Indium compound, thin-film forming raw material, thin film, and method of producing same

Patent metadata

Field	Value
Publication number	US-12559839-B2
Application number	US-202118039411-A
Country	US
Kind code	B2
Filing date	Nov 30, 2021
Priority date	Dec 4, 2020
Publication date	Feb 24, 2026
Grant date	Feb 24, 2026

Abstract

Provided is an indium compound, which is represented by the following general formula (1):

where R 1 and R 2 each independently represent, for example, an unsubstituted alkyl group having 1 to 5 carbon atoms, R 3 and R 4 each independently represent, for example, a hydrogen atom or an unsubstituted alkyl group having 1 to 5 carbon atoms, and A represents a group represented by the following general formula (L-1) or (L-2):

where R 11 , R 12 , R 13 , R 14 , R 21 and R 22 each independently represent, for example, a hydrogen atom or an unsubstituted alkyl group having 1 to 5 carbon atoms, and represents a bonding position with C in the general formula (1).

First claim

The invention claimed is:

1 . An indium compound, which is represented by the following general formula (1):

where R 1 and R 2 each independently represent an unsubstituted alkyl group having 1 to 5 carbon atoms, or an alkyl group having 1 to 5 carbon atoms that is substituted with a fluorine atom, R 3 and R 4 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, or an alkyl group having 1 to 5 carbon atoms that is substituted with a fluorine atom, provided that R 3 and R 4 are not each a hydrogen atom, and A represents a group represented by the following general formula (L-1) or (L-2):

where R 11 , R 12 , R 13 , R 14 , R 21 , and R 22 each independently represent a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, or an alkyl group having 1 to 5 carbon atoms that is substituted with a fluorine atom, and * represents a bonding position with C in the general formula (1).

2 . A thin-film forming raw material, comprising the indium compound of claim 1 .

3 . A method of producing a thin-film, comprising forming a thin-film containing an indium atom on a surface of a substrate through use of a raw material gas obtained by vaporizing the thin-film forming raw material of claim 2 .

4 . The method of producing a thin-film according to claim 3 , wherein the method comprises:
a step 1 of causing the raw material gas to adsorb to the surface of the substrate to form a precursor thin-film; and a step 2 of causing the precursor thin-film to react with a reactive gas to form the thin-film containing an indium atom on the surface of the substrate.

5 . The method of producing a thin-film according to claim 4 ,
wherein the reactive gas is an oxidizing gas, and wherein the thin-film containing an indium atom is indium oxide.

6 . The method of producing a thin-film according to claim 5 , wherein the oxidizing gas is a gas containing at least one selected from the group consisting of: oxygen; ozone; and water vapor.

7 . The method of producing a thin-film according to claim 4 , wherein the step 2 is performed in a range of from 150° C. to 400° C.

8 . The indium compound according to claim 1 , wherein in the general formula (1), R 3 represents a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, or an alkyl group having 1 to 5 carbon atoms that is substituted with a fluorine atom, and R 4 represents a hydrogen atom, a fluorine atom, an unsubstituted alkyl group having 1 to 5 carbon atoms, or an alkyl group having 1 to 5 carbon atoms that is substituted with a fluorine atom.

Assignees

• Adeka Corp

Inventors

• Takeda Keisuke
• Enzu Masaki

Classifications

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• C07F5/00 Primary

  Compounds containing elements of Groups 3 or 13 of the Periodic Table · CPC title

• C01G15/00

  Compounds of gallium, indium or thallium · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/407 Primary

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title