Systems and methods for power module for inverter for electric vehicle

US12562638B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12562638-B2
Application numberUS-202318175240-A
CountryUS
Kind codeB2
Filing dateFeb 27, 2023
Priority dateSep 28, 2022
Publication dateFeb 24, 2026
Grant dateFeb 24, 2026

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A power module includes: a first substrate having an outer surface and an inner surface; a semiconductor die coupled to the inner surface of the first substrate; a second substrate having an outer surface and an inner surface, the semiconductor die being coupled to the inner surface of the second substrate; and a flex circuit coupled to the semiconductor die.

First claim

Opening claim text (preview).

What is claimed is: 1 . A power module, comprising: a first substrate having an outer surface and an inner surface; a semiconductor die electrically coupled to the inner surface of the first substrate; a second substrate having an outer surface and an inner surface, the semiconductor die being electrically coupled to the inner surface of the second substrate, wherein the second substrate includes a middle section between the inner surface and the outer surface, wherein the middle section includes a ceramic and the outer surface and the inner surface of the second substrate include a metal; and a flex circuit electrically coupled to the semiconductor die, wherein the flex circuit is electrically insulated from the inner surface of the first substrate and the inner surface of the second substrate. 2 . The power module of claim 1 , wherein the flex circuit is coupled to the inner surface of the second substrate. 3 . The power module of claim 1 , wherein the flex circuit includes an insulating material and an electrically conductive material, wherein the inner surface of the second substrate is electrically insulated from the electrically conductive material of the flex circuit. 4 . The power module of claim 3 , wherein the electrically conductive material of the flex circuit is coupled to the semiconductor die. 5 . The power module of claim 3 , wherein the semiconductor die includes a gate, wherein the electrically conductive material of the flex circuit is coupled to the gate of the semiconductor die. 6 . The power module of claim 1 , wherein the semiconductor die is coupled to the second substrate, through the flex circuit. 7 . The power module of claim 6 , wherein the semiconductor die includes a source connection, wherein the source connection is coupled to the second substrate, through the flex circuit. 8 . The power module of claim 1 , wherein the semiconductor die includes a gate, wherein electrical connections to the gate are contained only within the flex circuit. 9 . The power module of claim 1 , wherein the semiconductor die includes a gate, wherein electrical connections to the gate, within the power module, are contained solely within the flex circuit. 10 . The power module of claim 1 , wherein the semiconductor die includes a gate, wherein electrical connections to the gate, within the power module, do not extend through any part of the second substrate. 11 . The power module of claim 1 , wherein the first substrate further includes a middle section between the inner surface and the outer surface, wherein the middle section includes a ceramic and the outer surface and the inner surface of the first substrate include a metal. 12 . The power module of claim 11 , wherein the ceramic include silicon nitride. 13 . The power module of claim 1 , further include a first lead coupled to the inner surface of the second substrate. 14 . The power module of claim 1 , wherein the semiconductor die includes a drain, wherein the drain is coupled to the inner surface of the first substrate. 15 . The power module of claim 1 , wherein the semiconductor die includes a source, wherein the source is coupled to the inner surface of the second substrate. 16 . An inverter, comprising the power module of claim 1 . 17 . A vehicle, comprising the inverter of claim 16 . 18 . A power module, comprising: a semiconductor die having a source connection, a drain connection, and a gate; a substrate electrically coupled to the source connection, wherein the substrate has an outer surface and an inner surface, the semiconductor die being electrically coupled to the inner surface of the substrate, wherein the substrate includes a middle section between the inner surface and the outer surface, and wherein the middle section includes a ceramic and the outer surface and the inner surface of the substrate include a metal; and a flex circuit electrically coupled to the gate, wherein electrical connections to the gate, within the power module, are contained solely within the flex circuit. 19 . A power module, comprising: a semiconductor die having a source connection, a drain connection, and a gate; a substrate electrically coupled to the source connection, wherein the substrate has an outer surface and an inner surface, the semiconductor die being electrically coupled to the inner surface of the substrate, wherein the substrate includes a middle section between the inner surface and the outer surface, and wherein the middle section includes a ceramic and the outer surface and the inner surface of the substrate include a metal; and a flex circuit electrically coupled to the gate, wherein electrical connections to the gate, within the power module, do not extend through any part of the substrate.

Assignees

Inventors

Classifications

  • Transistor · CPC title

  • Stacked spaced PCBs; Planar parts of folded flexible circuits having mounted components in between or spaced from each other · CPC title

  • Liquid coolant without phase change · CPC title

  • Heat transfer by conduction from internal heat source to heat radiating structure (H05K7/20909 takes precedence) · CPC title

  • Heat transfer by conduction from internal heat source to heat radiating structure (H05K7/20863 takes precedence) · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US12562638B2 cover?
A power module includes: a first substrate having an outer surface and an inner surface; a semiconductor die coupled to the inner surface of the first substrate; a second substrate having an outer surface and an inner surface, the semiconductor die being coupled to the inner surface of the second substrate; and a flex circuit coupled to the semiconductor die.
Who is the assignee on this patent?
Borgwarner Us Tech Llc
What technology area does this patent fall under?
Primary CPC classification H05K7/20927. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 24 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).