Trench junction field effect transistor having a mesa region

Patent metadata

Field	Value
Publication number	US-12550387-B2
Application number	US-202318106768-A
Country	US
Kind code	B2
Filing date	Feb 7, 2023
Priority date	Feb 11, 2022
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

A trench junction field effect transistor (trench JFET) includes a mesa region confined by first and second trenches along a first lateral direction. The first and second trenches extend into a semiconductor body from a first surface of the semiconductor body. A mesa channel region of a first conductivity type is confined, along the first lateral direction, by first and second gate regions of a second conductivity type. A first pn junction is defined by the mesa channel region and the first gate region. A second pn junction is defined by the mesa channel region and the second gate region. The mesa channel region includes, along the first lateral direction, first, second and third mesa channel sub-regions having a same extent along the first lateral direction.

First claim

What is claimed is:

1 . A trench junction field effect transistor (trench JFET), comprising:
a mesa region confined by first and second trenches along a first lateral direction, the first and second trenches extending into a semiconductor body from a first surface of the semiconductor body, wherein between the first and second trenches, the mesa region includes a mesa channel region of a first conductivity type and first and second gate regions of a second conductivity type, wherein the mesa channel region is confined, along the first lateral direction, by the first and second gate regions, wherein a first pn junction is defined by the mesa channel region and the first gate region, wherein a second pn junction is defined by the mesa channel region and the second gate region, wherein the mesa channel region includes, along the first lateral direction, first, second and third mesa channel sub-regions having a same extent along the first lateral direction, wherein a concentration of dopants of the first conductivity type averaged along the first lateral direction in the second mesa channel sub-region is larger than a concentration of dopants of the first conductivity type averaged along the first lateral direction in each of the first and third mesa channel sub-regions.

2 . The trench JFET of claim 1 , wherein an extent of the mesa region along the first lateral direction ranges 200 nm and 2 μm.

3 . The trench JFET of claim 1 , wherein along the first lateral direction, the concentration of dopants of the first conductivity type at a center of the second mesa channel sub-region is at least 2 times larger than at the first pn junction.

4 . The trench JFET of claim 1 , wherein along the first lateral direction, a first distance between the first pn junction and a nearest sidewall of the mesa region is smaller than twice a second distance between the first pn junction and a center of the second mesa channel sub-region.

5 . The trench JFET of claim 1 , wherein a profile of the concentration of dopants of the first conductivity type along the first lateral direction has one or more doping peaks, and wherein at least one of the one or more doping peaks has a distance, along the first lateral direction, to the center of the second mesa channel sub-region that is smaller than to a nearest one of the first and second pn junctions.

6 . The trench JFET of claim 5 , wherein all of the one or more doping peaks have a smaller distance, along the first lateral direction, to the center of the second mesa channel sub-region than to a nearest one of the first and second pn junctions.

7 . The trench JFET of claim 1 , wherein the profile of concentration of dopants of the first conductivity type along the first lateral direction is mirror-symmetrical to a center of the mesa channel region.

8 . The trench JFET of claim 1 , wherein the profile of the concentration of dopants of the first conductivity type along the first lateral direction has two doping peaks, a half peak width being a distance along the first lateral direction from where a concentration of dopants of the first conductivity type at each of the two doping peaks decreases towards a nearest one of the first and second pn junctions by a factor of 1/e, e being Euler's number, and wherein a distance between the two doping peaks along the first lateral direction ranges between 50% to 400% of the half peak width.

9 . The trench JFET of claim 1 , wherein a center of the mesa region corresponds to a center of the second mesa channel sub-region.

10 . The trench JFET of claim 1 , wherein the second mesa channel sub-region is interposed between the first and third mesa channel sub-regions along the first lateral direction.

11 . The trench JFET of claim 1 , wherein a vertical centerline of the mesa region is perpendicular to the first lateral direction and runs through the second mesa channel sub-region.

12 . A method for manufacturing a trench junction field effect transistor (trench JFET), the method comprising:
forming a mesa region confined by first and second trenches along a first lateral direction, the first and second trenches extending into a semiconductor body from a first surface of the semiconductor body, wherein forming the mesa region comprises forming, between the first and second trenches, a mesa channel region of a first conductivity type and first and second gate regions of a second conductivity type, wherein the mesa channel region is confined, along the first lateral direction, by the first and second gate regions, wherein a first pn junction is defined by the mesa channel region and the first gate region, wherein a second pn junction is defined by the mesa channel region and the second gate region, wherein the mesa channel region includes, along the first lateral direction, first, second and third mesa channel sub-regions having a same extent along the first lateral direction, wherein a concentration of dopants of the first conductivity type averaged along the first lateral direction in the second mesa channel sub-region is larger than a concentration of dopants of the first conductivity type averaged along the first lateral direction in each of the first and third mesa channel sub-regions.

13 . The method of claim 12 , wherein forming the mesa channel region includes at least one tilted ion implantation process of dopants of the first conductivity type, and wherein an ion implantation tilt angle ranges between 5° and 35°.

14 . The method of claim 12 , wherein forming the mesa channel region includes at least one ion implantation process of dopants of the first conductivity type, and wherein an ion implantation energy ranges between 300 KeV and 2 MeV.

15 . The method of claim 12 , wherein forming the first and second gate regions includes at least one ion implantation process of dopants of the second conductivity type, and wherein an ion implantation energy ranges between 10 KeV and 500 KeV.

16 . The method of claim 12 , wherein forming the mesa channel region includes at least one ion implantation process of dopants of the first conductivity type configured for a penetration depth of the dopants of the first conductivity type along the first lateral direction that is larger than half of an extent of the mesa region along the first lateral direction.

17 . The method of claim 12 , wherein a center of the mesa region corresponds to a center of the second mesa channel sub-region.

18 . The method of claim 12 , wherein the second mesa channel sub-region is interposed between the first and third mesa channel sub-regions along the first lateral direction.

19 . The method of claim 12 , wherein a vertical centerline of the mesa region is perpendicular to the first lateral direction and runs through the second mesa channel sub-region.

Assignees

• Infineon Technologies Austria Ag

Inventors

• Weber Hans
• Kammerlander David
• Riegler Andreas

Classifications

• H10P30/21

  of electrically active species · CPC title

• H10P30/222

  characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221) · CPC title

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D62/328

  having PN junction gates · CPC title