Adaptive time sense parameters and overdrive voltage parameters for respective groups of wordlines in a memory sub-system

Patent metadata

Field	Value
Publication number	US-12554403-B2
Application number	US-202418662940-A
Country	US
Kind code	B2
Filing date	May 13, 2024
Priority date	Aug 17, 2022
Publication date	Feb 17, 2026
Grant date	Feb 17, 2026

Abstract

A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a memory access operation on a set of cells associated with a wordline of the memory device; determining that the wordline is disposed on a first deck of the memory deck; responsive to determining that the wordline is disposed on the first deck, determining that the wordline is associated with a first group of wordlines associated with the first deck; and responsive to determining that the wordline is associated with the first group of wordlines associated with the first deck, performing the memory access operation on the set of cells connected to the wordline using a first time sense parameter, wherein the first time sense parameter corresponds to the first group of wordlines associated with the first deck.

First claim

What is claimed is:

1 . A system comprising:
a memory device; and a processing device, operatively coupled with the memory device, to perform operations comprising:
determining that a wordline is disposed on a first deck of the memory device, wherein the wordline is included in a first group of wordlines;
identifying a first time sense parameter assigned to the first group of wordlines, wherein the first time sense parameter is assigned to the first group of wordlines based on a read window budget (RWB) associated with the first group of wordlines; and
performing a memory access operation on a set of cells addressable by the wordline using the first time sense parameter.

2 . The system of claim 1 , wherein the processing device is to perform operations further comprising:
determining that the wordline is associated with a second group of wordlines associated with the first deck; and responsive to determining that the wordline is associated with the second group of wordlines associated with the first deck, performing the memory access operation on the set of cells associated with the wordline using a second time sense parameter, wherein the second time sense parameter corresponds to the second group of wordlines associated with the first deck.

3 . The system of claim 1 , wherein the processing device is to perform operations further comprising:
determining that the wordline is disposed on a second deck of the memory device; responsive to determining that the wordline is disposed on the second deck, determining that the wordline is associated with a first group of wordlines associated with the second deck; and responsive to determining that the wordline is associated with the first group of wordlines associated with the second deck, performing the memory access operation on the set of cells associated with the wordline using a third time sense parameter, wherein the third time sense parameter corresponds to the first group of wordlines associated with the second deck.

4 . The system of claim 3 , wherein the processing device is to perform operations further comprising:
determining that the wordline is associated with a second group of wordlines associated with the second deck; and responsive to determining that the wordline is associated with the second group of wordlines associated with the second deck, performing the memory access operation on the set of cells associated with the wordline using a fourth time sense parameter, wherein the fourth time sense parameter corresponds to the second group of wordlines associated with the second deck.

5 . The system of claim 1 , wherein the memory access operation comprises a program verify operation or a read operation.

6 . The system of claim 1 , wherein the processing device is to perform operations further comprising:
determining that an adaptive time sense configuration is enabled.

7 . The system of claim 1 , wherein the processing device is to perform operations further comprising:
determining that an adaptive time sense configuration is disabled; and performing the memory access operation on the set of cells associated with the wordline using a default time sense parameter.

8 . A method comprising:
determining that a wordline is disposed on a first deck of a memory device, wherein the wordline is included in a first group of wordlines; identifying a first overdrive voltage parameter assigned to the first group of wordlines, wherein the first overdrive voltage parameter is assigned to the first group of wordlines based on a read window budget (RWB) associated with the first group of wordlines; and performing a memory access operation on a set of cells addressable by the wordline using the first overdrive voltage parameter.

9 . The method of claim 8 , further comprising:
determining that the wordline is associated with a second group of wordlines associated with the first deck; and responsive to determining that the wordline is associated with the second group of wordlines associated with the first deck, performing the memory access operation on the set of cells associated with the wordline using a second overdrive voltage parameter, wherein the second overdrive voltage parameter corresponds to the second group of wordlines associated with the first deck.

10 . The method of claim 8 , further comprising:
determining that the wordline is disposed on a second deck of the memory device; responsive to determining that the wordline is disposed on the second deck, determining that the wordline is associated with a first group of wordlines associated with the second deck; and responsive to determining that the wordline is associated with the first group of wordlines associated with the second deck, performing the memory access operation on the set of cells associated with the wordline using a third overdrive voltage parameter, wherein the third overdrive voltage parameter corresponds to the first group of wordlines associated with the second deck.

11 . The method of claim 10 , further comprising:
determining that the wordline is associated with a second group of wordlines associated with the second deck; and responsive to determining that the wordline is associated with the second group of wordlines associated with the second deck, performing the memory access operation on the set of cells associated with the wordline using a fourth overdrive voltage parameter, wherein the fourth overdrive voltage parameter corresponds to the second group of wordlines associated with the second deck.

12 . The method of claim 8 , wherein the memory access operation comprises a read operation.

13 . The method of claim 8 , further comprising:
determining that an adaptive overdrive voltage configuration is enabled.

14 . The method of claim 8 , further comprising:
determining that an adaptive overdrive voltage configuration is disabled; and performing the memory access operation on the set of cells associated with the wordline using a default overdrive voltage parameter.

15 . A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
determining that a wordline is disposed on a first deck of a memory device, wherein the wordlines is included in a first group of wordlines; identifying a first time sense parameter assigned to the first group of wordlines, wherein the first time sense parameter is assigned to the first group of wordlines based on a read window budget (RWB) associated with the first group of wordlines; and performing a memory access operation on a set of cells addressable by the wordline using the first time sense parameter.

16 . The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is to perform operations further comprising:
determining that the wordline is associated with a second group of wordlines associated with the first deck; and responsive to determining that the wordline is associated with the second group of wordlines associated with the first deck, performing the memory access operation on the set of cells associated with the wordline using a second time sense parameter, wherein the second time sense parameter corresponds to the second group of wordlines associated with the first deck.

17 . The non-transitory computer-readable storage medium of claim 15 , wherein the processing device is to perform operations further comprising:
determining that the wordline is disposed on a second deck of the

Assignees

• Micron Technology Inc

Inventors

• Zhou Zhenming
• Lu Ching-Huang
• Lang Murong

Classifications

• G06F3/0679 Primary

  Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP] · CPC title

• G06F3/0629

  Configuration or reconfiguration of storage systems · CPC title

• G11C8/08 Primary

  Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines · CPC title

• G11C8/14

  Word line organisation; Word line lay-out · CPC title

• G06F3/0644

  Management of space entities, e.g. partitions, extents, pools · CPC title