Semiconductor nanoparticles, production method thereof, and light-emitting device
US-2021083146-A1 · Mar 18, 2021 · US
US12570899B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12570899-B2 |
| Application number | US-202418620774-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 28, 2024 |
| Priority date | Jun 20, 2019 |
| Publication date | Mar 10, 2026 |
| Grant date | Mar 10, 2026 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Disclosed are nanostructures comprising Ag, In, Ga, and S and a shell comprising Ag, Ga and S, wherein the nanostructures have a peak wavelength emission of 480-545 nm and wherein at least about 80% of the emission is band-edge emission. Also disclosed are methods of making the nanostructures.
Opening claim text (preview).
What is claimed is: 1 . A method of making nanostructures, the method comprising: (a) reacting Ga (acetylacetonate) 3, InCl3, and a ligand at a temperature sufficient to give an In—Ga reagent; (b) reacting the In—Ga reagent with Ag2S nanostructures at a temperature sufficient to make AIGS nanostructures; (c) reacting the AIGS nanostructures with an oxygen-free Ga salt in a solvent containing a ligand at a temperature sufficient to form AIGS/AGS core-shell nanostructures. 2 . The method of claim 1 , wherein the nanostructures comprise Ag, In, Ga, and S (AIGS) and a shell comprising Ag, Ga and S (AGS), wherein the nanostructures have a peak emission wavelength (PWL) in a range of 480 to 545 nanometers, wherein at least 80% of the emission is band-edge emission, and wherein the nanostructures exhibit a quantum yield (QY) of 80 to 99.9%. 3 . The method of claim 1 , wherein the ligand is an alkylamine. 4 . The method of claim 3 , wherein the alkylamine is oleylamine. 5 . The method of claim 1 , wherein the solvent is octadecene, squalane, dibenzylether or xylene. 6 . The method of claim 1 , wherein the temperature sufficient in (a) is 100 to 280° C.; the temperature sufficient in (b) is 150 to 260° C.; and the temperature sufficient in (c) is 170 to 280° C. 7 . The method of claim 1 , wherein the oxygen-free Ga salt is GaX3, wherein the X is selected from at least one of the group of F, Cl, or Br.
Nanostructured additives · CPC title
Additives being defined by their diameter · CPC title
Ingredients treated with inorganic substances · CPC title
Manufacture of films or sheets · CPC title
Ceramic · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.