Planarization process, apparatus and method of manufacturing an article

Patent metadata

Field	Value
Publication number	US-12550688-B2
Application number	US-202117564710-A
Country	US
Kind code	B2
Filing date	Dec 29, 2021
Priority date	Dec 29, 2021
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

A planarization system is provided. The planarization system includes a first substrate chuck which holds the substrate during a planarization step, and a second substrate chuck which holds the substrate with a non-flat configuration during a separation step.

First claim

What is claimed is:

1 . A planarization system comprising:
a first substrate chuck configured to hold a substrate during a planarization step; and a second substrate chuck configured to hold the substrate with a radially symmetric non-flat configuration around a center of the second substrate chuck during a separation step, wherein the second substrate chuck is more flexible than the first substrate chuck.

2 . The planarization system of claim 1 , wherein the first substrate chuck has a plurality of contact points to be in contact with a wafer to be held by the first substrate chuck.

3 . The planarization system of claim 2 , wherein the first substrate chuck has a global flatness no larger than 50 nm across the plurality of contact points.

4 . The planarization system of claim 1 , wherein the first substrate chuck is configured to maintain a flatness of the wafer while minimizing backside contact area during the planarization step.

5 . The planarization system of claim 1 , wherein the first substrate chuck is made of Al 2 O 3 , SiC, Sapphire, or other ceramic materials.

6 . The planarization system of claim 1 , wherein the second substrate chuck is made of a compliant material.

7 . The planarization system of claim 1 , wherein the first substrate chuck has a diameter no smaller than a diameter of the wafer to support the wafer from edge to edge during planarization.

8 . The planarization system of claim 1 , wherein the second substrate chuck has a diameter smaller than a diameter of the wafer.

9 . The planarization system of claim 1 , the second substrate chuck is configured to maximize a holding force at an edge of the wafer during the separation step.

10 . The planarization system of claim 1 , wherein the second wafer chuck includes a predetermined number of pins and lands, and each of the pins and lands has a geometry and a surface area predetermined for separation.

11 . The planarization system of claim 1 , wherein the second substrate chuck has a dome shape.

12 . The planarization system of claim 1 , further comprising a rotary stage on which the first substrate chuck and the second substrate chuck rotate to align with a planarization head, respectively.

13 . The planarization system of claim 1 , further comprising a three-position rotary stage configured to carry and rotate the first substrate chuck and the second substrate chuck on a plane.

14 . The planarization system of claim 13 , wherein the first substrate chuck, the second substrate chuck, and a superstrate loading station are arranged in a triangle on the plane.

15 . The planarization system of claim 1 , further comprising a linear stage on which the first substrate chuck and the second substrate chuck move linearly to align with the planarization head, respectively.

16 . A planarization system comprising:
a first substrate chuck configured to hold a substrate during a planarization step; a second substrate chuck configured to hold the substrate with a non-flat configuration during a separation step; and a rotary stage on which the first substrate chuck and the second substrate chuck rotate to align with a planarization head, respectively.

17 . The planarization system of claim 16 , wherein the second substrate chuck has a thickness largest at a center thereof and thinnest at a periphery thereof.

18 . The planarization system of claim 16 , wherein the second substrate chuck has a surface to be in contact with the wafer, the surface has a sequence of steps with gradually decreasing heights from a center of the second substrate chuck.

19 . The planarization system of claim 16 , wherein the second substrate chuck includes a recessed center, a first land, a recessed ring, and a second land arranged from a center to a periphery thereof.

20 . A method comprising:
holding a substrate on a first substrate chuck, bringing a material on the substrate held by the first substrate chuck into contact with a planarization plate, moving the substrate and the planarization plate contacting with each other to a second substrate chuck from the first substrate chuck, and separating the planarization plate from the material on the substrate held by the second substrate chuck, wherein the separating includes holding the substrate with the second substrate chuck such that the second substrate chuck has a radially symmetric non-flat configuration around a center of the second substrate chuck, and wherein the second substrate chuck is more flexible than the first substrate chuck.

21 . The method of claim 20 , further comprising holding another substrate on the first substrate chuck during the moving or the separating.

22 . A method of manufacturing an article, comprising:
holding a substrate on a first substrate chuck, bringing a material on the substrate held by the first substrate chuck into contact with a planarization plate, moving the substrate and the planarization plate contacting with each other to a second substrate chuck from the first substrate chuck, separating the planarization plate from the material on the substrate held by the second substrate chuck, and manufacturing the article by processing the substrate, wherein the separating includes holding the substrate with the second substrate chuck such that the second substrate chuck has a radially symmetric non-flat configuration around a center of the second substrate chuck, and wherein the second substrate chuck is more flexible than the first substrate chuck.

Assignees

• Canon Kk

Inventors

• Shackleton Steven C
• Bamesberger Seth J

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P72/7608

  characterised by a plurality of separate clamping members, e.g. clamping fingers · CPC title

• H10P72/78

  using vacuum or suction, e.g. Bernoulli chucks · CPC title

• H10P72/72 Primary

  using electrostatic chucks · CPC title