Method of forming silicon within a gap on a surface of a substrate

Patent metadata

Field	Value
Publication number	US-12575381-B2
Application number	US-202318212827-A
Country	US
Kind code	B2
Filing date	Jun 22, 2023
Priority date	Jun 27, 2022
Publication date	Mar 10, 2026
Grant date	Mar 10, 2026

Abstract

A method of forming silicon within a gap on a surface of a substrate. The method includes use of two or more pyrometers to measure temperatures at two or more positions on a substrate and/or a substrate support and a plurality of heaters that can be divided into zones of heaters, wherein the heaters or zones of heaters can be independently controlled based on the measured temperatures and desired temperature profiles.

First claim

The invention claimed is:

1 . A method of forming silicon within a gap on a surface of a substrate, the method comprising:
providing the substrate within a reaction chamber of a reactor, the reactor comprising a first zone of one or more heaters and a second zone of one or more heaters; and selectively forming epitaxial silicon on a bottom surface of the gap relative to a sidewall of the gap, wherein during the step of selectively forming epitaxial silicon, the method further comprises:
measuring one or more first substrate temperatures at a first substrate location using a first pyrometer;
measuring one or more second substrate temperatures at a second substrate location using a second pyrometer;
responsive to the step of measuring one or more first substrate temperatures, independently controlling the first zone of one or more heaters; and
responsive to the step of measuring one or more second substrate temperatures, independently controlling the second zone of one or more heaters.

2 . The method according to claim 1 , wherein the first substrate location is at a center location of the substrate.

3 . The method according to claim 1 , wherein the second substrate location is radially exterior the first substrate location.

4 . The method according to claim 1 , wherein the step of independently controlling the first zone of one or more heaters comprises comparing a first substrate temperature of the one or more first substrate temperatures to a first substrate temperature setpoint.

5 . The method according to claim 1 , wherein the step of independently controlling the second zone of one or more heaters comprises comparing the second substrate temperature of the one or more second substrate temperatures to a second substrate temperature setpoint.

6 . The method according to claim 1 , wherein the step of measuring one or more first substrate temperatures comprises measuring a plurality of first location temperatures at the first substrate location to obtain a plurality of first location temperature measurements, and wherein the step of independently controlling the first zone of one or more heaters comprises comparing a value derived from the plurality of first location temperature measurements to a first substrate temperature setpoint.

7 . The method according to claim 1 , wherein the step of measuring one or more second substrate temperatures comprises measuring a plurality of second location temperatures at the second substrate location to obtain a plurality of second location temperature measurements, and wherein the step of independently controlling the second zone of one or more heaters comprises comparing a value derived from the plurality of second location temperature measurements to a second substrate temperature setpoint.

8 . The method according to claim 1 , further comprising determining a temperature difference between at least one of the one or more first substrate temperatures and at least one of the one or more second substrate temperatures, wherein one or more of the steps of independently controlling the first zone of one or more heaters and independently controlling the second zone of one or more heaters is responsive to the temperature difference.

9 . The method according to claim 8 , comprising comparing the temperature difference to a temperature difference setpoint.

10 . The method according to claim 8 , wherein one or more of the steps of independently controlling the first zone of one or more heaters and independently controlling the second zone of one or more heaters is responsive to the temperature difference and one or more of the value derived from the plurality of first location temperature measurements and the value derived from the plurality of second location temperature measurements.

11 . The method according to claim 4 , wherein the first substrate temperature setpoint is different than a second substrate temperature setpoint.

12 . The method according to claim 1 , wherein the first zone of one or more heaters comprises 2 to 12 or 2 to 8 or 2 to 4 heaters above the reaction chamber, and wherein the second zone of one or more heaters comprises 2 to 12 or 2 to 8 or 2 to 4 heaters above the reaction chamber.

13 . The method according to claim 1 , wherein the first zone of one or more heaters comprises at least one heater above a substrate support and at least one heater beneath the substrate support, and wherein the second zone of one or more heaters comprises at least one heater above the substrate support and at least one heater beneath the substrate support.

14 . The method according to claim 1 , wherein the first zone of one or more heaters comprises two or more first zone heaters, the method further comprising determining a first power offset for two or more of the first zone heaters, wherein the step of independently controlling the first zone of one or more heaters comprises providing power to the two or more first zone heaters responsive to the first power offset.

15 . The method according to claim 1 , wherein the second zone of one or more heaters comprises two or more second zone heaters, the method further comprising determining a second power offset for two or more of the second zone heaters, wherein the step of independently controlling the second zone of one or more heaters comprises providing power to the two or more second zone heaters responsive to the second power offset.

16 . The method according to claim 1 , further comprising a step of determining a desired temperature profile within a first region on the substrate, wherein a first power offset is based on the desired temperature profile within the first region on the substrate.

17 . The method according to claim 1 , further comprising a step of determining a desired temperature profile within a second region on the substrate, wherein a second power offset is based on the desired temperature profile within the second region on the substrate.

18 . The method according to claim 1 , wherein the step of selectively forming epitaxial silicon on a bottom surface comprises:
depositing silicon within the gap; and etching silicon to remove silicon from the sidewall.

19 . The method according to claim 18 , wherein one or more of a first substrate temperature setpoint and a second substrate temperature setpoint differs for the step of depositing and the step of etching.

20 . The method according to claim 18 , further comprising repeating the steps of depositing and etching to fill the gap with silicon.

Assignees

• Asm Ip Holding Bv

Inventors

• Elleuch Omar
• James Robinson
• Westrom Peter
• Miskin Caleb
• Demos Alexandros

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title