Semiconductor element and semiconductor device

Patent metadata

Field	Value
Publication number	US-12575153-B2
Application number	US-202217882193-A
Country	US
Kind code	B2
Filing date	Aug 5, 2022
Priority date	Feb 7, 2020
Publication date	Mar 10, 2026
Grant date	Mar 10, 2026

Abstract

Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, containing gallium, the conductive substrate having a larger area than the oxide semiconductor film.

First claim

What is claimed is:

1 . A semiconductor element comprising:
a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged over the conductive substrate via a porous layer, the oxide semiconductor film including an oxide, as a major component, containing gallium, the conductive substrate having a larger area than the oxide semiconductor film.

2 . A semiconductor element comprising:
a multilayer structure including: an electrode; and an oxide semiconductor film arranged directly on the electrode or over the electrode via a different layer, the oxide semiconductor film including an oxide, as a major component, containing gallium, the electrode having a larger area than the oxide semiconductor film and having a smaller width portion than a remainder of the electrode.

3 . The semiconductor element according to claim 1 , wherein
the oxide has a corundum structure.

4 . The semiconductor element according to claim 1 , wherein
the oxide is α-Ga 2 O 3 or a mixed crystal of α-Ga 2 O 3 .

5 . The semiconductor element according to claim 1 , wherein
the conductive substrate has a linear thermal expansion coefficient that is equal to or less than a linear thermal expansion coefficient of the oxide semiconductor film.

6 . The semiconductor element according to claim 1 , wherein
the conductive substrate is a metal substrate or a semiconductor substrate.

7 . The semiconductor element according to claim 1 , wherein
the conductive substrate has a size larger area than an area of the oxide semiconductor film.

8 . The semiconductor element according to claim 2 , wherein
the electrode has a size larger area than an area of the oxide semiconductor film.

9 . The semiconductor element according to claim 1 , wherein
the conductive substrate has an area that is 1.1 to 4 times an area of the oxide semiconductor film.

10 . The semiconductor element according to claim 2 , wherein
the electrode has an area that is 1.1 to 4 times an area of the oxide semiconductor film.

11 . The semiconductor element according to claim 1 , wherein
the conductive substrate has a side surface as a cut surface and the cut surface has a step or a burr.

12 . The semiconductor element according to claim 1 , wherein
the semiconductor element is a vertical device.

13 . The semiconductor element according to claim 1 , wherein
the semiconductor element is a power device.

14 . The semiconductor element according to claim 1 , wherein
the semiconductor element is a Schottky barrier diode (SBD), a metal oxide semiconductor field-effect transistor (MOSFET), or an insulated gate bipolar transistor (IGBT).

15 . A semiconductor device configured by joining at least a semiconductor element with a joint member to a lead frame, a circuit board, or a heat dissipation substrate,
the semiconductor element being the semiconductor element according to claim 1 .

16 . The semiconductor device according to claim 15 , wherein
the semiconductor device is a power module, an inverter, or a converter.

17 . The semiconductor device according to claim 15 , wherein
the semiconductor device is a power card.

18 . A semiconductor system comprising a semiconductor element,
the semiconductor element being the semiconductor element according to claim 1 .

Assignees

• Flosfia Inc

Inventors

• Matsubara Yusuke
• Imafuji Osamu
• Ando Hiroyuki
• Takehara Hideki
• Shinohe Takashi
• Okigawa Mitsuru

Classifications

• H10D62/875

  being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874) · CPC title

• H10D8/60 Primary

  Schottky-barrier diodes · CPC title

• H10W72/30

  Die-attach connectors · CPC title

• H10W72/50

  Bond wires · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title