Process for producing silicon-containing materials in a stirred-tank reactor

Patent metadata

Field	Value
Publication number	US-12570533-B2
Application number	US-202118691509-A
Country	US
Kind code	B2
Filing date	Dec 20, 2021
Priority date	Dec 20, 2021
Publication date	Mar 10, 2026
Grant date	Mar 10, 2026

Abstract

A process for producing silicon-containing materials. Where the silicon-containing materials are produced by thermal decomposition of silicon precursors in the presence of porous particles and silicon is deposited within pores and on a surface of the porous particles. The thermal decomposition of the silicon precursors takes place in the reaction zone of a gas-traversed reactor and the particles are circulated in the reaction zone during the thermal decomposition by using a stirrer which is close-clearance in the heated regions and the stirring mechanism is in close-clearance in accordance with equation 1

W
⁡
(
h
)

=

u
R

(
h
)

u
B

(
h
)

.

(
1
)

First claim

The invention claimed is:

1 . A process for producing silicon-containing materials, comprising:
thermal decomposition of silicon precursors in the presence of porous particles, wherein silicon is deposited in pores and on a surface of the porous particles;
wherein the thermal decomposition of the silicon precursors takes place in a reaction zone of a gas-traversed reactor and the porous particles are circulated in the reaction zone during the thermal decomposition by using a stirring mechanism which is close-clearance in heated regions of the reaction zone;
wherein the reaction zone is the region in the reactor in which a stirred particle bed is contacted with the silicon precursors and the precursor is decomposed;
wherein the stirring mechanism is in close-clearance in accordance with equation 1

W
⁡
(
h
)

=

u
R

(
h
)

u
B

(
h
)

(
1
)

wherein for half of all values of h the close clearance W(h) in the reaction zone is W(h 50% ) >0.95; and
wherein u R (h)=the outer circumference of the stirring mechanism in the sectional face at the height coordinate h and u B (h)=the inner circumference of the reactor in the sectional face at the height coordinate h.

2 . The process of claim 1 , wherein the reaction zone of the reactor is rotationally symmetrical;
wherein the stirring mechanism is close-clearance if in equation 1

W
⁡
(
h
)

=

u
R

(
h
)

u
B

(
h
)

(
1
)

wherein W(h)=the close clearance of a stirring mechanism in a rotationally symmetrical reactor, defined as the quotient of the circumferences of two planar sectional faces perpendicular to the rotational axis of two rotational faces;
wherein h represents the height coordinate;
wherein u R (h)=the circumference of a circular inner sectional face calculated according to equation 2

u
R

(
h
)

=

2
⁢
π
⁢

r
R

(
h
)

(
2
)

wherein at multiple arbitrary points h of the rotational face perpendicular to the rotational axis through a planar section;
wherein r R (h)=the distance from the rotational axis to the the circular inner sectional face;

wherein the stirring mechanism includes all components attached thereto;
wherein u B (h)=the circumference of a circular outer rotational face calculated according to equation 3

u
B

(
h
)

=

2
⁢
π
⁢

r
B

(
h
)

(
3
)

wherein at each arbitrary point h of the rotational face perpendicular to the rotational axis through a planar section, said rotational face being formed by rotation of the circular outer rotational face of the reactor about the rotational axis;
wherein r B (h)=the distance of the circular outer rotational face of the reactor to the rotational axis; and

wherein for half of all values of h the close clearance W(h) in the reaction zone must be W(h 50% ) >0.95.

3 . The process of claim 1 , wherein over the course of the deposition of the silicon precursor a metered addition takes place at a rate of 0.1-2 g of Si per cm 3 of pore volume of the porous particles used per hour.

4 . The process of claim 1 , wherein over the course of the deposition the silicon precursor is metered in at a rate of 1-700 kg of Si per m 2 of a largest flow cross-sectional area of the reactor in the reaction zone per hour, and wherein the cross-sectional area is measured for the empty reactor.

5 . The process of claim 1 , wherein the thermal decomposition of the silicon precursors takes place at 0.08 to 5 MPa.

6 . The process of claim 1 , wherein the thermal decomposition of the silicon precursors is carried out at 280 to 900° C.

7 . The process of claim 1 , wherein the stirred particle bed has a bed temperature in the reaction zone of the reactor equipped with

Assignees

• Wacker Chemie Ag

Inventors

• Dräger Christoph
• Becker Moritz
• Fricke Michael
• Kalyakina Alena
• Kleinlein Claudia
• Kneissl Sebastian
• Suckow Sebastian
• Tillmann Jan

Classifications

• H01M4/386

  Silicon or alloys based on silicon · CPC title

• C23C16/56

  After-treatment · CPC title

• C23C16/442

  using fluidised bed process · CPC title

• C23C16/4417

  Methods specially adapted for coating powder · CPC title

• C23C16/24

  Deposition of silicon only · CPC title