Thin-film structure and semiconductor device comprising the same

Patent metadata

Field	Value
Publication number	US-12573522-B2
Application number	US-202217897519-A
Country	US
Kind code	B2
Filing date	Aug 29, 2022
Priority date	Mar 7, 2022
Publication date	Mar 10, 2026
Grant date	Mar 10, 2026

Abstract

A thin-film structure and a semiconductor device including the same are provided. The thin-film structure includes: a base layer; and a dielectric layer on the base layer, the dielectric layer including crystals including a <11x> (0≤x≤1) crystal orientation in an out-of-plane direction of the base layer and having an orthorhombic crystal structure of an oIV phase (space group: Pmn21).

First claim

What is claimed is:

1 . A thin-film structure comprising:
a base layer; and a dielectric layer on the base layer, the dielectric layer including crystals including a <11x> (0≤x≤1) crystal orientation in an out-of-plane direction of the base layer and having an orthorhombic crystal structure of an oIV phase (space group: Pmn21).

2 . The thin-film structure of claim 1 , wherein the dielectric layer comprises a ferroelectric material.

3 . The thin-film structure of claim 1 , wherein the dielectric layer comprises at least one of hafnium oxide or hafnium-zirconium oxide.

4 . The thin-film structure of claim 1 , wherein an angle between the <11x> (0≤x≤1) crystal orientation and the out-of-plane direction is about 35° or less.

5 . The thin-film structure of claim 1 , wherein the crystals including the <11x> (0≤x≤1) crystal orientation constitute about 10% or more of all crystals in the dielectric layer.

6 . The thin-film structure of claim 5 , wherein the crystals including the <11x> (0≤x≤1) crystal orientation are dominant among all crystals in the dielectric layer.

7 . The thin-film structure of claim 5 , wherein the crystals including a <111> crystal orientation are dominant among all crystals in the dielectric layer.

8 . The thin-film structure of claim 1 , wherein a thickness of the dielectric layer is about 0.1 nm or more and about 20 nm or less.

9 . The thin-film structure of claim 8 , wherein the thickness of the dielectric layer is about 5 nm or less.

10 . The thin-film structure of claim 1 , wherein the dielectric layer is doped with a dopant including at least one of Zr, La, Y, Gd, Si, or Al.

11 . The thin-film structure of claim 1 , wherein an effective polarization of the dielectric layer in the out-of-plane direction is about 25 μC/cm 2 or more and about 50 μC/cm 2 or less.

12 . The thin-film structure of claim 1 , wherein the crystals including the <11x> (0≤x≤1) crystal orientation and the orthorhombic crystal structure of the oIV phase (space group: Pmn21) are dominant among all crystals in the dielectric layer.

13 . An electronic device comprising the thin-film structure of claim 1 .

14 . The electronic device of claim 13 , comprising:
a first electrode; a second electrode spaced apart from the first electrode; and the dielectric layer between the first electrode and the second electrode, wherein one of the first electrode or the second electrode is the base layer.

15 . The electronic device of claim 14 , further comprising:
a paraelectric layer between the first electrode and the second electrode.

16 . The electronic device of claim 15 , wherein the paraelectric layer is between the dielectric layer and the base layer.

17 . The electronic device of claim 16 , wherein the paraelectric layer comprises at least one of aluminum oxide (Al2O3), lanthanum oxide (La2O3), yttrium oxide (Y2O3), or silicon oxide (SiO2).

18 . The electronic device of claim 14 , wherein at least one of the first electrode or the second electrode comprises a semiconductor material.

19 . The electronic device of claim 18 , wherein the electrode including the semiconductor material comprises a source and a drain.

20 . A semiconductor apparatus comprising the electronic device of claim 13 .

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Sangjun
• Nam Gabjin
• Lee Eunha
• Lee Hyangsook
• Kuh Bongjin
• Kim Junghwa

Classifications

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6735

  having gates fully surrounding the channels, e.g. gate-all-around · CPC title

• H10D30/68

  Floating-gate IGFETs · CPC title

• H10D30/62

  Fin field-effect transistors [FinFET] · CPC title

• H10D64/691

  comprising metallic compounds, e.g. metal oxides or metal silicates  (insulators comprising nitrogen H10D64/693) · CPC title