Susceptor and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-12550672-B2
Application number	US-202018042577-A
Country	US
Kind code	B2
Filing date	Sep 15, 2020
Priority date	Sep 9, 2020
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

Disclosed are a susceptor for enabling uniform plasma treatment over the entire surface of a wafer, and a manufacturing method therefor. Provided is the susceptor comprising: a dielectric plate having an upper surface on which a wafer is loaded, and a lower surface facing same; and an inner RF electrode and an outer RF electrode that are buried in the dielectric plate, wherein, with respect to the lower surface, the height of a first plane in which the inner RF electrode is buried is less than the height of a second plane in which the outer RF electrode is buried.

First claim

The invention claimed is:

1 . A susceptor comprising:
a dielectric plate including an upper surface on which a wafer is loaded, and a lower surface opposite the upper surface, wherein the dielectric plate comprises an upper pre-sintered body stacked on a lower pre-sintered body, wherein the lower pre-sintered body comprises a plurality of stepped surface structures that serve as a fixing frame for stacking the upper pre-sintered body; and an inner RF electrode formed on the lower pre-sintered body and an outer RF electrode formed on the upper pre-sintered body; a connection member for power supply to the outer RF electrode, wherein the connection member is in the form of an elongate plate processed to have a “C” shape, wherein, with respect to the lower surface, a height of a first plane at which the inner RF electrode is located is less than a height of a second plane at which the outer RF electrode is located.

2 . The susceptor of claim 1 , wherein
the upper surface includes a first surface on which a wafer is loaded and a second surface surrounding the first surface, and a height of the first surface is lower than a height of the second surface with respect to the lower surface.

3 . The susceptor of claim 2 , wherein a first upper dielectric layer thickness (udt1) from the first plane to the first surface is substantially the same as a second upper dielectric layer thickness (udt2) from the second plane to the second surface.

4 . The susceptor of claim 2 , wherein a first upper dielectric layer thickness (udt1) from the first plane to the first surface and a second upper dielectric layer thickness (udt2) from the second plane to the second surface satisfy a relationship of −0.5<(udt1−udt2)/udt1<0.5.

5 . The susceptor of claim 3 , wherein a ratio of an electrode gap (δ) defined as a difference between an inner circumference radius (r3) of the outer RF electrode and a radius (r1) of the inner RF electrode with respect to a radius (r1) of an inner electrode satisfies a relationship of 0.9≤r3/r1≤1.0.

6 . The susceptor of claim 1 , wherein the inner RF electrode and the outer RF electrode are one of a sheet-type or a mesh-type.

7 . The susceptor of claim 1 , wherein the connection member is one of a sheet-type or a rod-type.

8 . The susceptor of claim 1 , further comprising:
a heating element disposed within the plate.

9 . The susceptor of claim 1 , further comprising:
a clamping electrode disposed within the plate.

10 . The susceptor of claim 1 , wherein a height difference between the first plane and the second plane is 0.1 to 2.0 mm.

11 . The susceptor of claim 4 , wherein a ratio of an electrode gap 8 defined as a difference between an inner circumference radius (r3) of the outer RF electrode and a radius (r1) of the inner RF electrode with respect to a radius (r1) of an inner electrode satisfies a relationship of 0.9≤r3/r1≤1.0.

12 . The susceptor of claim 1 , wherein opposite end portions of the connection member are bent.

Assignees

• Samsung Electronics Co Ltd
• Mico Ceram Ltd

Inventors

• Jung Myungsub
• Seo Jun Won
• Kim Sungyeol
• Lim Sungyong
• Jin Hadong
• Choi Jaehyun

Classifications

• H10P72/7624

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• C23C16/4586

  Elements in the interior of the support, e.g. electrodes, heating or cooling devices · CPC title

• B23Q3/15

  Devices for holding work using magnetic or electric force acting directly on the work · CPC title