Transversely-excited film bulk acoustic resonator with thick dielectric layer for improved coupling

Patent metadata

Field	Value
Publication number	US-12549151-B2
Application number	US-202318194256-A
Country	US
Kind code	B2
Filing date	Mar 31, 2023
Priority date	Apr 12, 2022
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

A bulk acoustic resonator that includes a substrate, a piezoelectric plate, and an interdigital transducer (IDT) formed on the front surface of the piezoelectric plate. The IDT is configured to excite a primary shear acoustic mode within the piezoelectric plate. Also included is a half-lambda dielectric layer on at least one of the front surface or the back surface of the piezoelectric plate, where a thickness of the half-lambda dielectric layer is related to a wavelength of a fundamental shear bulk acoustic wave resonance in the half-lambda dielectric layer. The device further includes an acoustic Bragg reflector sandwiched between the surface of the substrate and the back surface of the piezoelectric plate, the acoustic Bragg reflector configured to reflect the primary acoustic mode. A top layer of the alternating layers of the acoustic Bragg reflector contacts the piezoelectric plate or the half-lambda dielectric layer.

First claim

What is claimed:

1 . A bulk acoustic resonator comprising:
a substrate having a surface; a piezoelectric plate having front and back surfaces; an interdigital transducer (IDT) at the front surface of the piezoelectric plate, wherein the IDT is configured to excite a primary shear acoustic mode within the piezoelectric plate; a half-lambda dielectric layer on at least one of the front surface or the back surface of the piezoelectric plate, wherein a thickness td of the half-lambda dielectric layer is defined as 0.85λ 0,d ≤2td≤1.15λ 0,d , where λ 0,d is a wavelength of a fundamental shear bulk acoustic wave resonance in the half-lambda dielectric layer, wherein the thickness td of the half-lambda dielectric layer is in a direction normal to the surface of the substrate; and an acoustic Bragg reflector sandwiched between the substrate and at least one of the half-lambda dielectric layer and the back surface of the piezoelectric plate, the acoustic Bragg reflector configured to reflect the primary shear acoustic mode, wherein the acoustic Bragg reflector comprises alternating layers of a first material and a second material having a higher acoustic impedance than the first material, and wherein a top layer of the alternating layers of the acoustic Bragg reflector contacts at least one of the half-lambda dielectric layer and the back surface of the piezoelectric plate.

2 . The bulk acoustic resonator of claim 1 , wherein the piezoelectric plate is lithium niobate and the first material is SiO 2 .

3 . The bulk acoustic resonator of claim 1 , wherein a thickness ts of the piezoelectric plate is defined as 2ts≈λ 0,s , where λ 0,s is a wavelength of a fundamental shear bulk acoustic wave resonance in the piezoelectric plate, wherein the thickness ts is measured in the direction normal to the surface of the substrate.

4 . The bulk acoustic resonator of claim 1 , wherein the alternating layers of the second material comprise one or more layers of silicon nitride, aluminum nitride, silicon carbide, molybdenum, tungsten, gold, or platinum.

5 . The bulk acoustic resonator of claim 1 , wherein each of the alternating layers of the Bragg reflector has a thickness in a range of 75% to 125% of an acoustic wavelength corresponding to a resonance frequency of the bulk acoustic resonator, wherein the thickness of the alternating layers of the Bragg reflector is measured in the direction normal to the surface of the substrate.

6 . The bulk acoustic resonator of claim 1 , wherein the half-lambda dielectric layer is one or more of SiO 2 , Si 3 N 4 , Al 2 O 3 , and AlN.

7 . The bulk acoustic resonator of claim 1 , further comprising the half-lambda dielectric layer at the front surface of the piezoelectric plate, such that the half-lambda dielectric layer at least partially covers the IDT at the front surface of the piezoelectric plate.

8 . A gravimetric mass sensor comprising:
the bulk acoustic resonator according to claim 7 , wherein the gravimetric mass sensor is configured to produce a signal based on a change in mass of the gravimetric mass sensor device in a liquid sensing environment.

9 . The gravimetric mass sensor of claim 8 ,
wherein the gravimetric mass sensor is configured to produce a signal based on a change in mass of the mass sensor device in a gas sensing environment.

10 . The bulk acoustic resonator of claim 1 , further comprising the half-lambda dielectric layer at the back surface of the piezoelectric plate, such that the half-lambda dielectric layer contacts a top layer of the second material in the Bragg reflector.

11 . A mass sensor device comprising:
a substrate having a surface; a piezoelectric plate having front and back surfaces; an interdigital transducer (IDT) at the front surface of the piezoelectric plate; a first half-lambda dielectric layer at the front surface of the piezoelectric plate, such that the first half-lambda dielectric layer at least partially covers the IDT at the front surface of the piezoelectric plate; a second half-lambda dielectric layer at the back surface of the piezoelectric plate; and an acoustic Bragg reflector sandwiched between the surface of the substrate and the back surface of the piezoelectric plate, the acoustic Bragg reflector configured to reflect a primary acoustic mode, wherein a thickness td of each of the first and second half-lambda dielectric layers is defined as 0.85λ 0,d ≤2td≤1.15λ 0,d , where λ 0,d is a wavelength of a fundamental shear bulk acoustic wave resonance in the respective first and second half-lambda dielectric layers, wherein the thickness td of the first and second half-lambda dielectric layers is in a direction normal to the surface of the substrate, wherein the acoustic Bragg reflector comprises alternating layers of a first material and a second material having a higher acoustic impedance than the first material, and wherein a top layer of the second material of the alternating layers of the acoustic Bragg reflector contacts the second half-lambda dielectric layer.

12 . The mass sensor device of claim 11 , wherein the IDT is configured to excite a primary shear acoustic mode within the piezoelectric plate.

13 . The mass sensor device of claim 11 , wherein the piezoelectric plate is lithium niobate and the first material is SiO 2 .

14 . The mass sensor device of claim 11 , wherein a thickness ts of the piezoelectric plate is defined as 2ts≈λ 0,s , where λ 0,s is a wavelength of the fundamental shear bulk acoustic wave resonance in the piezoelectric plate, wherein the thickness ts is measured in the direction normal to the surface of the substrate.

15 . The mass sensor device of claim 11 , wherein the alternating layers of the second material comprise one or more layers of silicon nitride, aluminum nitride, silicon carbide, molybdenum, tungsten, gold, or platinum.

16 . The mass sensor device of claim 11 , wherein each of the alternating layers of the Bragg reflector has a thickness in a range of 75% to 125% of an acoustic wavelength corresponding to a resonance frequency of the mass sensor device, wherein the thickness of each of the alternating layers of the Bragg reflector is measured in the direction normal to the surface of the substrate.

17 . The mass sensor device of claim 11 , wherein each of the first and second half-lambda dielectric layers is one or more of SiO 2 , Si 3 N 4 , Al 2 O 3 , and AlN.

18 . A gravimetric mass sensor comprising:
the mass sensor device according to claim 11 , wherein the gravimetric mass sensor is configured to produce a signal based on a change in mass of the mass sensor device in a liquid sensing environment.

19 . A bulk acoustic resonator comprising:
a substrate having a surface; a piezoelectric plate having front and back surfaces; an interdigital transducer (IDT) at the front surface of the piezoelectric plate; a half-lambda dielectric layer on the back surface of the piezoelectric plate; and an acoustic Bragg reflector sandwiched between the surface of the substrate and the back surface of the piezoelectric plate, the acoustic Bragg reflector configured to reflect a primary acoustic mode, wherein the acoustic Bragg reflector comprises alternating layers of a first material and a second material having a higher acoustic impedance than the first material, wherein a top layer of the alternating layers of the acoustic Bragg reflector contacts the half-lambda dielectric layer, wherein the IDT is configured to excite a primary shear acoustic mode within the piezoelectri

Assignees

• Murata Manufacturing Co

Inventors

• Yantchev Ventsislav
• Mchugh Sean
• Garcia Bryant
• Turner Patrick
• Koulakis John P

Classifications

• G01N29/022

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  Adsorption, desorption, surface mass change, e.g. on biosensors · CPC title

• G01N29/036

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• G01N2291/0426

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• H03H9/174

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