Quantum dot and method for producing the same

US12577464B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12577464-B2
Application numberUS-202318383091-A
CountryUS
Kind codeB2
Filing dateOct 24, 2023
Priority dateAug 23, 2019
Publication dateMar 17, 2026
Grant dateMar 17, 2026

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgIn x Ga 1−x S y Se 1−y or ZnAgIn x Ga 1−x S y Se 1−y (where 0≤x<1 and 0≤y≤1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater than or equal to 35% in the green wavelength range to the red wavelength range.

First claim

Opening claim text (preview).

The invention claimed is: 1 . A method for synthesizing quantum dots, comprising: synthesizing a composition including an organic silver compound, an organic gallium compound, and sulfur or selenium, or a composition including an organic silver compound, an organic indium compound, an organic gallium compound, and sulfur or selenium, and thereafter, adding an organic zinc compound or an inorganic zinc compound, each quantum dot containing ZnAgIn x Ga 1−x S y Se 1−y (wherein 0≤x<1 and 0≤y≤1), wherein the quantum dot contains at least silver (Ag), gallium (Ga), and selenium (Se), or contains at least silver (Ag), gallium (Ga), and sulfur(S), and does not contain cadmium (Cd). 2 . The method for synthesizing the quantum dots according to claim 1 , wherein: the synthesizing the quantum dots includes forming particles in an initial stage of a reaction and adding a predetermined element later, and the particles do not contain In in the initial stage of the reaction. 3 . The method for synthesizing the quantum dots according to claim 2 , wherein Zn is not added in the initial stage of the reaction and is added later. 4 . The method for synthesizing the quantum dots according to claim 1 , wherein thiuram, disulfide, S-ODE obtained by dissolving S in octadecene, or S-OLAm/DDT obtained by dissolving S in oleylamine and dodecanethiol is used as a S source. 5 . The method for synthesizing the quantum dots according to claim 1 , wherein Se-OLAm/DDT obtained by dissolving Se in oleylamine and dodecanethiol is used as a Se source. 6 . The method for synthesizing the quantum dots according to claim 1 , wherein gallium acetylacetonate (Ga(acac)3) or gallium chloride (GaCl3) is used as a Ga source. 7 . The method for synthesizing the quantum dots according to claim 1 , further comprising adding TOP to a reaction solution obtained by mixing an Ag source, a Ga source and a S source, or mixing an Ag source, a Ga source, and a Se source, or further comprising performing a dispersion process using TOP for the reaction solution. 8 . The method for synthesizing the quantum dots according to claim 1 , further comprising centrifuging a reaction solution synthesized by mixing an Ag source, a Ga source, and a S source, or mixing an Ag source, a Ga source, and a Se source. 9 . The method for synthesizing the quantum dots according to a claim 8 , wherein the centrifugation is performed by adding as a solvent toluene, methanol, ethanol, or acetone to the reaction solution synthesized by mixing the Ag source, the Ga source, and the S source, or mixing the Ag source, the Ga source, and the Se source.

Assignees

Inventors

Classifications

  • Optical properties, e.g. expressed in CIELAB-values · CPC title

  • Nanometer sized, i.e. from 1-100 nanometer · CPC title

  • Compounds containing gallium, indium or thallium, with or without oxygen or hydrogen, and containing two or more other elements · CPC title

  • Manufacture or treatment of nanostructures · CPC title

  • Nanooptics, e.g. quantum optics or photonic crystals · CPC title

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What does patent US12577464B2 cover?
To provide Cd-free chalcopyrite-based quantum dots with a narrow fluorescence FWHM and a high fluorescence quantum yield. The quantum dots of the present invention contain AgIn x Ga 1−x S y Se 1−y or ZnAgIn x Ga 1−x S y Se 1−y (where 0≤x<1 and 0≤y≤1) and exhibit fluorescence properties including a fluorescence FWHM of less than or equal to 45 nm and a fluorescence quantum yield of greater tha…
Who is the assignee on this patent?
Ns Mat Inc, Toppan Inc
What technology area does this patent fall under?
Primary CPC classification C09K11/621. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 17 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 9 related publications on this page (citations in our corpus or others sharing the same primary CPC).