Bright silver based quaternary nanostructures

US12570899B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12570899-B2
Application numberUS-202418620774-A
CountryUS
Kind codeB2
Filing dateMar 28, 2024
Priority dateJun 20, 2019
Publication dateMar 10, 2026
Grant dateMar 10, 2026

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.

First claim

Opening claim text (preview).

What is claimed is: 1 . A method of making nanostructures, the method comprising: (a) reacting Ga (acetylacetonate) 3, InCl3, and a ligand at a temperature sufficient to give an In—Ga reagent; (b) reacting the In—Ga reagent with Ag2S nanostructures at a temperature sufficient to make AIGS nanostructures; (c) reacting the AIGS nanostructures with an oxygen-free Ga salt in a solvent containing a ligand at a temperature sufficient to form AIGS/AGS core-shell nanostructures. 2 . The method of claim 1 , wherein the nanostructures comprise Ag, In, Ga, and S (AIGS) and a shell comprising Ag, Ga and S (AGS), wherein the nanostructures have a peak emission wavelength (PWL) in a range of 480 to 545 nanometers, wherein at least 80% of the emission is band-edge emission, and wherein the nanostructures exhibit a quantum yield (QY) of 80 to 99.9%. 3 . The method of claim 1 , wherein the ligand is an alkylamine. 4 . The method of claim 3 , wherein the alkylamine is oleylamine. 5 . The method of claim 1 , wherein the solvent is octadecene, squalane, dibenzylether or xylene. 6 . The method of claim 1 , wherein the temperature sufficient in (a) is 100 to 280° C.; the temperature sufficient in (b) is 150 to 260° C.; and the temperature sufficient in (c) is 170 to 280° C. 7 . The method of claim 1 , wherein the oxygen-free Ga salt is GaX3, wherein the X is selected from at least one of the group of F, Cl, or Br.

Assignees

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Classifications

  • Nanostructured additives · CPC title

  • Additives being defined by their diameter · CPC title

  • Ingredients treated with inorganic substances · CPC title

  • Manufacture of films or sheets · CPC title

  • Ceramic · CPC title

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What does patent US12570899B2 cover?
Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.
Who is the assignee on this patent?
Shoei Chemical Ind Co
What technology area does this patent fall under?
Primary CPC classification C09K11/02. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Mar 10 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).