Light-emitting diode chip and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-12575229-B2
Application number	US-202217833921-A
Country	US
Kind code	B2
Filing date	Jun 7, 2022
Priority date	Jun 7, 2021
Publication date	Mar 10, 2026
Grant date	Mar 10, 2026

Abstract

The present disclosure provides a light-emitting diode chip, which includes a substrate, an epitaxial structure, an electrode metal layer, and a eutectic metal layer. The eutectic metal layer has an elongation greater than that of the electrode metal layer, and a hardness less than that of the electrode metal layer.

First claim

What is claimed is:

1 . A light-emitting diode chip, comprising:
a substrate; an epitaxial structure provided on the substrate, the epitaxial structure comprising a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are laminated in a direction away from the substrate; an electrode metal layer provided on the epitaxial structure, the electrode metal layer comprising a first electrode connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer, the first electrode being insulated from the second electrode; and a eutectic metal layer provided on the electrode metal layer, the eutectic metal layer comprising a first eutectic electrode connected to the first electrode and a second eutectic electrode connected to the second electrode, the first eutectic electrode being insulated from the second eutectic electrode, wherein the eutectic metal layer has an elongation greater than that of the electrode metal layer and a hardness less than that of the electrode metal layer, and the eutectic metal layer comprises a pure aluminum reflective layer.

2 . The light-emitting diode chip of claim 1 , wherein the electrode metal layer comprises an aluminum alloy reflective layer.

3 . The light-emitting diode chip of claim 2 , wherein a percentage of alloying elements in the aluminum alloy reflective layer is less than or equal to 15% by mass, and the alloying elements comprise at least one of chromium, copper, magnesium, manganese, nickel or zinc.

4 . The light-emitting diode chip of claim 1 , wherein an orthographic projection of the eutectic metal layer on the substrate is larger than an orthographic projection of the electrode metal layer on the substrate.

5 . The light-emitting diode chip of claim 1 , further comprising a current spreading layer provided on a surface of the second semiconductor layer, the current spreading layer, the second semiconductor layer and the light-emitting layer being commonly provided with an opening that extends therethrough to a surface of the first semiconductor layer,
wherein the first electrode is provided on a part of the surface of the first semiconductor layer within the opening, and is insulated from the light-emitting layer, the second semiconductor layer and the current spreading layer, the second electrode being provided on a surface of the current spreading layer.

6 . The light-emitting diode chip of claim 5 , further comprising an insulating layer provided on a part of the surface of the current spreading layer that is not covered by the second electrode, a sidewall of the opening and an exposed part of the surface of the first semiconductor layer, and between the electrode metal layer and the eutectic metal layer, the first eutectic electrode being connected to the first electrode through a first via in the insulating layer, the second eutectic electrode being connected to the second electrode through a second via in the insulating layer.

7 . The light-emitting diode chip of claim 6 , wherein the insulating layer comprises a Bragg reflector layer.

8 . A method for manufacturing a light-emitting diode chip, comprising:
providing a substrate; growing an epitaxial structure on the substrate, the epitaxial structure comprising a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are laminated in a direction away from the substrate; forming an electrode metal layer on the epitaxial structure, the electrode metal layer comprising a first electrode connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer, the first electrode being insulated from the second electrode; and forming a eutectic metal layer on the electrode metal layer, the eutectic metal layer comprising a first eutectic electrode connected to the first electrode and a second eutectic electrode connected to the second electrode, the first eutectic electrode being insulated from the second eutectic electrode, wherein the eutectic metal layer has an elongation greater than that of the electrode metal layer and a hardness less than that of the electrode metal layer, and the eutectic metal layer comprises a pure aluminum reflective layer.

9 . The method of claim 8 , wherein the forming the electrode metal layer on the epitaxial structure comprises forming, on the epitaxial structure, a metal stack comprising an aluminum alloy reflective layer.

10 . The method of claim 8 , wherein the forming the eutectic metal layer on the electrode metal layer comprises forming, on the electrode metal layer, a metal stack comprising a pure aluminum reflective layer.

Assignees

• Xiamen Sanan Optoelectronics Co Ltd

Inventors

• Zeng Jiangbin
• He Anhe
• Peng Kangwei
• Lin Suhui
• Chang Chung-Ying
• Liu Peng
• Zhan Yu
• Lu Chao
• Wang Qing
• Hong Lingyuan

Classifications

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/814

  having reflecting means, e.g. semiconductor Bragg reflectors · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/8312

  extending at least partially through the bodies · CPC title

• H10H20/841

  Reflective coatings, e.g. dielectric Bragg reflectors · CPC title