamma radiation. The photon detector comprises a direct conversion detector ( 11 ) configured to detect gamma radiation and generate direct conversion signals responsive to impingement of photons, a single photon avalanche diode. SPAD, detector array ( 12 ) comprising a plurality of SPAD detectors ( 13 ) configured to detect Cherenkov radiation generated in the direct conversion detector in response to impingement of photons and generate SPAD detection signals, and an electrode array ( 14 ) comprising aurality of electrodes arranged on top of the direct conversion detector and between the direct conversion detector and the SPAD detector array and configured to read out the direct conversion signals. The SPAD detector array substantially covers a surface on one side of the direct conversion detector.

First claim

The invention claimed is:

1 . Photon detector comprising:
a direct conversion detector configured to detect gamma radiation and generate direct conversion signals responsive to impingement of photons, a single photon avalanche diode, SPAD, detector array comprising a plurality of SPAD detectors configured to detect Cherenkov radiation generated in the direct conversion detector in response to impingement of photons and generate SPAD detection signals, and an electrode array comprising a plurality of electrodes arranged on top of the direct conversion detector and between the direct conversion detector and the SPAD detector array and configured to read out the direct conversion signals, wherein the SPAD detector array substantially covers a surface on one side of the direct conversion detector.

2 . Photon detector as claimed in claim 1 , comprising
two SPAD detector arrays including a first SPAD detector array arranged on a first side of the direct conversion detector facing the impinging photons and a second SPAD detector array arranged on a second side of the direct conversion detector opposite the first side and facing away from the impinging photons, and two electrode arrays comprising a first electrode array arranged between the first SPAD detector array and the direct conversion detector and a second electrode array arranged between the second SPAD detector array and the direct conversion detector.

3 . Photon detector as claimed in claim 1 , wherein the electrodes of the electrode array are made of a material that is substantially transparent for radiation in a wavelength range of Cherenkov photons, in particular between 300 and 600 nm.

4 . Photon detector as claimed in claim 1 , wherein the electrodes of the electrode array are made of a material that has a transmission rate of more than 60%, in particular more than 75%, for radiation in a wavelength range of Cherenkov photons.

5 . Photon detector as claimed in claim 1 , wherein the electrodes of the electrode array are made of one of carbon nanotubes, graphene, graphene-covered hybrid materials, doped compounds, conductive polymers, amorphous indium zinc oxide, silver nanoparticle indium tin oxide, indium tin oxide or an alloy comprising indium, aluminum, gallium and zinc oxide, carbon nanotubes, graphene or graphene-covered hybrid materials.

6 . Photon detector as claimed in claim 1 , wherein the SPAD detectors are configured to be sensitive in a wavelength range below 600 nm, in particular in a range of 300 to 600 nm.

7 . Photon detector as claimed in claim 1 , wherein the SPAD detectors are configured as p-on-n SPAD detectors.

8 . Photon detector as claimed in claim 1 , wherein the SPAD detectors comprise an anti-reflective coating.

9 . Photon detector as claimed in claim 1 , wherein the SPAD detector array is bonded to the electrode array.

10 . Detector device comprising a plurality of photon detectors according to claim 1 .

11 . Detector device as claimed in claim 10 ,
comprising processing circuitry configured to combine the direct conversion signals and the SPAD detection signals into combined signals, wherein the direct conversion signals provide information on spatial distribution and energy distribution of photon impingement and the SPAD detection signals provide information on spatial distribution and time distribution of photon impingement, the combined signals comprising combined information on spatial distribution, energy distribution and time distribution of photon impingement.

12 . Detector device as claimed in claim 11 ,
wherein the processing circuitry is configured to use the SPAD detection signals for estimating the position of photon impingement on the direct conversion detector.

13 . Detector device as claimed in claim 10 ,
comprising charge detection circuitry coupled to the electrodes of the electrode array configured to process the direct conversion signals, in particular comprising, per electrode or group of electrodes, a charge-sensitive amplifier, a shaping circuit and an analog-to-digital converter.

14 . Detector device as claimed in claim 1 ,
further comprising time-to-digital circuitry coupled to the SPAD detector array and configured to generate a digital time stamp for detection events of the detection of Cherenkov radiation.

15 . Imaging apparatus comprising a detector device as claimed in claim 10 .

Assignees

• Koninklijke Philips Nv

Inventors

• Frach Thomas

Classifications

• G01T1/2985

  In depth localisation, e.g. using positron emitters; Tomographic imaging (longitudinal and transverse section imaging; apparatus for radiation diagnosis sequentially in different planes, steroscopic radiation diagnosis); (using external radiation sources A61B6/02) · CPC title

• G01T1/249 Primary

  specially adapted for use in SPECT or PET (SPECT imaging G01T1/1642; PET imaging G01T1/2985; detecting prohibited goods, e.g. weapons, explosives, hazardous substances, contraband or smuggled objects G01V5/20) · CPC title

• G01T1/248

  Silicon photomultipliers [SiPM], e.g. an avalanche photodiode [APD] array on a common Si substrate · CPC title

• G01T1/241

  Electrode arrangements, e.g. continuous or parallel strips or the like · CPC title

• G01T1/22 Primary

  with Cerenkov detectors · CPC title