Self-assembly of perovskite for fabrication of transparent devices

Patent metadata

Field	Value
Publication number	US-10192689-B2
Application number	US-201615541726-A
Country	US
Kind code	B2
Filing date	Jan 7, 2016
Priority date	Jan 7, 2015
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

Provided is a continuous material pattern, the pattern is selected to have a plurality of material-free voids, the material including at least one perovskite material.

First claim

The invention claimed is:

1. A patterned perovskite material, comprising a plurality of continuous intersecting perovskite line patterns, defining confined regions enclosed by walls of said intersecting line patterns, wherein the confined regions are perovskite-free voids.

2. The patterned material according to claim 1 , the pattern comprising of a continuous perovskite pattern, the pattern being defined by a plurality of intersecting wire-like element(s), said element(s) defining confined regions enclosed by walls of said intersecting wire-like elements, wherein said wire-like elements are of at least one perovskite material.

3. The patterned material according to claim 1 , wherein the pattern is a continuous network or grid (mesh).

4. The patterned material according to claim 3 , wherein material coverage is less than 70% or wherein the pattern is semi-transparent or transparent or wherein the pattern is conductive.

5. The patterned material according to claim 1 , wherein the perovskite material is characterized by the structural motif AMX 3 , having a three-dimensional network of corner-sharing MX 6 octahedra, wherein M is a metal cation that may adopt an octahedral coordination of the X anions, and wherein A is a cation situated in 12-fold coordinated holes between the MX 6 octahedra.

6. The patterned material according to claim 5 , wherein the perovskite material is of the formula AMX 3 or AMX 4 or A 2 MX 4 or A 3 MX 5 or A 2 A′MX 5 or AMX 3-n X′ n , wherein
A and A′ are independently selected from organic cations, metal cations and any combination of such cations;
M is a metal cation or any combination of metal cations;
X and X′ are independently selected from anions and any combination of anions; and
n is between 0 to 3.

7. The patterned material according to claim 1 , wherein the perovskite material is an organic-inorganic perovskite structure.

8. The patterned material according to claim 7 , wherein the organic-inorganic perovskite structure is selected from the group consisting of (R—NH 3 ) 2 MX 4 and (NH—R—NH)MX; wherein X may be Cl −1 , Br −1 , or I −1 .

9. The patterned material according to claim 8 , wherein the perovskite material comprises or is selected from CH 3 NH 3 PbF 3 , CH 3 NH 3 PbCl 3 , CH 3 NH 3 PbI 3 , CH 3 NH 3 PbBr 3 , CH 3 NH 3 PbBrI 2 , CH 3 NH 3 PbBrCl 2 , CH 3 NH 3 PbIBr 2 , CH 3 NH 3 PbICl 2 , CH 3 NH 3 PbClBr 2 and CH 3 NH 3 PbI 2 Cl.

10. The patterned material according to claim 9 , wherein the perovskite material comprises or is selected from the group consisting of CH 3 NH 3 SnICl 2 , CH 3 NH 3 SnBrI 2 , CH 3 NH 3 SnBrCl 2 , CH 3 NH 3 SnF 2 Br, CH 3 NH 3 SnIBr 2 , CH 3 NH 3 SnF 2 I, CH 3 NH 3 SnClBr 2 , CH 3 NH 3 SnI 2 Cl and CH 3 NH 3 SnF 2 Cl.

11. The patterned material according to claim 9 , wherein the perovskite material comprises or is selected from the group consisting of CH 3 NH 3 PbF 3 , CH 3 NH 3 PbCl 3 , CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 .

12. The patterned material according to claim 11 , wherein the perovskite material is CH 3 NH 3 PbI 3 .

13. The patterned material according to claim 1 , wherein the perovskite material is of the formula (NH 2 ═CH—NH 2 ) MX 3 .

14. The patterned material according to claim 13 , wherein the perovskite material comprises or is selected from the group consisting of (NH 2 ═CH—NH 2 )PbBr 3 , (NH 2 ═CH—NH 2 )PbI 3 , (NH 2 ═CH—NH 2 )PbCl 3 , (NH 2 ═CH—NH 2 )PbFCl 2 , (NH 2 ═CH—NH 2 )PbBrCl 2 , (NH 2 ═CH—NH 2 )PbICl 2 , (NH 2 ═CH—NH 2 )PbFCl 2 , (NH 2 ═CH—NH 2 )PbFBr 2 , (NH 2 ═CH—NH 2 )PbFI 2 and (NH 2 ═CH—NH 2 )PbIBr 2 .

15. A process for producing a continuous perovskite pattern, the process comprising:
providing a substrate, the substrate having on at least one region thereof a patterning device defined by a plurality of intersecting wire-like element(s), said element(s) defining confined regions (material-free voids) enclosed by walls of said intersecting wire-like elements (a mesh);
placing a solution of a perovskite material or a solution of perovskite precursors in at least one confined region on said substrate;
allowing migration of the perovskite material or perovskite precursors to the walls of said confined region (voids) to form a pattern having substantially the contour of said confined region; and
optionally annealing said pattern.

16. An element comprising a substrate, at least one continuous perovskite pattern according to claim 1 , at least one conductive layer, and optionally at least one additional layer selected from a scaffold structure layer, at least one hole conductive layer, and at least one additional layer.

17. An element comprising a substrate, a scaffold structure layer, at least one continuous perovskite pattern according to claim 1 , at least one conductive layer, and optionally at least one additional layer, wherein said element is devoid of a hole conductive layer.

18. An element comprising a substrate, a scaffold structure layer, at least one continuous perovskite pattern according to claim 1 , a conductive layer, optionally at least one hole conductive layer, and optionally at least one additional layer, wherein the element is semi-transparent or transparent.

19. A device comprising a perovskite pattern according to claim 1 .

Assignees

• Yissum Res Dev Co Of Hebrew Univ Jerusalem Ltd
• Yissum Res Dev Co Of Hebrew Univ Jerusalem Ltd

Inventors

• Etgar Lioz
• Magdassi Shlomo
• Aharon Sigalit
• Layani Michael

Classifications

• H01L51/0077

  Electricity · mapped topic

• H01G9/2009

  Solid electrolytes · CPC title

• H01L51/4213

  Electricity · mapped topic

• H01L51/4226

  Electricity · mapped topic

• H01G9/2045 Primary

  comprising a semiconductor electrode comprising elements of the fourth group of the Periodic Table with or without impurities, e.g. doping materials · CPC title