Descending etching resistance in advanced substrate patterning

Patent metadata

Field	Value
Publication number	US-12563909-B2
Application number	US-202318139243-A
Country	US
Kind code	B2
Filing date	Apr 25, 2023
Priority date	Aug 4, 2021
Publication date	Feb 24, 2026
Grant date	Feb 24, 2026

Abstract

Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. In one example, a device includes a substrate, pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality of overhang structures. The first sub-pixel includes a first anode, OLED material, a first cathode, and a first encapsulation layer having a gap defined by a first portion of the first encapsulation layer disposed over the first cathode, a second portion of the first encapsulation layer disposed over a sidewall of the body structure, and a third portion of the first encapsulation layer under an underside surface of the top extension of the top structure, the first portion of the first encapsulation layer contacting the third portion of the first encapsulation layer.

First claim

What is claimed is:

1 . A device, comprising:
a substrate; pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device; and a plurality of overhang structures, each overhang structure defined by a top extension of a top structure extending laterally past a body structure, each body structure disposed over an upper surface of each PDL structure, adjacent overhang structures of the plurality overhang structures defining a plurality of sub-pixels including a first sub-pixel; the first sub-pixel comprising:
a first anode;
a first organic light-emitting diode (OLED) material disposed over the first anode and under the adjacent overhang structures;
a first cathode disposed over the first OLED material and under the adjacent overhang structures; and
a first encapsulation layer having:
a first portion of the first encapsulation layer disposed over the first cathode,
a second portion of the first encapsulation layer disposed over a sidewall of the body structure,
a third portion of the first encapsulation layer under an underside surface of the top extension of the top structure,
a fourth portion of the first encapsulation layer disposed over a top surface of the top structure,
a gap defined by the first portion, the second portion, and the third portion, the first portion of the first encapsulation layer contacting the third portion of the first encapsulation layer, and
a space between the fourth portion of the first encapsulation layer and the fourth portion of a second encapsulation layer disposed over the top surface of the top structure.

2 . The device of claim 1 , further comprising:
a second sub-pixel comprising:
a second anode;
a second organic light-emitting diode (OLED) material disposed over and in contact with the second anode and under the adjacent overhang structures;
a second cathode disposed over the second OLED material and under the adjacent overhang structures; and
a second encapsulation layer having the gap defined by the first portion of the second encapsulation layer disposed over the second cathode, the second portion of the second encapsulation layer disposed over the sidewall of the body structure, and the third portion of the second encapsulation layer under the underside surface of the top extension of the top structure, the first portion of the second encapsulation layer contacting the third portion of the second encapsulation layer.

3 . The device of claim 2 , further comprising a third sub-pixel comprising:
a third anode; a third organic light-emitting diode (OLED) material disposed over and in contact with the third anode and under the adjacent overhang structures; a third cathode disposed over the third OLED material and under the adjacent overhang structures; and a third encapsulation layer having the gap defined by the first portion of the third encapsulation layer disposed over the third cathode, the second portion of the third encapsulation layer disposed over the sidewall of the body structure, and the third portion of the third encapsulation layer under the underside surface of the top extension of the top structure, the first portion of the third encapsulation layer contacting the third portion of the third encapsulation layer.

4 . The device of claim 3 , wherein the first encapsulation layer, the second encapsulation layer, and the third encapsulation layer comprise a silicon nitride material, silicon oxynitride material, silicon oxide material, or a combination thereof.

5 . The device of claim 3 , wherein the first encapsulation layer comprises a material different than at least one of the second encapsulation layer or the third encapsulation layer.

6 . The device of claim 1 , wherein the body structure comprises an inorganic material or a metal-containing material.

7 . The device of claim 3 , wherein the first encapsulation layer, the second encapsulation layer, and the third encapsulation layer include at least two layers of a silicon-containing material, the at least two layers of the silicon-containing material of at least one the first encapsulation layer, the second encapsulation layer, and the third encapsulation layer is different than each other.

8 . The device of claim 2 , wherein the first OLED material is disposed over and in contact with the first anode and is disposed under the overhang structures such that the first OLED material contacts the PDL structure and the second OLED material is disposed over and in contact with the second anode and is disposed under the overhang structures such that the second OLED material contacts the PDL structure.

9 . A device, comprising:
a substrate; pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device; and a plurality of overhang structures, each overhang structure defined by a top extension of a top structure extending laterally past a body structure to form an overhang, each body structure disposed over an upper surface of each PDL structure, adjacent overhang structures of the plurality overhang structures defining a plurality of sub-pixels including a first sub-pixel and a second sub-pixel; the first sub-pixel comprising:
a first anode;
a first organic light-emitting diode (OLED) material disposed over the first anode and under the adjacent overhang structures;
a first cathode disposed over the first OLED material and under the adjacent overhang structures; and
a first encapsulation layer having an inner surface and an outer surface, the inner surface contacting the first cathode, a sidewall of the body structure, an underside surface of the top extension of the top structure, and a top surface of the top structure, the outer surface enclosing a void space outside the first encapsulation layer; and
the second sub-pixel comprising:
a second anode;
a second organic light-emitting diode (OLED) material disposed over the second anode and under the adjacent overhang structures;
a second cathode disposed over the second OLED material and under the adjacent overhang structures; and
a second encapsulation layer having the inner surface and outer surface, the inner surface contacting the second cathode, the sidewall of the body structure, the underside surface of the top extension of the top structure, and the outer surface of the first encapsulation layer over the top structure, the outer surface enclosing the void space outside the second encapsulation layer and the inner surface of the second encapsulation layer overlapping the outer surface of the first encapsulation layer over the top structure.

10 . The device of claim 9 , further comprising a third sub-pixel comprising:
a third anode; a third organic light-emitting diode (OLED) material disposed over and in contact with the third anode and under the adjacent overhang structures; a third cathode disposed over the third OLED material and under the adjacent overhang structures and contacting a portion of the overhang structures; and a third encapsulation layer having the inner surface and the outer surface, the inner surface contacting the third cathode, the sidewall of the body structure, and the underside surface of the top extension of the top structure, the outer surface enclosing the void space outside the third encapsulation layer.

11 . The device of claim 10 , wherein the first encapsulation layer, the second encapsulation layer, and the third encapsulation layer comprise a silicon nitride material, silicon oxynitride material, silicon oxide material, or a combination thereof.

12 . The device of claim 9 , wherein the body structure comprises an inorganic material, non-

Assignees

• Applied Materials Inc

Inventors

• Chen Chung-Chia
• Choung Ji Young
• Haas Dieter
• Lin Yu-Hsin
• Lee Jungmin
• Wu Wen-Hao
• Kim Si Kyoung

Classifications

• H10K59/173

  comprising banks or shadow masks · CPC title

• H10K59/873

  Encapsulations · CPC title

• H10K71/164

  using vacuum deposition · CPC title

• H10K59/122 Primary

  Pixel-defining structures or layers, e.g. banks · CPC title