Method for manufacturing electronic component

Patent metadata

Field	Value
Publication number	US-12573564-B2
Application number	US-202117922577-A
Country	US
Kind code	B2
Filing date	Apr 23, 2021
Priority date	May 1, 2020
Publication date	Mar 10, 2026
Grant date	Mar 10, 2026

Abstract

A method for manufacturing an electronic component includes: a preparation step of preparing an electrode-forming body for electronic components; and an electrode forming step of forming an electrode on an outer surface of the electrode-forming body for electronic components, wherein in the electrode forming step, a conductive resin layer is formed on the electrode-forming body for electronic components by using a conductive resin composition containing a silicone resin. According to the present invention, it is possible to provide a method for manufacturing an electronic component having high moisture resistance. Alternatively, it is possible to provide a method for manufacturing an electronic component having reduced restrictions on design and manufacturing and high manufacturing efficiency, in addition to high moisture resistance.

First claim

The invention claimed is:

1 . A method for manufacturing an electronic component, comprising:
a preparation step of preparing an electrode-forming body for electronic components; and an electrode forming step of forming an electrode on an outer surface of the electrode-forming body for electronic components, wherein a conductive resin layer is formed on the electrode-forming body for electronic components by applying a conductive resin composition containing a thermosetting silicone resin and a metal powder to the electrode-forming body for electronic components and then curing thermally the conductive resin composition, wherein the conductive resin layer has a thickness of 2.5 μm or more, wherein a moisture permeation amount is 40.0 mg or less as determined by casting the conductive resin composition on a PET film to a thickness of 250 μm; curing the conductive resin composition under at 200° C. for 60 minutes, resulting in a cured film; cutting the cured film into a circle 7.5 mm in diameter; fixing the cured film with an adhesive so as to cover a 5-ml glass bottle containing 2 grams of silica gel; placing the glass bottle in a 750-ml vessel containing 100 ml of purified water so that the cured film does not come into contact with the purified water; sealing and placing the 750-ml vessel in a dryer at 65° C. to be left for 15 hours; measuring a weight of the glass bottle before and after the glass bottle is placed in the dryer; and defining a weight increase thereof as the moisture permeation amount, wherein the electrode-forming body for electronic components has at least one end surface portion, wherein a corner portion is an outer circumferential part of the end surface portion, where the end surface portion connects to a surface different from the end surface portion, and wherein the conductive resin layer is formed by applying the conductive resin composition so as to cover at least the corner portion in the electrode forming step, and wherein a content of a resin component in the conductive resin composition containing the thermosetting silicone resin is 2.5 to 35.0 parts by mass with respect to 100.0 parts by mass of the metal powder, and wherein the thermosetting silicone resin has a hydroxy group and is cured by heating without using a curing agent.

2 . The method according to claim 1 , wherein: when a 1% strain is applied to the conductive resin composition at an angular frequency of 1 Hz, a value of a phase difference δ between the strain and a stress caused by the strain is in a range of 32 to 88°; and/or a ratio of a viscosity of the conductive resin composition at a shear rate of 0.4 (l/s) to a viscosity thereof at a shear rate of 40 (l/s) is in a range of 1.4 to 60.0.

3 . The method according to claim 2 , wherein when the conductive resin composition is cast on a slide glass substrate to a thickness of 50 μm, cured by placing an aluminum cylinder having a diameter of 3 mm thereon under the conditions of 200° C. for 60 minutes, and pulled in the vertical direction at a rate of 0.5 mm/s using a bond tester, a value at break is 2.1 MPa or more.

4 . The method according to claim 1 , wherein when the conductive resin composition is cast on a slide glass substrate to a thickness of 50 μm, cured by placing an aluminum cylinder having a diameter of 3 mm thereon under the conditions of 200° C. for 60 minutes, and pulled in the vertical direction at a rate of 0.5 mm/s using a bond tester, a value at break is 2.1 MPa or more.

5 . The method for manufacturing an electronic component according to claim 1 , wherein the thermosetting silicone resin is cured through a dehydration reaction upon heating.

6 . The method for manufacturing an electronic component according to claim 5 , wherein when the conductive resin composition is cast on a slide glass substrate to a thickness of 50 μm, cured by placing an aluminum cylinder having a diameter of 3 mm thereon under the conditions of 200° C. for 60 minutes, and pulled in the vertical direction at a rate of 0.5 mm/s using a bond tester, a value at break is 2.1 MPa or more.

7 . The method for manufacturing an electronic component according to claim 1 , wherein the thermosetting silicone resin has an epoxy group.

8 . The method for manufacturing an electronic component according to claim 1 , wherein the metal powder comprises a flaky metal powder, and a content ratio of the flaky metal powder to the metal powder is 20.0% by mass or more.

9 . The method for manufacturing an electronic component according to claim 1 , wherein the metal powder contains at least one or more powders selected from: one or more powders of silver, copper, nickel, palladium, platinum, gold, and aluminum; a powder containing an alloy of one or more of these metals; a silver-coated copper powder; and a silver-coated nickel powder.

10 . The method for manufacturing an electronic component according to claim 1 , wherein the metal powder comprises a flaky metal powder, and the flaky metal powder has: an aspect ratio of 1.5 to 50.0; a number average particle diameter of 0.1 to 20.0 μm as measured using a scanning electron microscope (SEM); and a specific surface area of 0.5 to 5.0 m 2 /g.

11 . The method for manufacturing an electronic component according to claim 1 , wherein the metal powder comprises a spherical metal powder, a content ratio of the spherical metal powder to the entire metal powder is 80.0% by mass or less, and a content of the flaky metal powder with respect to the entire metal powder is 20.0% by mass or more.

12 . The method for manufacturing an electronic component according to claim 11 , wherein the metal powder comprises a spherical metal powder, and the spherical metal powder has: a volume-based cumulative 50% particle diameter (D 50 ) of 0.01 to 7.0 μm; and a specific surface area of 0.2 to 3.0 m 2 /g.

13 . The method for manufacturing an electronic component according to claim 1 , wherein a content ratio of the thermosetting silicone resin to a total resin component ((silicone resin/total resin)×100) is 70.0% by mass or more in the conductive resin composition containing the thermosetting silicone resin.

Assignees

• Shoei Chemical Ind Co

Inventors

• ESAKI Soichiro

Classifications

• H01G9/0425

  specially adapted for cathode · CPC title

• H01G9/012

  specially adapted for solid capacitors · CPC title

• H01G4/30

  Stacked capacitors (H01G4/33 takes precedence) · CPC title

• H01G9/055

  Etched foil electrodes · CPC title

• H01G4/2325

  characterised by the material of the terminals · CPC title