Adaptive time sense parameters and overdrive voltage parameters for wordlines at corner temperatures in a memory sub-system

Patent metadata

Field	Value
Publication number	US-12554435-B2
Application number	US-202418671855-A
Country	US
Kind code	B2
Filing date	May 22, 2024
Priority date	Aug 17, 2022
Publication date	Feb 17, 2026
Grant date	Feb 17, 2026

Abstract

A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a memory access operation on a set of cells associated with a wordline of the memory device; determining that a temperature associated with the memory device satisfies a threshold criterion; determining a memory access operation type of the memory access operation; and performing the memory access operation on the set of cells associated with the wordline using a first time sense parameter, wherein the first time sense parameter corresponds to the memory access operation type and the temperature associated with the memory device.

First claim

What is claimed is:

1 . A system comprising:
a memory device; and a processing device, operatively coupled with the memory device, to perform operations comprising: receiving a request to perform a memory access operation on a set of cells addressable by a wordline of the memory device; identifying a first time sense parameter associated with the wordline, wherein the first time sense parameter is associated with the wordline based on a read window budget (RWB) associated with the wordline, and wherein the first time sense parameter corresponds to a memory access operation type of the memory access operation and a temperature associated with the memory device; and performing the memory access operation on the set of cells addressable by the wordline using the first time sense parameter.

2 . The system of claim 1 , wherein the processing device is to perform operations further comprising:
determining that the temperature associated with the memory device does not satisfy a threshold criterion; and performing the memory access operation on the set of cells addressable by the wordline using a default time sense parameter.

3 . The system of claim 1 , wherein the processing device is to perform operations further comprising:
determining that the memory access operation type comprises a program verify operation.

4 . The system of claim 1 , wherein the processing device is to perform operations further comprising:
determining that the memory access operation type comprises a read operation.

5 . The system of claim 4 , wherein performing the memory access operation on the set of cells addressable by the wordline further comprises using a first overdrive voltage parameter, wherein the first overdrive voltage parameter corresponds to the memory access operation type and the temperature associated with the memory device.

6 . The system of claim 1 , wherein the processing device is to perform operations further comprising:
determining that an adaptive time sense configuration is enabled.

7 . The system of claim 1 , wherein the processing device is to perform operations further comprising:
determining that an adaptive time sense configuration is disabled; and performing the memory access operation on the set of cells addressable by the wordline using a default time sense parameter.

8 . A method comprising:
receiving a request to perform a memory access operation on a set of cells addressable by a wordline of a memory device; identifying a first time sense parameter associated with the wordline, wherein the first time sense parameter is associated with the wordline based on a read window budget (RWB) associated with the wordline, and wherein the first time sense parameter corresponds to a memory access operation type of the memory access operation and a temperature associated with the memory device; and performing the memory access operation on the set of cells addressable by the wordline using the first time sense parameter and a first overdrive voltage parameter, wherein the first overdrive voltage parameter corresponds to the memory access operation type and the temperature associated with the memory device.

9 . The method of claim 8 , further comprising:
determining that the temperature associated with the memory device does not satisfy a threshold criterion; and performing the memory access operation on the set of cells addressable by the wordline using a default time sense parameter.

10 . The method of claim 8 , further comprising:
determining that the memory access operation type comprises a program verify operation; and responsive to determining that the memory access operation type comprises the program verify operation, performing the memory access operation on the set of cells addressable by the wordline using a second time sense parameter, wherein the second time sense parameter corresponds to the memory access operation type and the temperature associated with the memory device.

11 . The method of claim 8 , further comprising:
determining that an adaptive time sense configuration is enabled.

12 . The method of claim 8 , further comprising:
determining that an adaptive time sense configuration is disabled; and performing the memory access operation on the set of cells addressable by the wordline using a default time sense parameter.

13 . The method of claim 8 , further comprising:
determining that an adaptive overdrive voltage configuration is enabled.

14 . The method of claim 8 , further comprising:
determining that an adaptive overdrive voltage configuration is disabled; and performing the memory access operation on the set of cells addressable by the wordline using a default overdrive voltage parameter.

15 . A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
receiving a request to perform a memory access operation on a set of cells addressable by a wordline of a memory device; identifying a first time sense parameter associated with the wordline, wherein the first time sense parameter is associated with the wordline based on a read window budget (RWB) associated with the wordline, and wherein the first time sense parameter corresponds to a memory access operation type of the memory access operation and a temperature associated with the memory device; and performing the memory access operation on the set of cells addressable by the wordline using the first time sense parameter.

16 . The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is to perform operations further comprising:
determining that the temperature associated with the memory device does not satisfy a threshold criterion; and performing the memory access operation on the set of cells addressable by the wordline using a default time sense parameter.

17 . The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is to perform operations further comprising:
determining that the memory access operation type comprises a program verify operation.

18 . The non-transitory computer-readable storage medium of claim 17 , wherein to perform the memory access operation on the set of cells addressable by the wordline, the processing device is to perform operations further comprising using a first overdrive voltage parameter, wherein the first overdrive voltage parameter corresponds to the memory access operation type and the temperature associated with the memory device.

19 . The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is to perform operations further comprising:
determining that an adaptive time sense configuration is enabled.

20 . The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is to perform operations further comprising:
determining that an adaptive time sense configuration is disabled; and performing the memory access operation on the set of cells addressable by the wordline using a default time sense parameter.

Assignees

• Micron Technology Inc

Inventors

• Zhou Zhenming
• Lu Ching-Huang
• Lang Murong

Classifications

• G06F3/0604

  Improving or facilitating administration, e.g. storage management · CPC title

• G06F3/0679

  Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP] · CPC title

• G11C16/10

  Programming or data input circuits · CPC title

• G11C16/26

  Sensing or reading circuits; Data output circuits · CPC title

• G11C16/08

  Address circuits; Decoders; Word-line control circuits · CPC title