Semiconductor processing chamber adapter

Patent metadata

Field	Value
Publication number	US-12575360-B2
Application number	US-202117366761-A
Country	US
Kind code	B2
Filing date	Jul 2, 2021
Priority date	Jul 2, 2021
Publication date	Mar 10, 2026
Grant date	Mar 10, 2026

Abstract

Exemplary semiconductor processing systems may include a processing chamber. The systems may include a remote plasma unit coupled with the processing chamber. The systems may include an adapter coupled between the remote plasma unit and the processing chamber. The adapter may be characterized by a first end and a second end opposite the first end. The remote plasma unit may be coupled with the adapter at the first end. The adapter may define a first central channel extending more than 50% of a length of the adapter from the first end of the adapter. The adapter may define a second central channel extending less than 50% of the length of the adapter from the second end of the adapter. The adapter may define a transition between the first central channel and the second central channel.

First claim

The invention claimed is:

1 . A semiconductor processing system comprising:
a processing chamber; a system housing coupled to electrical ground; a remote plasma unit coupled with the processing chamber; and an adapter coupled between the remote plasma unit and the processing chamber, wherein:
the adapter is characterized by an upper end and a lower end opposite the upper end, wherein the remote plasma unit is coupled with the adapter at the upper end;
the adapter defines a first central channel extending more than 50% of a length of the adapter from the upper end of the adapter;
the adapter defines a second central channel extending less than 50% of the length of the adapter from the lower end of the adapter;
the adapter defines a transition between the first central channel and the second central channel;
the upper end of the adapter comprises an upper mating flange upon which the remote plasma unit is seated;
the lower end of the adapter comprises a lower mating flange;
the adapter defines a recessed ledge between the upper mating flange and the lower mating flange, the recessed ledge having an upper surface; and
the system housing is seated on the upper surface of the recessed ledge, electrically grounding the adapter.

2 . The semiconductor processing system of claim 1 , wherein the transition defined between the first central channel and the second central channel of the adapter comprises a plurality of apertures defined by the adapter and fluidly coupling the first central channel with the second central channel.

3 . The semiconductor processing system of claim 2 , wherein each aperture of the plurality of apertures is characterized by a cross-sectional diameter of less than or about 10 mm.

4 . The semiconductor processing system of claim 1 , wherein the first central channel and the second central channel are characterized by a similar cross-sectional diameter.

5 . The semiconductor processing system of claim 1 , wherein the second central channel extends less than 10% of the length of the adapter from the lower end of the adapter.

6 . The semiconductor processing system of claim 1 , wherein the adapter is directly coupled to the system housing via a connector.

7 . The semiconductor processing system of claim 1 , further comprising an isolator directly coupled with the lower end of the adapter, wherein the isolator comprises a plurality of channels.

8 . The semiconductor processing system of claim 7 , wherein the isolator comprises a ceramic.

9 . The semiconductor processing system of claim 7 , further comprising a mixing manifold coupled between the isolator and the processing chamber.

10 . The semiconductor processing system of claim 9 , wherein the mixing manifold is characterized by a first end and a second end opposite the first end, wherein the mixing manifold is coupled with the processing chamber at the second end, wherein the mixing manifold defines a central channel through the mixing manifold.

11 . The semiconductor processing system of claim 10 , wherein the mixing manifold is electrically coupled with an RF power supply.

12 . The semiconductor processing system of claim 1 , wherein the recessed ledge is recessed from an outer diameter of the adapter.

13 . The semiconductor processing system of claim 1 , wherein the recessed ledge is defined around the first central channel and is orthogonal to the length of the first central channel.

14 . A semiconductor processing system comprising:
a remote plasma unit; a system housing coupled to electrical ground; a processing chamber comprising:
a gasbox defining a central channel,
a faceplate coupled with the gasbox at a first surface of the faceplate,
a spacer coupled with the faceplate at a second surface of the faceplate opposite the first surface of the faceplate, and
a showerhead coupled between the spacer and a processing region of the processing chamber; and
an adapter coupled between the remote plasma unit and the processing chamber, wherein:
the adapter is characterized by an upper end and a lower end opposite the upper end; the remote plasma unit is coupled with the adapter at the upper end;
the adapter defines a first central channel extending more than 50% of a length of the adapter from the upper end of the adapter;
the adapter defines a second central channel extending less than 50% of the length of the adapter from the lower end of the adapter;
the adapter defines a transition between the first central channel and the second central channel;
the adapter defines a recessed ledge that is disposed between and spaced apart from the upper end and the lower end, the recessed ledge having an upper surface; and
the system housing is seated on the upper surface of the recessed ledge, electrically grounding the adapter.

15 . The semiconductor processing system of claim 14 , further comprising a mixing manifold seated on the gasbox, wherein the adapter is coupled between the mixing manifold and the remote plasma unit.

16 . The semiconductor processing system of claim 15 , wherein the gasbox, the faceplate, and the mixing manifold are electrically coupled with an RF power source.

17 . The semiconductor processing system of claim 14 , wherein the showerhead is coupled to electrical ground, and wherein a plasma region is defined between the showerhead and the faceplate.

18 . The semiconductor processing system of claim 14 , wherein the transition defined between the first central channel and the second central channel of the adapter comprises a plurality of apertures defined by the adapter and fluidly coupling the first central channel with the second central channel.

19 . The semiconductor processing system of claim 14 , wherein the recessed ledge is recessed from an outer diameter of the adapter.

20 . A semiconductor processing system comprising:
a remote plasma unit; a system housing coupled to electrical ground; a processing chamber comprising:
a gasbox defining a central channel,
a faceplate coupled with the gasbox at a first surface of the faceplate, wherein the gasbox and the faceplate are coupled with an RF power supply,
a spacer coupled with the faceplate at a second surface of the faceplate opposite the first surface of the faceplate, and
a showerhead coupled between the spacer and a processing region of the processing chamber, wherein the showerhead is coupled to electrical ground; and
an adapter coupled between the remote plasma unit and the processing chamber, wherein:
the adapter is characterized by an upper end and a lower end opposite the upper end;
the remote plasma unit is coupled with the adapter at the upper end;
the adapter defines a first central channel extending more than 50% of a length of the adapter from the upper end of the adapter;
the adapter defines a second central channel extending less than 50% of the length of the adapter from the lower end of the adapter;
the adapter defines a transition between the first central channel and the second central channel;
the adapter defines a recessed ledge that is disposed between and spaced apart from the upper end and the lower end, the recessed ledge having an upper surface; and
the system housing is seated on the upper surface of the recessed ledge, electrically grounding the adapter.

Assignees

• Applied Materials Inc

Inventors

• Nguyen Son T
• Schatz Kenneth D
• Nguyen Anh N
• Jung Soonwook
• Pakulski Ryan
• Wang Anchuan
• Li Zihui

Classifications

• H01J37/32082

  Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title

• H01J37/32357 Primary

  Generation remote from the workpiece, e.g. down-stream · CPC title

• H10P72/0421 Primary

  for drying etching · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title

• H01J37/3244

  Gas supply means · CPC title