Perovskite layer, manufacture method for perovskite layer, perovskite layer solar cell, and perovskite layer solar cell assembly

Patent metadata

Field	Value
Publication number	US-12557464-B2
Application number	US-202118029058-A
Country	US
Kind code	B2
Filing date	Oct 13, 2021
Priority date	Nov 25, 2020
Publication date	Feb 17, 2026
Grant date	Feb 17, 2026

Abstract

The present application discloses a perovskite layer, a method for preparing a perovskite layer, a perovskite-layer solar cell and a perovskite-layer-solar-cell assembly, which relates to the technical field of photovoltaics, and is used to prepare a perovskite layer that can completely cover the substrate and has few defects. The method for preparing a perovskite layer includes: providing a substrate; forming perovskite seed crystals on the substrate; soaking the perovskite seed crystals into a perovskite solution; by the effect of the perovskite seed crystals, the perovskite seed crystals growing into a perovskite thin film; and performing annealing treatment to the perovskite thin film, to form the perovskite layer. The perovskite layer and the preparing method thereof according to the present application are used for the fabrication of a solar cell.

First claim

The invention claimed is:

1 . A method for preparing a perovskite layer, comprising:
providing a substrate; forming perovskite seed crystals on the substrate; soaking the perovskite seed crystals into a perovskite solution to grow into a perovskite thin film; and performing annealing treatment to the perovskite thin film, to form the perovskite layer; wherein during the growing of the perovskite seed crystals into the perovskite thin film, a solubility of a perovskite material in the perovskite solution is reduced to facilitate the perovskite material to precipitate from the perovskite solution and supply the perovskite material for the growing of the perovskite seed crystals; or during the growing of the perovskite seed crystals into the perovskite thin film, volatilization of a solvent is accelerated by heating to facilitate the perovskite material to precipitate from the perovskite solution and supply the perovskite material for the growing of the perovskite seed crystals.

2 . The method for preparing a perovskite layer according to claim 1 , wherein the solubility of the perovskite material is reduced by cooling.

3 . The method for preparing a perovskite layer according to claim 2 , wherein a cooling speed of the cooling is 0.1° C./h-10° C./h; and/or
before the cooling, an initial temperature of the perovskite solution is 100° C.-150° C.

4 . The method for preparing a perovskite layer according to claim 1 , wherein
an initial temperature of the perovskite solution is 20° C.-30° C.; and during the growing of the perovskite seed crystals into the perovskite thin film, the heating temperature is 40° C.-100° C.

5 . The method for preparing a perovskite layer according to claim 1 , wherein when the perovskite seed crystals are soaked into the perovskite solution, the perovskite solution is a saturated solution.

6 . The method for preparing a perovskite layer according to claim 1 , wherein the step of forming the perovskite seed crystals on the substrate comprises:
coating a perovskite-precursor solution onto the substrate, and volatilizing a solvent of the perovskite-precursor solution, to form perovskite-seed-crystal intermediates; and performing annealing treatment to the perovskite-seed-crystal intermediates, to form the perovskite seed crystals.

7 . The method for preparing a perovskite layer according to claim 6 , wherein a general formula of the perovskite seed crystals is ABX3;
the perovskite-precursor solution comprises an AX precursor and a BX2 precursor, wherein X is a halogen element; and the perovskite seed crystals are an organic-inorganic hybrid material, and a ratio of an amount of substance of the AX precursor to an amount of substance of the BX2 precursor is (2-15):1, or the perovskite seed crystals are a fully inorganic material, and the ratio of the amount of substance of the AX precursor to the amount of substance of the BX2 precursor is (0.95-1.05):1.

8 . The method for preparing a perovskite layer according to claim 7 , wherein a concentration of the perovskite-precursor solution is less than or equal to 0.1 mol/L; and/or
a duration of the annealing treatment for forming the perovskite seed crystals is 1 min-30 min.

9 . The method for preparing a perovskite layer according to claim 8 , wherein the perovskite seed crystals are an organic-inorganic hybrid material, a temperature of the annealing treatment for forming the perovskite seed crystals is 60° C.-130° C.; or
the perovskite seed crystals are a fully inorganic material, and a temperature of the annealing treatment for forming the perovskite seed crystals is 120° C.-220° C.

10 . The method for preparing a perovskite layer according to claim 1 , wherein a perovskite component of the perovskite seed crystals and a perovskite component of the perovskite solution are the same.

11 . A method for preparing a perovskite layer, comprising:
providing a substrate; forming perovskite seed crystals on the substrate; soaking the perovskite seed crystals into a perovskite solution to grow into a perovskite thin film; and performing annealing treatment to the perovskite thin film, to form the perovskite layer; wherein the perovskite seed crystals are distributed on the substrate in a discrete distribution.

12 . The method for preparing a perovskite layer according to claim 11 , wherein a coverage rate of the perovskite seed crystals on the substrate is 10%-50%, and a particle size of the perovskite seed crystals is 10 nm-200 nm.

13 . A perovskite layer, wherein the perovskite layer comprises perovskite seed crystals and a perovskite thin film; and
a first interface is disposed between the perovskite seed crystals and the perovskite thin film, and the first interface is observable by using a high-resolution scanning electron microscope; wherein the first interface between the perovskite seed crystals and the perovskite thin film further comprises a structure transition layer, wherein a lattice parameter of the structure transition layer changes in a first order, and an atom-arrangement mode of the structure transition layer changes in a second order, wherein the first order refers to an order in which, in a direction further away from the perovskite seed crystals, an initial parameter changes into a second parameter greater than the initial parameter and subsequently changes into the initial parameter, and the second order refers to an order in which, in the direction further away from the perovskite seed crystals, an ordered arrangement changes into an unordered arrangement and subsequently changes into an ordered arrangement.

14 . The perovskite layer according to claim 13 , wherein a thickness of the structure transition layer is greater than or equal to 0.5 nm, and less than or equal to 5 nm.

15 . A perovskite solar cell, wherein the perovskite solar cell comprises the perovskite layer according to claim 13 .

16 . A perovskite-layer-solar-cell assembly, wherein the perovskite-layer-solar-cell assembly comprises the perovskite solar cell according to claim 15 .

17 . The perovskite solar cell according to claim 15 , wherein the first interface between the perovskite seed crystals and the perovskite thin film further comprises a structure transition layer, wherein a lattice parameter of the structure transition layer changes in a first order, and an atom-arrangement mode of the structure transition layer changes in a second order, wherein the first order refers to an order in which, in a direction further away from the perovskite seed crystals, an initial parameter changes into a second parameter greater than the initial parameter and subsequently changes into the initial parameter, and the second order refers to an order in which, in the direction further away from the perovskite seed crystals, an ordered arrangement changes into an unordered arrangement and subsequently changes into an ordered arrangement.

Assignees

• Longi Green Energy Technology Co Ltd

Inventors

• Xie Junjie
• Xu Chen
• Li Zifeng
• Wu Zhao
• Jin Jinling

Classifications

• H10K85/50 Primary

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• C30B33/02

  Heat treatment (C30B33/04, C30B33/06 take precedence) · CPC title

• C30B7/08

  by cooling of the solution · CPC title

• H10K71/15

  characterised by the solvent used · CPC title